MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission


Autoria(s): Zhao Q; Pan JQ; Zhang J; Li BX; Zhou F; Wang BJ; Wang LF; Zhao LJ; Zhou GT; Wang W
Data(s)

2006

Resumo

Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.

Identificador

http://ir.semi.ac.cn/handle/172111/10574

http://www.irgrid.ac.cn/handle/1471x/64483

Idioma(s)

英语

Fonte

Zhao Q; Pan JQ; Zhang J; Li BX; Zhou F; Wang BJ; Wang LF; Zhao LJ; Zhou GT; Wang W .MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(6):734-739

Palavras-Chave #光电子学 #VAPOR-PHASE EPITAXY #MONOLITHIC INTEGRATION #SELECTIVE GROWTH #LAYERS #DIODE #MOVPE
Tipo

期刊论文