MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission
Data(s) |
2006
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Resumo |
Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhao Q; Pan JQ; Zhang J; Li BX; Zhou F; Wang BJ; Wang LF; Zhao LJ; Zhou GT; Wang W .MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(6):734-739 |
Palavras-Chave | #光电子学 #VAPOR-PHASE EPITAXY #MONOLITHIC INTEGRATION #SELECTIVE GROWTH #LAYERS #DIODE #MOVPE |
Tipo |
期刊论文 |