800V lateral IGBT in bulk Si for low power compact SMPS applications

An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in front of the P+ anode/drain region. The floating N+ layer enhances the carrier recombination at the anode/drain side of the drift region resulting in a very significant decrease in the turn-off speed and substantially lower overall losses. Switching speeds as low as 140ns at 25oC and 300ns at 125oC have been achieved with corresponding equivalent Rdson at 125oC below 90mω.cm2. A fully operational AC-DC converter using a controller with an integrated LIGBT+depletion mode MOSFET chip has been designed and qualified in plastic SOP8 packages and used in 5W, 65kHz SMPS applications. The device is fabricated in 0.6μm bulk silicon CMOS technology without any additional masking steps. © 2013 IEEE.

Design and performance analysis of a 6 MW medium-speed Brushless DFIG

The paper presents the design and performance analysis of a 6 MW medium-speed Brushless Doubly-Fed Induction Generation (Brushless DFIG) for a wind turbine drivetrain. Two machines with different frame sizes have been designed to show the flexibility of the design procedure. The mediumspeed Brushless DFIG in combination with a two stage gearbox offers a low-cost, low-maintenance and reliable drivetrain for wind turbine applications.

Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.

Low voltage ride-through of DFIG and brushless DFIG: Similarities and differences

The brushless doubly fed induction generator (BDFIG) has been proposed as a viable alternative in wind turbines to the commonly used doubly fed induction generator (DFIG). The BDFIG retains the benefits of the DFIG, i.e. variable speed operation with a partially rated converter, but without the use of brush gear and slip rings, thereby conferring enhanced reliability. As low voltage ride-through (LVRT) performance of the DFIG-based wind turbine is well understood, this paper aims to analyze LVRT behavior of the BDFIG-based wind turbine in a similar way. In order to achieve this goal, the equivalence between their two-axis model parameters is investigated. The variation of flux linkages, back-EMFs and currents of both types of generator are elaborated during three phase voltage dips. Moreover, the structural differences between the two generators, which lead to different equivalent parameters and hence different LVRT capabilities, are investigated. The analytical results are verified via time-domain simulations for medium size wind turbine generators as well as experimental results of a voltage dip on a prototype 250 kVA BDFIG. © 2014 Elsevier B.V.

Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching

A 2 x 2 thermo-optic (TO) Mach-Zehnder (MZ) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. The multi-mode interferometers (MMI) were used as power splitter and combiner in MZ structure. In order to get smooth interface, anisotropy chemical wet-etching of silicon was used to fabricate the waveguides instead of dry-etching. Additional grooves were introduced to reduce power consumption. The device has a low switching power of 235 mW and a switching speed of 60 mus. (C) 2004 Elsevier B.V. All rights reserved.

A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30 mu m). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.

Characterization of parasitics in TO-packaged high-speed laser modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission

Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.

A high-gain high-linearity wide-band low noise amplifier for terrestrial and cable receptions

This paper presents the design of a wide-band low-noise amplifier (LNA) implemented in a 0.35 mu m SiGe BiCMOS technology for cable (DVB-C) and terrestrial (DVB-T) tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure(NF) of the wideband LNA is 5dB, its 1-dB compression point is -2dBm and IIP3 is 8dBm. The LNA dissipates 120mW power with a 5-V supply.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

An analysis of the performance of a new high-speed single-way analog switch

This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

Modeling study to compare the flow and heat transfer characteristics of low-power hydrogen, nitrogen and argon arc-heated thrusters

A modelling study is performed to compare the plasma °ow and heat transfer char- acteristics of low-power arc-heated thrusters (arcjets) for three di®erent propellants: hydrogen, nitrogen and argon. The all-speed SIMPLE algorithm is employed to solve the governing equa- tions, which take into account the e®ects of compressibility, Lorentz force and Joule heating, as well as the temperature- and pressure-dependence of the gas properties. The temperature, veloc- ity and Mach number distributions calculated within the thruster nozzle obtained with di®erent propellant gases are compared for the same thruster structure, dimensions, inlet-gas stagnant pressure and arc currents. The temperature distributions in the solid region of the anode-nozzle wall are also given. It is found that the °ow and energy conversion processes in the thruster nozzle show many similar features for all three propellants. For example, the propellant is heated mainly in the near-cathode and constrictor region, with the highest plasma temperature appear- ing near the cathode tip; the °ow transition from the subsonic to supersonic regime occurs within the constrictor region; the highest axial velocity appears inside the nozzle; and most of the input propellant °ows towards the thruster exit through the cooler gas region near the anode-nozzle wall. However, since the properties of hydrogen, nitrogen and argon, especially their molecular weights, speci¯c enthalpies and thermal conductivities, are di®erent, there are appreciable di®er- ences in arcjet performance. For example, compared to the other two propellants, the hydrogen arcjet thruster shows a higher plasma temperature in the arc region, and higher axial velocity but lower temperature at the thruster exit. Correspondingly, the hydrogen arcjet thruster has the highest speci¯c impulse and arc voltage for the same inlet stagnant pressure and arc current. The predictions of the modelling are compared favourably with available experimental results.