Topological objects in two-gap superconductor

We discuss the non-Abelian topological objects, in particular the non-Abrikosov vortex and the magnetic knot made of the twisted non-Abrikosov vortex, in two-gap superconductor. We show that there are two types of non-Abrikosov vortex in Ginzburg-Landau theory of two-gap superconductor, the D-type which has no concentration of the condensate at the core and the N-type which has a non-trivial profile of the condensate at the core, under a wide class of realistic interaction potential. We prove that these non-Abrikosov vortices can have either integral or fractional magnetic flux, depending on the interaction potential. We show that they are described by the non-Abelian topology pi(2)(S-2) and pi(1)(S-1), in addition to the well-known Abelian topology pi(1)(S-1). Furthermore, we discuss the possibility to construct a stable magnetic knot in two-gap superconductor by twisting the non-Abrikosov vortex and connecting two periodic ends together, whose knot topology pi(3)(S-2) is described by the Chern-Simon index of the electromagnetic potential. We argue that similar topological objects may exist in multi-gap or multi-layer superconductors and multi-component Bose-Einstein condensates and superfluids, and discuss how these topological objects can be constructed in MgB2, Sr2RuO4, He-3, and liquid metallic hydrogen.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Topological solitons in the CPN model

We investigate the solitons in the CPN supercript stop model in terms of the decomposition of gauge potential. Based on the phi-mapping topological current theory, the charge and position of solitons is determined by the properties of the typical component. Furthermore, the motion and the bifurcation of multi-soliton is discussed. And the knotted solitons in high dimension is explored also.

Topological structure of vortex solution in Jackiw-Pi model

By using phi-mapping method, we discuss the topological structure of the self-duality solution in Jackiw-Pi model in terms of gauge potential decomposition. We set up relationship between Chern-Simons vortex solution and topological number, which is determined by Hopf index and Brouwer degree. We also give the quantization of flux in this case. Then, we study the angular momentum of the vortex, which can be expressed in terms of the flux.

Topological constraints on scroll and spiral waves in excitable media

A conservation equation for topological charges of phase singularities (scroll and spiral waves) in excitable media is given. It provides some topological properties of scroll (spiral) waves: for example, the topological charge of the generated or annihilated spiral pair must be opposite. Additionally, we obtain another equation on scroll waves, which shows that singular filaments of scroll waves occur on a set of one-dimensional curves which may be either closed loops or infinite lines.

BRST invariant theory of a generalized 1+1 Dimensional nonlinear sigma model with topological term

We give a generalized Lagrangian density of 1 + 1 Dimensional O( 3) nonlinear sigma model with subsidiary constraints, different Lagrange multiplier fields and topological term, find a lost intrinsic constraint condition, convert the subsidiary constraints into inner constraints in the nonlinear sigma model, give the example of not introducing the lost constraint. N = 0, by comparing the example with the case of introducing the lost constraint, we obtain that when not introducing the lost constraint, one has to obtain a lot of various non-intrinsic constraints. We further deduce the gauge generator, give general BRST transformation of the model under the general conditions. It is discovered that there exists a gauge parameter beta originating from the freedom degree of BRST transformation in a general O( 3) nonlinear sigma model, and we gain the general commutation relations of ghost field.

Topological structure of the solitons solution in SU(3) Dunne-Jackiw-Pi-Trugenberger model

By using phi-mapping topological current theory and gauge potential decomposition, we discuss the self-dual equation and its solution in the SU(N) Dunne-Jackiw-Pi-Trugenberger model and obtain a new concrete self-dual equation with a 6 function. For the SU(3) case, we obtain a new self-duality solution and find the relationship between the soliton solution and topological number which is determined by the Hopf index and Brouwer degree of phi-mapping. In our solution, the flux of this soliton is naturally quantized.

Topological Diversity of Coordination Polymers Containing the Rigid Terephthalate and a Flexible N,N'-Type Ligand: Interpenetration, Polyrotaxane, and Polythreading

Reactions of zinc(II) or cadmium(II) salts with terephthalic acid (H(2)tp) and 1,3-bis(4-pyridyl) propane (bpp) have afforded four coordination polymers at room temperature, [Zn(mu-tp)(mu-bpp)](n)center dot 2nH(2)O (1), [Cd-2(mu-tp)(2)(mu-bpp)(3)](n)center dot 2nH(2)O (2), [Cd(mu-tp)(mu-bpp)(H2O)](n)center dot nH(2)O (3), and [Cd-2(mu-tp)(mu-bpp)(2)(bpp)(2)Br-2](n) (4). Single-crystal X-ray diffraction has revealed interesting topological features for these compounds.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

Bilayer Photoresist Insulator for High Performance Organic Thin-Film Transistors on Plastic Films

A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm(2)/Vs) and current on/off ratio (about 10(6)). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

Two new Cu-II coordination polymers: Studies of topological networks and water clusters

Two new Cull coordination polymers, namely [Cu-2(BDC)(2)(L)(4)(H2O)(2)]center dot 14H(2)O (1) and [Cu-1.5(BTC)(L)(1.5)(H2O)(0.5)]center dot 2H(2)O (2), where L = 1,1'-(1,4-butanediyl)bis(imidazole), BDC = 1,4-benzene dicarboxylate, and BTC = 1,3,5-benzenetricarboxylate, have been synthesized at room temperature. Complex 1 exhibits an unusual, square-planar, four-connected 2D (2)(6)4 net, which has been predicated by Wells. Interestingly, three types of water clusters, namely (H2O)(6), (H2O)(8), and (H2O)(10), are observed in the hydrogen-bonded layers constructed by the BDC ligands and water molecules. The BTC anion in compound 2 is coordinated to the Cu" cation as tetradentate ligand to form a (6(6))(2)(4(2)6(4)8(4))(2)(6(4)810) net containing three kinds of nonequivalent points, Thermogravimetric analyses (TGA) and IR spectra for 1 and 2 are also discussed in detail.

Extended topological indices and prediction of activities of chiral compounds

The activities/properties of two molecules with identical formula but different configuration states of the asymmetric atoms are different. Thus, usually the common topological indices are not suitable. In this study, the chiral topological indices were obtained by extending A(mi) indices suggested by our laboratory and molecular connectivity indices. The modified topologial indices have been used for the studies on D2 for dopamine receptor and a receptor activities of fourteen N-alkylated 3-(3-hydroxypyenyl)-piperidines. It has been observed that selected variables possess low correlations. The results obtained by using multiple regression analysis and artificial neural networks are satisfactory.