Dressed multi-wave mixing in a V-type four-level atomic system

The dressed four- and six-wave mixings in a V-type four-level system are considered. Under two different dressed conditions, two- and three-photon resonant Autler-Townes splittings, accompanied by enhancement and suppression of wave mixing signal, are obtained analytically. Meanwhile, an electromagnetic induced transparency of multi-wave mixing is presented, which shows multiple peaks and asymmetric effects caused by one-photon, two-photon and three-photon resonances, separately. The slow light propagation multiple region of multi-wave mixing signal is also obtained.

INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY

The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1-2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

A Compact Direct Digital Frequency Synthesizer for the Rubidium Atomic Frequency Standard

A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

Electron transfer in fast atomic collisions in the presence of an x-ray laser

We consider electron capture in fast collisions between a proton and hydrogen in the presence of an intense x-ray laser whose angular frequency omega is close to v(2)/2, where v is the collision velocity. We show that in such a case laser-induced capture becomes possible and that the latter proceeds via both induced photon emission and photon absorption channels and can, in principle, compete with kinematic and radiative electron capture.