AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究
Contribuinte(s) |
李晋闽 |
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Data(s) |
2009
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Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-09-10T06:08:21Z (GMT). No. of bitstreams: 1 disk/eh2009/lnx.pdf: 2982352 bytes, checksum: 43562d1f2b9d0b43d0fb1fd0af1ecc0f (MD5) Previous issue date: 2009 |
Identificador | |
Idioma(s) |
中文 |
Fonte |
刘乃鑫.AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究.[博士].北京.中国科学院半导体研究所.2009 |
Palavras-Chave | #微电子学与固体电子学 |
Tipo |
学位论文 |