Single-mode behaviour judgment of optical waveguides by imaginary-distance beam propagation method under perfectly matched layer boundary condition

Imaginary-distance beam propagation method under the perfectly matched layer boundary condition is applied to judge single-mode behaviour of optical waveguides, for the first time to our knowledge. A new kind of silicon-on-insulator-based rib structures with half-circle cross-section is presented. The single-mode behaviour of this kind of waveguide with radius 2mum is investigated by this method. It is single-mode when the slab height is not smaller than the radius.

Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror

An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1 +/- 0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. Dimensions of the achieved PC corner mirror are less than ;7 x 7 mu m(2), which are only about one tenth of conventional wave-guide corner mirrors.

Realization of an ultracompact low-loss photonic crystal corner mirror

We report on the realization and characterization of an ultracompact, low-loss, and broadband corner mirror based on photonic crystals (PCs). By modifying the boundary layers of the PC region, extra losses of 1.1 +/- 0.4 dB per corner mirror are achieved for transverse-electronic polarization for silicon-on-insulator ridge waveguides fabricated by electron beam lithography and inductively coupled plasma etching. Dimensions of the PC corner mirror are less than 7 x 7 mu m(2), which are only about one tenth of conventional waveguide corner mirrors.

Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Multimode-interference-type thermo-optic variable optical attenuator with a response frequency of 10 kHz

A thermo-optic variable optical attenuator based on a multimode interference coupler principle is fabricated. The propagation loss of the fabricated device is 1.6 to 3.8 dB at the wavelength range 1510 to 1610 nm, which is very near the calculated value (1.2 dB) by the finite difference beam propagation method. The maximum power consumption is 363 mW and the dynamic attenuation range is 0 to 26 dB. The response frequency of the fabricated attenuator is about 10 kHz. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Fabrication of 2 x 2 tapered multimode interference coupler

The authors demonstrate a 3dB 2 x 2 parabolically tapered multimode interference (MMT) coupler with a large cross-section and space between the different ports using silicon-on-insulator technology. The device exhibits a uniformity of < 0.8dB and can be used in the realisation of an MMI-based optical switch with a high extinction ratio.

1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector

The high quality Ge islands material with 1.55 mu m photo-response grown on Sol substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 mu m Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching, in a basic solution from the backside of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mu m. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.

A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node

This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.

Design of Tapered Rib Spot-Size Converter with Double-Cladding Structure

A novel structure of spot-size converter is designed to allow low loss and large alignment tolerance between single-mode rib waveguide devices and fiber arrays theoretically. The spot-size converter consists of a tapered rib core region and a double-cladding region. Through optimizing parameters,an expanded mode field can be tightly confined in the inner cladding and thus radiation loss be reduced largely at the tapered region. The influence of refractive index and thickness of the inner cladding on coupling loss is analyzed in particular. A novel,easy method of fabricating tapered rib spot-size converter based on silicon-on-insulator material is proposed.

Glass wafers bonding via Diels-Alder reaction at mild temperature

In this paper, we introduced a novel bonding method of glass wafers by Diels-Alder reaction at mild temperature. After standard hydroxylization and aminosilylation, two wafers were modified by 2-furaldehyde and maleic anhydride, respectively. Then they were brought into close contact and tightly held with a clamping fixture. A strong bonding could be achieved by annealing for 5 h at 200 degrees C. Bonding strength is as high as 1.78 MPa and sufficient for most application of microfluidic chips.

Bonding quartz wafers by the atom transfer radical polymerization of the glycidyl methacrylate at mild temperature

In this paper, we presented a novel covalent bonding process between two quartz wafers at 300 degrees C. High-quality wafer bonding was formed by the hydroxylization, aminosilylation and atom transfer radical polymerization (ATRP) of glycidyl methacrylate (GMA), respectively, on quartz wafer surfaces, followed by close contact of the GMA functional wafer and the aminosilylation wafer, the epoxy group opening ring reaction was catalyzed by the amino and solidified to form the covalent bonding of the quartz wafers. The shear force between two wafers in all bonding samples was higher than 1.5 MPa. Microfluidic chips bonded by the above procedures had high transparency and the present procedure avoided the adhesive to block or flow into the channel.

Submillimeter wave frequency selective surface with polarisation independent spectral responses

This paper reports the design, construction and electromagnetic performance of a new freestanding frequency selective surface (FSS) structure which generates coincident spectral responses for dual polarisation excitation at oblique angles of incidence. The FSS is required to allow transmission of 316.5 - 325.5 GHz radiation with a loss = 0.6 dB and to achieve = 30 dB rejection from 349.5 - 358.5 GHz. It should also exhibit crosspolarisation levels below -25 dB, all criteria being satisfied simultaneously for TE and TM polarisations at 45° incidence. The filter consists of two identical, 30 mm diameter, 12.5 ?m thick, optically flat, perforated metal screens separated by 450 ?m. Each of the ˜5000 unit cells contains two nested, short circuited, rectangular loop slots and a rectangular dipole slot. The nested elements provide a passband spectral response centred at 320 GHz in the TE and TM planes; the dipole slot increases the filter roll-off above resonance. The FSS was fabricated from silicon-on-insulator wafers using precision micromachining and plating processes including the use of Deep Reactive Ion Etching (DRIE) to pattern the individual slots and remove the substrate under the periodic arrays. Quasi–optical transmission measurements in the 250 – 360 GHz range yielded virtually identical copolarised spectral responses, with the performance meeting or exceeding the above specifications. Experimental results are in excellent agreement with numerical predictions.

Amplitude response of a unilaterally constrained nonlinear micromechanical resonator

Dynamical systems that involve impacts frequently arise in engineering. This Letter reports a study of such a system at microscale that consists of a nonlinear resonator operating with an unilateral impact. The microresonators were fabricated on silicon-on-insulator wafers by using a one-mask process and then characterised by using the capacitively driving and sensing method. Numerical results concerning the dynamics of this vibro-impact system were verified by the experiments. Bifurcation analysis was used to provide a qualitative scenario of the system steady-state solutions as a function of both the amplitude and the frequency of the external driving sinusoidal voltage. The results show that the amplitude of resonant peak is levelled off owing to the impact effect and that the bandwidth of impacting is dependent upon the nonlinearity and the operating conditions.