A versatile color tuning strategy for iridium(III) and platinum(II) electrophosphors by shifting the charge-transfer states with an electron-deficient core

By fusing an electron-deficient ring system with the phenyl ring of a 2-phenylpyridine (ppy)-type ligand, a new and synthetically versatile strategy for the phosphorescence color tuning of cyclometalated iridium(III) and platinum(II) metallophosphors has been established. Two robust red electrophosphors with enhanced electron-injection/electron-transporting features were prepared by using an electron-trapping fluoren-9-one chromophore in the ligand design. The thermal, photophysical, redox and electrophosphorescent properties of these complexes are reported. These exciting results can be attributed to a switch of the metal-to-ligand charge-transfer (MLCT) character of the transition from the pyridyl groups in the traditional Ir-III or Pt-II ppy-type complexes to the electron-deficient ring core, and the spectral assignments corroborate well with the electrochemical data as well as the timedependent density functional theory (TD-DFT) calculations. The electron-withdrawing character of the fused ring results in much more stable MLCT states, inducing a substantial red-shift of the triplet emission energy from yellow to red for the Ir-III complex and even green to red for the PtII counterpart.

Enhanced amplified spontaneous emission using layer-by-layer assembled cowpea mosaic virus

Layer-by-layer assembly technique was used to construct ultrathin film of cowpea mosaic virus (CPMV) by electrostatic interactions, and the film was employed as a precursor on which an OF8T2 film was deposited by spin coating. Amplified spontaneous emission (ASE) was observed and improved for the OF8T2 film. Compared with OF8T2 film on quartz, the introduction of CPMV nanoparticles reduced the threshold and loss, and remarkably increased the net gain. The threshold, loss, and gain reached 0.05 mJ/ pulse, 6.9 cm(-1), and 82 cm(-1), respectively. CPMV nanoparticles may enormously scatter light, resulting in a positive feedback, thus the ASE is easily obtained and improved.

Nonvolatile memory devices based on gold nanoparticle and poly (N-Vinylcarbazole) composite

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behavior of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nanovolatile polymer memory devices.

Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material

Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.

Negative differential resistance effect in organic devices based on an anthracene derivative

The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-bis-(9,9-diphenyl-9H-fluoren-2-yl)-anthracene (DPFA) sandwiched between Ag and indium tin oxide electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (on state) and a low conductance state (off state). It can be found that the currents at both on to off states are space-charge limited and attributed to the electron traps at the Ag/DPFA interface. The large and reproducible NDR makes the devices of tremendous potential in low power memory and logic circuits.

White organic light-emitting devices with a phosphorescent multiple emissive layer

A phosphorescent multiple emissive layer, in which a blue emissive layer is sandwiched between red and green ones, is employed in a white organic light-emitting device (OLED). This OLED has a maximum luminance of 48 000 cd/m(2) at 17 V, a maximum power efficiency of 9.9 lm/W at 4 V, and a color rendering index of 82. In addition, the emission color of this device is fairly stable at high luminances: its Commission Internationale de l(')Eclairage coordinate slightly changes from (0.431, 0.436) to (0.400, 0.430) when the luminance ranges from 2000 to 40 000 cd/m(2).

Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.

Negative differential resistance and multilevel memory effects in organic devices

Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.

Preparation of the HIPS/MA graft copolymer and its compatibilization in PA6/HIPS blends

The graft copolymer of high impact polystyrene (HIPS) grafted with malice anhydride (MA) (HIPS-g-MA) was prepared with melt mixing in the presence of a free-radical initiator. The grafting reaction was confirmed by IR analyses and the amount of MA grafted on HIPS was evaluated by a titration method. 1-5 wt% of MA can be grafted on HIPS. HIPS-g-MA is miscible with HIPS. Its anhydride group can react with the PA6 during melt mixing the two components. The compatibility of HIPS-g-MA in the HIPS/PA6 blends was evident. Evidence of reactions in the blends was confirmed in the morphology and mechanical properties of the blends. A significant reduction in domain size was observed because of the compatibilization of HIPS-g-MA in the blends of HIPS and PA6. The tensile mechanical properties of the prepared blends were investigated and the fracture surfaces of the blends were examined by means of the scanning electron microscope (SEM). The improved adhesion in a 16%HIPS/75%PA6 blend with 9%HIPS-g-MA copolymer was detected. The morphology of fibrillar ligaments formed by PA6 connecting HIPS particles was observed.

HIPS-g-MA共聚物对HIPS/PC共混物相容性、形态和拉伸性能的影响

研究了 HIPS/ PC共混物的相容性及 HIPS- MA对 HIPS( 30 ) / PC( 70 )共混物的相容性、形态和拉伸性能的影响。DSC研究结果表明 ,HIPS/ PC共混物中 PS的玻璃化转变温度 ( Tg)不随组成而变化 ,而PC的 Tg 随其质量分数的降低逐渐向低温移动 ,说明 HIPS/ PC是部分相容体系。通过 DSC、扫描电镜形态观察和拉伸性能测试结果发现 ,当 HIPS- g- MA的含量低于 7.5 %时 ,共混物的相容性改善不明显 ,当其含量达到 7.5 %时 ,对共混物有明显的乳化作用 ,说明饱和的界面浓度在 7.5 %左右。HIPS- g- MA接枝共聚物在 HIPS( 30 ) / PC( 70 )共混物中的增容作用可能是酯交换反应原位生成的嵌段共聚物所致

Europium ion labeling anti-HBs

A microsecond time-resolved laser fluorescence spectroscopic analysis set was developed, A chelate-cyclic anhydride of diethylenetrimin pentaacetic acid anhydride (DTPAA) was synthesized. An anti-HBs antibody was purified, A EU3+ -DTPAA-anti-HBs label was prepared by two step procedure. We described the optimal condtion with EU3+ as marker and DTPAA as chelate bounding to antibody molecule. Labeling parameters such as solvent pH, protein and chelate molar ratio, reaction time, separation method were discussed in detail.

Two new coordination polymers of Co(II) with 1,1 '-(1,4-butanediyl)bis(benzimidazole)

Two new compounds, [CoL2(H2O)(2)](NO3)(2). 8H(2)O (1) and [CoL(H2O)(2)(CH3CO2)(2)]. H2O (2), were obtained from self-assembly of the corresponding metal salts with 1,1'-(1,4-butanediyl)bis(benzimidazole) (L). In 1, each cobalt ion is coordinated to four nitrogen atoms from four molecules of L, and to two water molecules. Metal ions are bridged by L ligands to form infinite (4, 4) networks that contain 44-membered rings. The (4, 4) networks of 1 stack in a parallel fashion, resulting in the formation of large channels in the material. In 2, each cobalt ion is coordinated to two N atoms from two L molecules, two water molecules and two carboxylate O atoms from two acetate anions. Each L molecule is coordinated to two cobalt ions, acting as a bridging ligand as in 1. The bridged cobalt ions form an infinite zigzag chain structure.

Networks with hexagonal circuits in co-ordination polymers of metal ions (Zn-II, Cd-II) with 1,1 '-(1,4-butanediyl)bis(imidazole)

Three new compounds, [ZnL1.5(H2O)(SO4)]. 6H(2)O 1, [ZnL1.5(H2O)(2)][NO3](2). 2H(2)O 2 and [CdL1.5(H2O)(2)(SO4)]. 4H(2)O 3 were obtained from self-assembly of the corresponding metal salts with 1,1'-(1,4-butanediyl)bis(imidazole) (L). In both 1 and 2 zinc ion is five-co-ordinated, showing a less-common trigonal bipyramidal co-ordination polyhedron, while cadmium ion of 3 is six-co-ordinated with a common octahedral arrangement. The sulfate ions of 1 and 3 are co-ordinated, however the nitrate ions of 2 are not. Each of the three compounds is composed of a (6, 3) network with the hexagonal smallest circuit containing six metal ions and six L; each L is co-ordinated to two metal ions, acting as a bridging ligand. In 1 the 2-D sheet of (6, 3) networks is interpenetrated in an inclined mode by symmetry related, identical sheets to give an interlocked 3-D structure, while the (6, 3) networks of both 2 and 3 stack in a parallel fashion to construct frameworks having channels.