新型结构LED大屏显示系统的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

立方相InGaN的生长及LED有源区的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基UV-LED材料生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED发光效率提高方法研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

LED 在液晶显示背光源应用中的关键技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

氮化物LED 材料生长及垂直结构器件制备技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED新型透明电极的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

微纳光学结构增强GaN LED出光效率研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-13T08:02:10Z No. of bitstreams: 1 博士毕业论文_刘宏伟.pdf: 3404178 bytes, checksum: e5e1511387570aa5c92a4cc48df47e81 (MD5)

基于横向外延生长的GaN LED 特性研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-13T08:18:55Z No. of bitstreams: 1 毕业论文_王良吉.pdf: 5299270 bytes, checksum: 6b0aeaa63a52321331f321143a5b0a09 (MD5)

Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector

A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.

LED照明的LCD背光源结构

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

GaN基功率型LED的N型欧姆接触电极的制备方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

一种氮化镓基小芯片LED阵列结构及制备方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

GaN基功率型LED的P、N双透明接触电极及制备方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)