First experimental demonstration of low-cost VCSEL-intensity modulated end-to-end real-time optical OFDM signal transmission at 11.25Gb/s over 25km SSMFs

Low-cost, narrow modulation bandwidth, un-cooled VCSELs can be utilized to directly modulate 64-QAM-encoded 11.25Gb/s signals for end-to-end real-time optical OFDM transmission over 25km SSMF IMDD systems with excellent performance robustness. © 2011 Optical Society of America.

Wavelength reused bidirectional transmission of adaptively modulated optical OFDM signals in SOA/RSOA intensity modulator-based WDM-PONs

Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a WDM-PON incorporating a SOA intensity modulator and a RSOA intensity modulator in the OLT and ONU, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5Gb/s. It is shown that the RB noise and crosstalk effects are the dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10Gb/s downstream and 6Gb/s upstream over 40km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing inline optical amplification and chromatic dispersion compensation. In particular, the transmission performance can be improved to 23Gb/s downstream and 8Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems. Copyright © 2010 The authors.

Optimization of nanotube electrode geometry in a liquid crystal media from wavefront aberrations

This paper presents experimental optimization of number and geometry of nanotube electrodes in a liquid crystal media from wavefront aberrations for realizing nanophotonic devices. The refractive-index gradient profiles from different nanotube geometries-arrays of one, three, four, and five-were studied along with wavefront aberrations using Zernike polynomials. The optimizations help the device to make application in the areas of voltage reconfigurable microlens arrays, high-resolution displays, wavefront sensors, holograms, and phase modulators. © 2012 Optical Society of America.

The energy required to produce materials: constraints on energy-intensity improvements, parameters of demand.

In this paper, we review the energy requirements to make materials on a global scale by focusing on the five construction materials that dominate energy used in material production: steel, cement, paper, plastics and aluminium. We then estimate the possibility of reducing absolute material production energy by half, while doubling production from the present to 2050. The goal therefore is a 75 per cent reduction in energy intensity. Four technology-based strategies are investigated, regardless of cost: (i) widespread application of best available technology (BAT), (ii) BAT to cutting-edge technologies, (iii) aggressive recycling and finally, and (iv) significant improvements in recycling technologies. Taken together, these aggressive strategies could produce impressive gains, of the order of a 50-56 per cent reduction in energy intensity, but this is still short of our goal of a 75 per cent reduction. Ultimately, we face fundamental thermodynamic as well as practical constraints on our ability to improve the energy intensity of material production. A strategy to reduce demand by providing material services with less material (called 'material efficiency') is outlined as an approach to solving this dilemma.

Effects of cadmium on chlorophyll content, photochemical efficiency, and photosynthetic intensity of Canna indica Linn.

The effects of cadmium (Cd2+) on growth status, chlorophyll (Chl) content, photochemical efficiency, and photosynthetic intensity were studied on Canna indica Linn. Plant specimens that were produced from a constructed wetland and precultivated hydroponically in 20 L of 1/10 Hoagland solution under greenhouse conditions for I week were exposed to cadmium in concentrations of 0, 0.4, 0.8, 1.6 and 3.2 mg L- Cd2+, respectively. The results show that leaves were injured in the Cd2+ solution by the third day of exposure and the injury became more serious with an increase in the applied heavy metal. Under 3.2 mg L-1 Cd2+ treatment, growth retardation, the decrease of chlorophyll content from 0.70 to 0.43 mg g(-1) FW, and a decrease in Chl a/b ratio from 2.0 to 1.2 were observed. Chl a was more sensitive than Chl b to Cd2+ stress. The decrease was the same with photochemical efficiency. Photosynthetic intensity decreased by 13.3% from 1.5X10(4) mumol m(-2)s(-1) CO2 in control to 1.3x10(4) mumol m(2)s(-1) CO2 in the treatment of 3.2 mg L-1. Because Canna species are used in heavy metal phytoremediation, these results show that C. indica can tolerate 0.4 to 0.8 mg L-1 Cd2+. Therefore, it is a potential species for phytoremediation of cadmium with some limitations only at higher concentrations.

Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs) coupling with InGaN/GaN quantum wells (QWs) have been systematically studied. The SP-QW coupling behaviors in the areas of GaN cap layer coated with silver thin film were compared at different temperatures and excitation powers. It is found that the internal quantum efficiency (IQE) of the light emitting diodes (LEDs) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to SP-QW coupling. The observation is explained by the balance between the extraction efficiency of SPs and the IQE of LEDs

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.

Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2

InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.