Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator


Autoria(s): Yu SY; Xu SA; Ma DG
Data(s)

2007

Resumo

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

Identificador

http://ir.ciac.jl.cn/handle/322003/14009

http://www.irgrid.ac.cn/handle/1471x/149771

Idioma(s)

英语

Fonte

Yu SY;Xu SA;Ma DG.Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator,CHINESE PHYSICS LETTERS,2007 ,24(12):3513-3515

Palavras-Chave #FIELD-EFFECT TRANSISTORS #ORGANIC TRANSISTORS #MOBILITY #SEMICONDUCTORS #TEMPERATURE
Tipo

期刊论文