AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究


Autoria(s): 刘乃鑫
Contribuinte(s)

李晋闽

Data(s)

2009

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-09-10T06:08:21Z (GMT). No. of bitstreams: 1 disk/eh2009/lnx.pdf: 2982352 bytes, checksum: 43562d1f2b9d0b43d0fb1fd0af1ecc0f (MD5) Previous issue date: 2009

Identificador

http://ir.semi.ac.cn/handle/172111/6144

http://www.irgrid.ac.cn/handle/1471x/60632

Idioma(s)

中文

Fonte

刘乃鑫.AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究.[博士].北京.中国科学院半导体研究所.2009

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文