In situ characterization of alloy catalysts for low-temperature graphene growth.

Low-temperature (∼450 °C), scalable chemical vapor deposition of predominantly monolayer (74%) graphene films with an average D/G peak ratio of 0.24 and domain sizes in excess of 220 μm(2) is demonstrated via the design of alloy catalysts. The admixture of Au to polycrystalline Ni allows a controlled decrease in graphene nucleation density, highlighting the role of step edges. In situ, time-, and depth-resolved X-ray photoelectron spectroscopy and X-ray diffraction reveal the role of subsurface C species and allow a coherent model for graphene formation to be devised.

Preservation of Otolithus argenteus at low temperature

The studies provided data on the spoilage pattern of Otolithus argenteus during low temperature preservation. Changes in the total volatile bases, hypoxanthine, tyrosine, salt soluble nitrogen, non-protein nitrogen, pH, peroxide value, free fatty acids and thiobarbituric acid number along with organoleptic score have been reported. Organoleptically, fish stored at +20 degree C remained in acceptable condition upto 12 days while for those stored at 0 degree C in ice upto 19 days. Of the various indices tested Hypoxanthine, salt soluble nitrogen and total volatile bases nitrogen, in the order of merit can be used as freshness tests for refrigerated fish.

Incidence and low temperature survival of coagulase positive staphylococci in fishery products

Coagulase-positive staphylococci was found to be absent in all the frozen samples of lobsters, cuttle fish, cat fish, seer fish and red snapper examined. Coagulase-positive staphylococci were present in 38% of the cooked frozen shrimps and only 16% of the samples had staphylococci count more than 100/g. In the case of headless, peeled and deveined, peeled undeveined shrimps, the incidence of the organism was 6, 12 and 16% respectively. The study indicated that the incidence of coagulase-positive staphylococci is not a serious problem in frozen fishery products processed in this country. There was remarkable difference in the rate of destruction of coagulase-positive staphylococci in raw and cooked shrimps during freezing and frozen storage.

Incidence and low temperature survival of Salmonella in fishery products

Salmonella was isolated from 12% of PD shrimps, 10% of HL shrimps, 14% of PUD shrimps, 17% of lobsters, 14% of cuttle fish, 25% of cat fish and 20% of seer fish (all frozen) tested. One percent of the fish meal, 4% of dried non-penaeid prawn and 23% of sea beach sand showed incidence of the organism. Salmonella was also isolated from 2 and 4% of the swab samples of utensil surfaces and the floor surface of the processing hall respectively as well as from 1% of the process water tested. All the serotypes of Salmonella tested were resistant to freezing at -40°C, but during subsequent storage at -20°C, there was some difference between the serotypes with regard to their viability, S. paratyphi B being the most resistant which survived up to 9 months while S. saintpaul the least resistant having survival up to 5 months only.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Patterned low temperature copper-rich deposits using inkjet printing

Discrete inkspots of very high copper content were produced using inkjet technology. The reagent disproportionates at low temperature to deposit copper on glass. These deposits were shown to be more than 90% copper by weight by electron probe microanalysis and microbeam Rutherford backscatttering spectroscopy.

A microbeam RBS analysis of low temperature direct-write inkjet deposited copper

Quantitative microbeam Rutherford backscattering (RBS) analysis with a 1.5 MeV 4He+ beam has determined limits on the purity of copper deposited on glass with a novel inkjet process. A tetravinyl silane tetrakisCu(I) 1,1,1,5,5,5-hexafluoroacetylacetonate (TVST[Cu]hfac) complex was heated to 70 °C and jetted onto the glass substrate through a piezoelectric ceramic print head in droplets about 0.5 mm diameter. The substrate temperature was 150 °C. Solid well-formed deposits resulted which have a copper content greater than about 90% by weight. The RBS spectra were analysed objectively using the DataFurnace code, with the assumption that the deposit was CuOx, and the validity of different assumed values of x being tested. The assumptions and the errors of the analysis are critically evaluated. © 2002 Elsevier Science B.V. All rights reserved.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.