An investigation of the mode characteristics of SOI submicron rib waveguides using the film mode matching method

The mode characteristics of SOI (silicon-on-insulator) submicron rib waveguides are very different from those of micrometer-sized ones. Using the full-vector film mode matching method, we propose a simple criterion to determine whether a waveguide mode is guided or not. The single-mode condition for deep-etched waveguides is obtained using this criterion. We also obtain the inherent TM mode leakage and sharp cancelation effects due to TE-TM mode coupling in shallow-etched rib waveguides from numerical simulations, which agree well with the analytical results based on total internal reflection and interference theories.

Analysis of mode characteristics for equilateral-polygonal resonators with a center hole

Mode characteristics for equilateral triangles, squares, and hexagonal resonators with a center hole are numerically simulated by the finite-different time domain (FDTD) technique. The center hole does not break the symmetry behavior of the original resonators and can result in modification of the mode field patterns and mode Q factors. In an equilateral triangle resonator the center hole can suppress the symmetry state of degenerate states with the merit of single mode operation. In a square resonator, the Q factor can be enhanced for some modes with a suitable size of the hole. For a hexagonal resonator with a side length of 1 mu m and a refractive index of 3.2, the mode Q factors first gradually decrease with the increase of the hole diameter for modes at a wavelength of about 1500 nm, then the modes transform to that of a microdisk with a jump of the mode wavelength as the hole diameter approaches 0.7 mu m. Finally, the mode Q factors greatly enhance as the hole diameter reaches about 1 mu m. The results indicate that the center hole can greatly modify mode characteristics, especially that of the mode Q factor. (C) 2009 Optical Society of America

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

2-ps passively mode-locked Nd : YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror

We have demonstrated stable self-starting passive mode-locking in a diode-end-pumped Nd: YVO4 laser using a semiconductor saturable absorber mirror (SESAM). An ln(0.25)Ga(0.75)As single quantum-well SESAM, which was grown by the metalorganic chemical-vapor deposition technique at low temperature, acts as a passive mode-locking device and an output coupler at the same time. Continuous-wave mode-locked transform-limited pulses were obtained at 1064 nm with a pulse duration of 2.1 ps and an average output power of 1.28 W at a repetition rate of 96.5 MHz. (c) 2005 American Institute of Physics.

Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

Finite-difference time-domain analysis of deformed square cavity filters with a traveling-wave-like filtering response by mode coupling

An add-drop filter based on a perfect square resonator can realize a maximum of only 25% power dropping because the confined modes are standing-wave modes. By means of mode coupling between two modes with inverse symmetry properties, a traveling-wave-like filtering response is obtained in a two-dimensional single square cavity filter with cut or circular corners by finite-difference time-domain simulation. The optimized deformation parameters for an add-drop filter can be accurately predicted as the overlapping point of the two coupling modes in an isolated deformed square cavity. More than 80% power dropping can be obtained in a deformed square cavity filter with a side length of 3.01 mu m. The free spectral region is decided by the mode spacing between modes, with the sum of the mode indices differing by 1. (c) 2007 Optical Society of America.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Dipole mode photonic crystal point defect laser on InGaAsP/InP

In this paper, we focus on the dipole mode of the two-dimensional (2D) photonic crystal (PC) single point defect cavity (SPDC) lasers and we report the fabrication and characterization of 2D PC SPDC lasers with the structure of adjusted innermost air holes. The photonic band and cavity Q factors are simulated by means of plane wave expansion (PWE) and finite-difference time-domain (FDTD), respectively. In order to improve the optical confinement of the SPDC, the diameter of the innermost holes was adjusted. Different lasing performances are observed experimentally. The experimental results agree with the theoretical prediction very well. (c) 2006 Elsevier B.V. All rights reserved.

Chiral symmetry analysis and rigid rotational invariance for the lattice dynamics of single-wall carbon nanotubes

We provide a detailed expression of the vibrational potential for the lattice dynamics of single-wall carbon nanotubes (SWCNT's) satisfying the requirements of the exact rigid translational as well as rotational symmetries, which is a nontrivial generalization of the valence force model for the planar graphene sheet. With the model, the low-frequency behavior of the dispersion of the acoustic modes as well as the flexure mode can be precisely calculated. Based upon a comprehensive chiral symmetry analysis, the calculated mode frequencies (including all the Raman- and infrared-active modes), velocities of acoustic modes, and the polarization vectors are systematically fitted in terms of the chiral angle and radius, where the restrictions of various symmetry operations of SWCNT's are fulfilled.

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Accurate mode analysis of ultraviolet-written channel waveguides

The transfer matrix method combined with the effective index method is adopted to model the silica-based channel waveguide patterned by UV writing. The effective indexes of the graded index channel waveguides with different dimension are calculated. The maximal error of the effective index is less than 3 x 10(-5). By this method, the number of the guided mode and the dimension range to guide certain modes can be obtained easily. Finally, the dimension range to guide a single mode is presented. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

Mode analysis of the UV-written channel waveguide - art. no. 60340J

The effective index method (EIM) was adopted to model the channel waveguide patterned by the UV in photosensitive silica film. The effective indexes of the different dimension symmetrical and asymmetrical channel waveguides were calculated, and the resource of the error of the method was pointed out. At last, the dimension rang to propagate single mode was presented.

Dipole mode photonic crystal point defect laser on InGaAsP/InP

In this paper, we focus on the dipole mode of the two-dimensional (2D) photonic crystal (PC) single point defect cavity (SPDC) lasers and we report the fabrication and characterization of 2D PC SPDC lasers with the structure of adjusted innermost air holes. The photonic band and cavity Q factors are simulated by means of plane wave expansion (PWE) and finite-difference time-domain (FDTD), respectively. In order to improve the optical confinement of the SPDC, the diameter of the innermost holes was adjusted. Different lasing performances are observed experimentally. The experimental results agree with the theoretical prediction very well. (c) 2006 Elsevier B.V. All rights reserved.