Studies in the geometry of the discrete plane

This thesis is an attempt to initiate the development of a discrete geometry of the discrete plane H = {(qmxo,qnyo); m,n e Z - the set of integers}, where q s (0,1) is fixed and (xO,yO) is a fixed point in the first quadrant of the complex plane, xo,y0 ¢ 0. The discrete plane was first considered by Harman in 1972, to evolve a discrete analytic function theory for geometric difference functions. We shall mention briefly, through various sections, the principle of discretization, an outline of discrete a alytic function theory, the concept of geometry of space and also summary of work done in this thesis

Continuous production of L-glutaminase by an immobilized marine Pseudomonas sp BTMS-51 in a packed bed reactor

A marine Pseudomonas sp BTMS-51, immobilized by Ca-alginate gel entrapment was used for the production of extracellular Lglutaminase under repeated batch process and continuous process employing a packed bed reactor (PBR). Immobilized cells could produce an average of 25 U/ml of enzyme over 20 cycles of repeated batch operation and did not show any decline in production upon reuse. The enzyme yield correlated well with the biomass content in the beads. Continuous production of the enzyme in PBR was studied at different substrate concentrations and dilution rates. In general, the volumetric productivity increased with increased dilution rate and substrate concentrations and the substrate conversion efficiency declined. The PBR operated under conditions giving maximal substrate conversion efficiency gave an average yield of 21.07 U/ml and an average productivity of 13.49 U/ml/h. The system could be operated for 120 h without any decline in productivity

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Geometry and Photometry in 3D Visual Recognition

The report addresses the problem of visual recognition under two sources of variability: geometric and photometric. The geometric deals with the relation between 3D objects and their views under orthographic and perspective projection. The photometric deals with the relation between 3D matte objects and their images under changing illumination conditions. Taken together, an alignment-based method is presented for recognizing objects viewed from arbitrary viewing positions and illuminated by arbitrary settings of light sources.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

Hilbert space on probability density functions with Aitchison geometry

Compositional data analysis motivated the introduction of a complete Euclidean structure in the simplex of D parts. This was based on the early work of J. Aitchison (1986) and completed recently when Aitchinson distance in the simplex was associated with an inner product and orthonormal bases were identified (Aitchison and others, 2002; Egozcue and others, 2003). A partition of the support of a random variable generates a composition by assigning the probability of each interval to a part of the composition. One can imagine that the partition can be refined and the probability density would represent a kind of continuous composition of probabilities in a simplex of infinitely many parts. This intuitive idea would lead to a Hilbert-space of probability densities by generalizing the Aitchison geometry for compositions in the simplex into the set probability densities

Aitchison Geometry for Probability and Likelihood as a new approach to mathematical statistics

The Aitchison vector space structure for the simplex is generalized to a Hilbert space structure A2(P) for distributions and likelihoods on arbitrary spaces. Central notations of statistics, such as Information or Likelihood, can be identified in the algebraical structure of A2(P) and their corresponding notions in compositional data analysis, such as Aitchison distance or centered log ratio transform. In this way very elaborated aspects of mathematical statistics can be understood easily in the light of a simple vector space structure and of compositional data analysis. E.g. combination of statistical information such as Bayesian updating, combination of likelihood and robust M-estimation functions are simple additions/ perturbations in A2(Pprior). Weighting observations corresponds to a weighted addition of the corresponding evidence. Likelihood based statistics for general exponential families turns out to have a particularly easy interpretation in terms of A2(P). Regular exponential families form finite dimensional linear subspaces of A2(P) and they correspond to finite dimensional subspaces formed by their posterior in the dual information space A2(Pprior). The Aitchison norm can identified with mean Fisher information. The closing constant itself is identified with a generalization of the cummulant function and shown to be Kullback Leiblers directed information. Fisher information is the local geometry of the manifold induced by the A2(P) derivative of the Kullback Leibler information and the space A2(P) can therefore be seen as the tangential geometry of statistical inference at the distribution P. The discussion of A2(P) valued random variables, such as estimation functions or likelihoods, give a further interpretation of Fisher information as the expected squared norm of evidence and a scale free understanding of unbiased reasoning

Vertebrates Limb Geometry in the Simplex space

A novel metric comparison of the appendicular skeleton (fore and hind limb) of different vertebrates using the Compositional Data Analysis (CDA) methodological approach it’s presented. 355 specimens belonging in various taxa of Dinosauria (Sauropodomorpha, Theropoda, Ornithischia and Aves) and Mammalia (Prothotheria, Metatheria and Eutheria) were analyzed with CDA. A special focus has been put on Sauropodomorpha dinosaurs and the Aitchinson distance has been used as a measure of disparity in limb elements proportions to infer some aspects of functional morphology

Eigen Faces: Detecció, Classificació/Reconeixement de cares

En aquest projecte es pretén utilitzar mètodes coneguts com ara Viola&Jones (detecció) i EigenFaces (reconeixement) per a detectar i reconèixer cares dintre d’imatges de vídeo. Per a aconseguir aquesta tasca cal partir d’un conjunt de dades d’entrenament per a cada un dels mètodes (base de dades formada per imatges i anotacions manuals). A partir d’aquí, l’aplicació, ha de ser capaç de detectar cares en noves imatges i reconèixer-les (identificar de quina cara es tracta)

Hyperbolic Geometry

Exercises, exam questions and solutions for a fourth year hyperbolic geometry course. Diagrams for the questions are all together in the support.zip file, as .eps files

Proyecto PARTIC : memoria : 2003-2004.

El trabajo no ha sido publicado. Entre los anexos, se encuentra varia documentación, como la justificación del proyecto, las actas, etc. El resumen está basado en una ficha elaborada por los autores o el responsable

El surgimiento del Orden Internacional Moderno según Tierra y Mar de Carl Schmitt

El propósito de esta disertación es rescatar las interpretaciones de Tierra y Mar en lo que se refiere al surgimiento del Orden Internacional Moderno, con el objetivo de explicar la percepción de los acontecimientos por parte de Carl Schmitt y su aporte filosófico-jurídico a la comprensión de la historia y teoría de las Relaciones Internacionales. La particularidad de esta obra de Schmitt es su estilo profundo: la variedad y amplitud de temas que abarca, que contrasta con la brevedad del texto. El presente trabajo ha encontrado vacíos en el estudio de Tierra y Mar, así como interpretaciones distintas a las propuestas por el autor, en lo concerniente al surgimiento del Orden Internacional Moderno. La originalidad de la obra de Schmitt consiste en proponer, en realidad, dos órdenes internacionales distintos que surgen en el mundo moderno.

Enfoques para la gestión del riesgo sistémico

En el contexto organizacional actual, que se caracteriza por ser hiper-conectado, cambiante, globalizado y cargado de incertidumbre, la capacidad de las organizaciones para identificar y tratar provechosamente el riesgo se hace necesaria e ineludible. Dicho más claro: gestionar adecuadamente el riesgo se convierte en un aspecto crítico para la perdurabilidad de las organizaciones. Más allá de las comprensiones tradicionales del riesgo, cuyo núcleo es el riesgo financiero, nuevas tendencias –más generales y abarcadoras– se han gestado en las últimas décadas. Una de la más destacada es la gestión del riesgo sistémico. Pese a este reconocimiento, sin embargo, siguen predominando los enfoques analítico-financieros, sobre todo en el ámbito latinoamericano. Este trabajo de grado pretende, por tanto, hacer un análisis sobre la gestión del riesgo sistémico e identificar las diferentes tendencias del riesgo y sus potencialidades de cara al ambiente organizacional actual.