Dynamics in dye-doped LC systems in presence of trans-cis isomerism

The excitation as well as relaxation dynamics of dye-doped nematic liquid crystal cells has been explored both experimentally and theoretically. Overshoots in the build up of the probe signal diffracted from gratings written onto dye-doped liquid crystal systems have often been observed. The overshoot behaviour makes the accurate measurement of nonlinear optical (NLO) response magnitude difficult and ambiguous. Moreover, it complicates the understanding of the dynamics and the physics of the NLO processes. On the basis of the system with trans-cis isomerisation as a mechanism of the NLO effect the quantitative model has been built to describe the experimental results which we observe. The two unknown material parameters: diffusion coefficient and cis species lifetime are calculated from the relaxation data. A quantitative model of the signal build-up uses these parameters. The calculated dynamic behaviour based on this model correlates very well with the experimental data. The model is used to predict the performance of the system with various dopant diffusion properties.

淋巴细胞免疫治疗原发性习惯性流产

对49例确诊为原发性习惯性流产(41.76%)中的29例采用丈夫肘静脉血40ml分离淋巴细胞行主动免疫治疗(一般妊娠前治疗两次,妊娠后治疗两次),现有17例妊娠,其中11例已分娩;5例在中期妊娠;1例失败。妊娠成功率为94.12%(16/17)。另20例未经主动免疫治疗作为对照组,妊娠成功率为27.78%(5/18),两组相比差异有显著性(P<0.05),对部分病例进行了治疗前免疫状态检测,包括微淋巴细胞毒抗体阴性,杀伤淋巴细胞低下改变的检测。结果提示丈夫淋巴细胞主动免疫法的有效性及可提高患者免疫反应性,有较可靠的临床效果及应用价值。

微藻对变重力的生物学响应

综述了研究微重力的方法学和变重力对微藻生物学效应的研究及进展,并对未来的研究作了展望。

Investigation on multiple-port microcylinder lasers based on coupled modes

Microcylinder resonators with multiple ports connected to waveguides are investigated by 2D finite-difference time-domain (FDTD) simulation for realizing microlasers with multiple outputs. For a 10 mu m radius microcylinder with a refractive index of 3.2 and three 2 mu m wide waveguides, confined mode at the wavelength of 1542.3 nm can have a mode Q factor of 6.7 x 10(4) and an output coupling efficiency of 0.76. AlGaInAs/InP microcylinder lasers with a radius of 10 mu m and a 2 mu m wide output waveguide are fabricated by planar processing techniques. Continuous-wave electrically injected operation is realized with a threshold current of 4 mA at room temperature, and the jumps of output power are observed accompanying a lasing mode transformation.

Design and fabrication of polarization-independent micro-ring resonators

Origin of polarization sensitivity of photonic wire waveguides (PWWs) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25 nm and 1558.90 nm, and the quasi-TM mode is resonant at 1542.12 nm and 1558.94 nm. The corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. Thus the fabricated device is polarization independent. The extinction ratio is larger than 10 dB. The 3 dB bandwidth is about 2.5 nm and the Qvalue is about 620 at 1558.90 nm.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.

Storage of photoexcited electron-hole pairs in an AlAs/GaAs heterostructure created by electron transfer in real and kappa spaces

The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transferring electrons in both real and k spaces through resonant Gamma - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.

A double wavelength DFB laser with an identical active area for CWDM

A novel distribute feedback (DFB) laser which gave two different wavelengths under two distinct work conditions was fabricated. The laser consists of two Bragg gratings with different periods corresponding to wavelength spacing of 20 nm in an identical active area. When driving current was injected into one of the different sections separately, two different wavelengths at 1542.4 and 1562.5 nm were realized. The side mode suppression ratio (SMSR) of 45 dB or more both for the two Bragg wavelengths were achieved. The fabricating process of the laser was just the same as that of traditional DFB laser diode. This device can be potentially used in coarse wavelength division multiplexer (CWDM) as a promising light source and the technology idea can be used to enlarge the transmission capacity in metro area network (MAN).

高氢稀释制备微晶硅薄膜微结构的研究

采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜。其结构特征用Raman谱，红外透射谱，小角X射线散射等来表征。结果表明微晶硅的大小及在薄膜中的晶态比χ_c随氢稀释度的提高而增加。而从红外谱计算得到氢含量则随氢稀释度的增加而减少。小角X射线散射结果表明薄膜致密度随氢稀释度的增加而增加。结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的键合状态。认为随着晶化的发生和晶化程度的提高逐渐移向晶粒表面，在硅薄膜中H的存在形式从以SiH为主向SiH_2转变，即在微晶硅膜中主要以SiH_2形式存在于晶粒的界面。