999 resultados para triple-mode resonators


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We study the production of three gauge bosons (W(+)W(-)Z(0) and W(+)W(-)gamma) at the next generation of linear e(+)e(-) colliders operating in the yy mode. We analyze the total cross sections as well as several kinematical distributions of the final state particles. We find out that a linear e(+)e(-) machine operating in the rr mode will produce 5-10 times more three-gauge-boson states compared to the standard e(+)e(-) mode at high energies.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The main objective of this study was to apply three-mode principal component analysis to assess the triple interaction (genotype x location x feeding) on direct genetic value for weight at 205 days of age. We used 60 sires with offspring in three regions of northeastern Brazil (Maranhao, Mata and Agreste, and Reconcavo Baiano) and raised on a pasture regime or with supplementation. There was no interaction between genotype and location, but there was a correlation between genotype and direct effect of feeding. The use of sires should be dictated according to the system of rearing of their offspring.

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In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DT mode and the standard biasing configuration. Moreover, for the first time, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance. Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional (3-D) numerical simulations for different channel doping concentrations in triple-gate DTMOS FinFETs. The results indicate that the DTMOS FinFETs always yield superior characteristic; and larger transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode, which is desirable for high performance low-power/low-voltage applications. (C) 2011 Elsevier Ltd. All rights reserved.

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Arabidopsis thaliana has emerged as a leading model species in plant genetics and functional genomics including research on the genetic causes of heterosis. We applied a triple testcross (TTC) design and a novel biometrical approach to identify and characterize quantitative trait loci (QTL) for heterosis of five biomass-related traits by (i) estimating the number, genomic positions, and genetic effects of heterotic QTL, (ii) characterizing their mode of gene action, and (iii) testing for presence of epistatic effects by a genomewide scan and marker x marker interactions. In total, 234 recombinant inbred lines (RILs) of Arabidopsis hybrid C24 x Col-0 were crossed to both parental lines and their F1 and analyzed with 110 single-nucleotide polymorphism (SNP) markers. QTL analyses were conducted using linear transformations Z1, Z2, and Z3 calculated from the adjusted entry means of TTC progenies. With Z1, we detected 12 QTL displaying augmented additive effects. With Z2, we mapped six QTL for augmented dominance effects. A one-dimensional genome scan with Z3 revealed two genomic regions with significantly negative dominance x additive epistatic effects. Two-way analyses of variance between marker pairs revealed nine digenic epistatic interactions: six reflecting dominance x dominance effects with variable sign and three reflecting additive x additive effects with positive sign. We conclude that heterosis for biomass-related traits in Arabidopsis has a polygenic basis with overdominance and/or epistasis being presumably the main types of gene action.

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In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.

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A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

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A procedure for measuring the overheating temperature (ΔT ) of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of connecting to an electric load. The basis of the procedure is the measurement of the open-circuit voltage (VO C ) during the initial time period after the fast disconnection of the external resistive load. The simultaneous temperature control on an external heated part of a PV module gives the means for determining the value of VO C at ambient temperature. Comparing it with that measured after switching OFF the load makes the calculation of ΔT possible. Calibration data on the VO C = f(T ) dependences for single-junction AlGaAs/GaAs and triple-junction InGaP/GaAs/Ge PV cells are presented. The temperature dynamics in the PV cells has been determined under flash illumination and during fast commutation of the load. Temperature measurements were taken in two cases: converting continuous laser power by single-junction cells and converting solar power by triple-junction cells operating in the concentrator modules.

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At head of title: Manuel M. Pinto h.

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Mode of access: Internet.

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Half-title: Primeras batallas contra la Triple alianza.

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Reprinted from Volume 2, chapter 2 of "The Memoirs of Francesco Crispi."