Simulação de escoamentos incompressíveis empregando o método Smoothed Particle Hydrodynamics utilizando algoritmos iterativos na determinação do campo de pressões

Nesse trabalho, foi desenvolvido um simulador numérico (C/C++) para a resolução de escoamentos de fluidos newtonianos incompressíveis, baseado no método de partículas Lagrangiano, livre de malhas, Smoothed Particle Hydrodynamics (SPH). Tradicionalmente, duas estratégias são utilizadas na determinação do campo de pressões de forma a garantir-se a condição de incompressibilidade do fluido. A primeira delas é a formulação chamada Weak Compressible Smoothed Particle Hydrodynamics (WCSPH), onde uma equação de estado para um fluido quase-incompressível é utilizada na determinação do campo de pressões. A segunda, emprega o Método da Projeção e o campo de pressões é obtido mediante a resolução de uma equação de Poisson. No estudo aqui desenvolvido, propõe-se três métodos iterativos, baseados noMétodo da Projeção, para o cálculo do campo de pressões, Incompressible Smoothed Particle Hydrodynamics (ISPH). A fim de validar os métodos iterativos e o código computacional, foram simulados dois problemas unidimensionais: os escoamentos de Couette entre duas placas planas paralelas infinitas e de Poiseuille em um duto infinito e foram usadas condições de contorno do tipo periódicas e partículas fantasmas. Um problema bidimensional, o escoamento no interior de uma cavidade com a parede superior posta em movimento, também foi considerado. Na resolução deste problema foi utilizado o reposicionamento periódico de partículas e partículas fantasmas.

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

gamma-LiAlO2 single crystal grown by Czochralski technique and modified by vapor transport equilibration (VTE) technique

Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.

Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of gamma-LiAlO2

gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

Fabrication of beta-BaB2O4 layers on (001) Sr2+-doped alpha-BaB2O4 by vapor transport equilibration (VTE)

Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

Simulação numérica do processo de alteamento de áreas de deposição de resíduos pelo método a montante.

A previsão do comportamento de resíduos constituiu-se em um desafio geotécnico, uma vez que estes materiais apresentam uma resposta distinta dos materiais usualmente encontrados em depósitos naturais. A análise dos recalques da fundação, decorrentes da sobrecarga imposta pelo alteamento, é complexa, tendo em vista que o adensamento de resíduos pressupõe grandes deformações, invalidando o uso de teorias clássicas de adensamento. Atualmente, no Brasil, a técnica de disposição de resíduos de bauxita prevê uma operação inicial de lançamento no interior de lagos artificiais, em forma de polpa. Após o esgotamento do lago e ressecamento do resíduo, inicia-se o lançamento pelo método a montante. Neste método, a polpa é lançada sobre o resíduo pré-existente, que se encontra em processo de adensamento. O presente trabalho tem como objetivo reproduzir numericamente o comportamento de áreas de resíduos durante a etapa de alteamento a montante. A pesquisa tem como enfoque 2 áreas de resíduos de bauxita. Uma delas encontra-se em fase de reabilitação e dispõe de instrumentação de campo (recalques e deslocamentos horizontais). A outra se encontra em fase de operação do alteamento e dispõe de dados experimentais. Desta forma, a metodologia consistiu na reprodução numérica do processo de alteamento da área instrumentada e comparação dos resultados com a instrumentação de campo, com objetivo de avaliar o modelo numérico e os parâmetros do resíduo. Posteriormente, realizou-se a previsão do comportamento do resíduo de fundação da área em fase de alteamento. Os parâmetros geotécnicos foram definidos a partir de um extenso programa de ensaios de campo e laboratório, executado no local em estudo, fazendo-se uso de um tratamento estatístico dos dados experimentais. Os resultados numéricos mostraram a potencialidade do programa na previsão do comportamento de áreas de resíduos durante o alteamento a montante, com previsões de recalques e deslocamentos horizontais coerentes com a instrumentação de campo.