Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate

Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.

射频能量AC/DC电荷泵的MOS实现研究

在射频能量AC/DC的能源转换实现研究中提出一种采用低阈值MOS管构成的高效电荷泵.新方案消除了现有的肖特基二极管高效电荷泵制作工艺特殊、批次性能不够一致的缺陷.分析表明,通过有机调整MOS管宽长比、器件电容、充电级数等设计参量,可以方便地满足不同的性能要求,实现集成制作方便、性能稳定的高效射频能量AC/DC型电荷泵.

一个易于系统集成的变步长反馈数字DC-DC变换模块

提出了一种采用单比较器变步长反馈控制和占空比抖动方法的数字DC-DC变换模块。它用6位二进制分辨率占空比的PWM信号实现了7位的电压分辨率。变步长反馈控制的使用使得它具有比恒定步长方案更好的动态性能，而且没有过多增加控制器的复杂度。在1MHz的开关频率下，控制器自身功耗小于0.5mW（不含功率开关及驱动部分）。由于电路的模拟部分极少，因此易与数字系统进行单芯片集成。

一种无需ADC的变步长反馈DC-DC转换器数控方式

数控DC-DC变换器由于其自身的特点，易于与数字系统进行单片集成。DC-DC的数字控制算法有很多种，其中比较复杂的算法（如PID）需要在片内集成ADC，增加了设计难度。较为简单的控制方案只使用单一的比较器作为反馈输入部件，但动态性能较差。本文在已有的单比较器恒定步长反馈数控Buck转换器的基础上，提出了一类变步长反馈的方案。由于仍使用单比较器或窗口比较器，它的结构简单且易于集成。它借鉴了对分搜索的思路，能根据输出电压反馈的结果动态地改变占空比的变化步长，从而明显地提高了原有恒定步长反馈数控变换器的动态性能。

选择性质子轰击DC-PBH激光器

在普通双沟平面掩埋异质结(DC-PBH)激光器的基础上，采用质子轰击的技术，制作了一种新型的选择性质子轰击DC-PBH激光器。这种新型的激光器结构与以前普遍的DC-PBH结构相比阈值电流降低，傅出功率及量子效率得到提高，尤其是它的调制特性得到明显改善，这种结构激光器的调制带宽由原来的2.0GHz提高到6.0GHz。

Modulation magnesium-doping in AlGaN/GaN superlattices

Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

中国蔷薇属芹叶组（Rosa Sect. Pimpinellifoliae DC. ex Ser.）的分类学研究

本研究通过我国CDBI、 KUN、PE、SZ等主要标本馆约3, 500份馆藏标本的研究和野外考察相结合，对我国蔷薇属（Rosa L.）芹叶组(Sect. pimpinellifoliae DC. ex Ser.）植物以及相关组的一些种进行了性状特征、形态和微形态的研究，对该组的一些种的形态特征描述进行了补充，同时给出详细的地理和海拔范围分布图。综合花粉以及种子（瘦果）形态的研究结果重新制订了分种检索表，同时，对该组一些形态相近容易混淆的种进行了对比研究，特别对一直存在争议的绢毛复合体（绢毛蔷薇R. sericea Lindl.和峨眉蔷薇R. omeiensis Rolfe）进行了大量宏观形态特征的研究，并用光学显微镜（LM）和扫描电镜(SEM)对二者的花粉及种子形态、微形态进行对比研究和分析，主要研究内容包括： 1. 芹叶组孢粉研究 对芹叶组的10个种及相关的4个组共17个种（18个样品）的植物花粉进行了光镜和扫描电镜观察和比较研究。研究结果表明：蔷薇属植物花粉粒大小为中等偏小，极轴长23.98[21.82(R. graciliflora Rehd. et Wils.)～29.18(R. tsinglingensis Pax. et Hoffm.)] μm，赤道轴长28.65[24.15（R. graciliflora）～34.70(R. davidii Crép.)] μm；花粉属辐射对称等极单花粉，花粉形态赤道面观呈球形到超长球形；极面观为三裂圆形或近圆形,三孔沟，孔缘加厚,具中部突起的桥状盖。花粉外壁纹饰为条纹状，光镜下形态特征相差不大；在电镜下外壁条纹和脊沟内穿孔的形状、大小和频度等特征，常具组至种水平上的可见变异，可作为组至种水平划分的依据。 根据花粉外壁条纹特征及穿孔形状和数目等特征，本研究将这些植物的花粉归为5个类型，并编制了分组检索表。同时，根据条纹状的清晰度，排列方式、条纹形状、穿孔大小及其频度等方面的差异，各有特点，对该组的10个种编制了分种检索表。 2. 芹叶组种子形态研究 应用光学显微镜和扫描电镜对我国蔷薇属芹叶组14个种及相关组5个组共36种植物的种子宏观形态及种皮微形态特征进行了观察研究。结果显示，蔷薇属种子形态多样,形状分别为肾形、卵形或锥形等；种子颜色以淡棕色、褐色以及土黄色为主；种子大小种间相差悬殊，相对体积为（长×宽×厚）36.66（4.79～114.47) mm3。光镜下，种子宏观形态特征具组内一致性，在扫描电镜下种子表面结构特征因种而异，其纹饰以网纹为主，可分为3种类型，即近平滑型、负网纹型和网纹型。研究结果表明，蔷薇属种子表面纹饰与地理分布关系不大,具有组及种内稳定性。其种子形态、大小、表而纹饰类型等特征可作为蔷薇属组及种水平上的分类依据。 结合蔷薇属花粉形态研究结果，得出蔷薇属种皮微形态特征与花粉外壁纹饰特征相吻合，在代表组及种的特征上具相关性的结论。同时根据种子形态、微形态结构特征的组间区别和种间差异编制了分组及芹叶组14个种的分种检索表。 3. 绢毛蔷薇复合体的研究 通过对大量标本的研究、野外观察以及扫描电镜对绢毛蔷薇复合体的花粉形态和种皮表面结构进行研究，通过对小叶、花粉及种子的形态定量分析结果支持Rowley (1959)的观点，将峨眉蔷薇处理为绢毛蔷薇的一个变种。 综上研究结果得出，蔷薇属植物的小叶片数目、花被基数以及花粉及种子形态等性状是较为稳定的，这些特征可很好的作为分类学依据。 The morphology, pollen exine sculpture and seed coat structure of the species of Rosa sect. Pimpinellifoliae and related sections were studied.About 3,500 herbarium specimens at CDBI, KUN, PE, and SZ were examined. Field work in Sichuan and Yunnan were conducted. Revisions of some species were carried out and a new key to species of sect. Pimpinellifoliae was proposed based on morphology, pollen exine sculpture and seed coat structure, Detailed morphological descriptions, geographical distributions and the altitudinal ranges of some taxa are given. The systematics of the species complex, the Rosa sericea complex (R. sericea Lindl. & R. omeiensis Rolfe), was emphasized. This thesis focused on the following three aspects: 1. Pollen morphology of Rosa sect. Pimpinellifoliae The pollen morphology of 18 samples representing 10 species of the Eurasian Rosa sect. Pimpinellifoliae and 7 additional species of related sections was investigated under LM and SEM. The pollen grains are monadic, actinomorphic, equipolar, medium-sized, spheroidal to perprolate in equatorial view, 3-lobed circular or semi-circular in polar view, crassimarginate, pontoperculate, and with striate exine sculpture. The striate sculpture varies among sections and species. The equatorial axis ranges from 17.97 μm (R. sikangensis) to 29.18 μm (R. tsinglingensis) with an average of 23.98 μm in length, while polar axis varies from 24.15 μm (R. gracilifolra) to 34.70 μm (R. davidii) with an average of 28.65 μm in length. The pollens can be divided into five types based on striate sculpture and a key to the sections sampled was proposed accordingly. The pollen morphology of species of sect. Pimpinellifoliae is more homogeneous and different from other sections sampled and did not support the two-series subdivisions in sect. Pimpinellifoliae. A key is also provided based on characers of pollen morphology among species in sect. Pimpinellifoliae. 2. Seed coat structure of Rosa sect. Pimpinellifoliae The seed coat structure of 39 samples representing 14 species of Rosa sect. Pimpinellifoliae and 12 additional species of related sections was investigated under LE and SEM. The seed relative volume (Length × width × thickness) ranges from 4.79 to 114.47 mm3 with an average of 36.66. mm3. The seeds are reniform, ovate or oblong in shape, with orange-brown, light brown or deep brown color. Seed coat sculpture was reticulate or striate-like reticulate. There was no difference in sculpture character of various speices under LM, while three types of seed coat sculpture were identified under SEM and a key to species based on the seed coat sculpture was provided. The three types of seed coat sculpture were nearly smooth, areolate and reticulate. The study of the seed coat sculpture of same species sampled from different populations showed that characters on the seed coat are stable, and thus the size, shape and seed coat sculpture can be used in species level identification. Interestingly, characters in the seed coat sculpture and the pollen morphology in sect. Pimpinellifoliae are consistent at in specific or sectional levels. A key to the 14 species sampled was given based on seed coat sculpture. 3. The study on Rosa sericea complex The Rosa sericea complex contains R. omeiensis and R. sericea. They are morphologically similar to one another and the systematic status of R. omeiensis has been controversial. In this study we examined large numbers of herbarium specimens of R. omeiensis and R. sericea and conducted field observations in the Hengduan Mts.. We also performed SEM study of pollen morphology and seed coat structure of R. omeiensis and R. sericea. We further carried out intensive morphometric study on the leaflet, pollen, and seed morphology. Our results showed that R. omeiensis should be sunk to be a variety of R. sericea, just as Rowley’s treatment in 1959. In conclusion, the features in the number of leaflet and petal, and the morphological character on pollen and seed are relatively stable. Therefore these characters are very useful in taxon delimition.

多相同步DC-DC PWM控制器LTC1629

LTC1629是Linear公司专门为低压大电流的DC-DC变换电路设计的PWM控制电路,应用该公司的PolyPhaseTM~(TM)技术,有效地减少了输入输出纹波电流,同时提高了变换器的效率。本文介绍它的基本组成部分的功能和简单应用电路。