985 resultados para static random access memory
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Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.
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Due to the lack of optical random access memory, optical fiber delay line (FDL) is currently the only way to implement optical buffering. Feed-forward and feedback are two kinds of FDL structures in optical buffering. Both have advantages and disadvantages. In this paper, we propose a more effective hybrid FDL architecture that combines the merits of both schemes. The core of this switch is the arrayed waveguide grating (AWG) and the tunable wavelength converter (TWC). It requires smaller optical device sizes and fewer wavelengths and has less noise than feedback architecture. At the same time, it can facilitate preemptive priority routing which feed-forward architecture cannot support. Our numerical results show that the new switch architecture significantly reduces packet loss probability.
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One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.
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A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.
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Key technology applications like magnetoresistive sensors or the Magnetic Random Access Memory (MRAM) require reproducible magnetic switching mechanisms. i.e. predefined remanent states. At the same time advanced magnetic recording schemes push the magnetic switching time into the gyromagnetic regime. According to the Landau-Lifschitz-Gilbert formalism, relevant questions herein are associated with magnetic excitations (eigenmodes) and damping processes in confined magnetic thin film structures.rnObjects of study in this thesis are antiparallel pinned synthetic spin valves as they are extensively used as read heads in today’s magnetic storage devices. In such devices a ferromagnetic layer of high coercivity is stabilized via an exchange bias field by an antiferromagnet. A second hard magnetic layer, separated by a non-magnetic spacer of defined thickness, aligns antiparallel to the first. The orientation of the magnetization vector in the third ferromagnetic NiFe layer of low coercivity - the freelayer - is then sensed by the Giant MagnetoResistance (GMR) effect. This thesis reports results of element specific Time Resolved Photo-Emission Electron Microscopy (TR-PEEM) to image the magnetization dynamics of the free layer alone via X-ray Circular Dichroism (XMCD) at the Ni-L3 X-ray absorption edge.rnThe ferromagnetic systems, i.e. micron-sized spin valve stacks of typically deltaR/R = 15% and Permalloy single layers, were deposited onto the pulse leading centre stripe of coplanar wave guides, built in thin film wafer technology. The ferromagnetic platelets have been applied with varying geometry (rectangles, ellipses and squares), lateral dimension (in the range of several micrometers) and orientation to the magnetic field pulse to study the magnetization behaviour in dependence of these magnitudes. The observation of magnetic switching processes in the gigahertz range became only possible due to the joined effort of producing ultra-short X-ray pulses at the synchrotron source BESSY II (operated in the so-called low-alpha mode) and optimizing the wave guide design of the samples for high frequency electromagnetic excitation (FWHM typically several 100 ps). Space and time resolution of the experiment could be reduced to d = 100 nm and deltat = 15 ps, respectively.rnIn conclusion, it could be shown that the magnetization dynamics of the free layer of a synthetic GMR spin valve stack deviates significantly from a simple phase coherent rotation. In fact, the dynamic response of the free layer is a superposition of an averaged critically damped precessional motion and localized higher order spin wave modes. In a square platelet a standing spin wave with a period of 600 ps (1.7 GHz) was observed. At a first glance, the damping coefficient was found to be independent of the shape of the spin-valve element, thus favouring the model of homogeneous rotation and damping. Only by building the difference in the magnetic rotation between the central region and the outer rim of the platelet, the spin wave becomes visible. As they provide an additional efficient channel for energy dissipation, spin waves contribute to a higher effective damping coefficient (alpha = 0.01). Damping and magnetic switching behaviour in spin valves thus depend on the geometry of the element. Micromagnetic simulations reproduce the observed higher-order spin wave mode.rnBesides the short-run behaviour of the magnetization of spin valves Permalloy single layers with thicknesses ranging from 3 to 40 nm have been studied. The phase velocity of a spin wave in a 3 nm thick ellipse could be determined to 8.100 m/s. In a rectangular structure exhibiting a Landau-Lifschitz like domain pattern, the speed of the field pulse induced displacement of a 90°-Néel wall has been determined to 15.000 m/s.rn
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Conventional dual-rail precharge logic suffers from difficult implementations of dual-rail structure for obtaining strict compensation between the counterpart rails. As a light-weight and high-speed dual-rail style, balanced cell-based dual-rail logic (BCDL) uses synchronised compound gates with global precharge signal to provide high resistance against differential power or electromagnetic analyses. BCDL can be realised from generic field programmable gate array (FPGA) design flows with constraints. However, routings still exist as concerns because of the deficient flexibility on routing control, which unfavourably results in bias between complementary nets in security-sensitive parts. In this article, based on a routing repair technique, novel verifications towards routing effect are presented. An 8 bit simplified advanced encryption processing (AES)-co-processor is executed that is constructed on block random access memory (RAM)-based BCDL in Xilinx Virtex-5 FPGAs. Since imbalanced routing are major defects in BCDL, the authors can rule out other influences and fairly quantify the security variants. A series of asymptotic correlation electromagnetic (EM) analyses are launched towards a group of circuits with consecutive routing schemes to be able to verify routing impact on side channel analyses. After repairing the non-identical routings, Mutual information analyses are executed to further validate the concrete security increase obtained from identical routing pairs in BCDL.
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Current analytical assay methods for ampicillin sodium and cloxacillin sodium are discussed and compared, High Performance Liquid Chromatography (H.P.L.C.) being chosen as the most accurate, specific and precise. New H.P.L.C. methods for the analysis of benzathine cloxacillin; benzathine penicillin V; procaine penicillin injection B.P.; benethamine penicillin injection; fortified B.P.C.; benzathine penicillin injection; benzathine penicillin injection, fortified B.P.C.; benzathine penicillin suspnsion; ampicillin syrups and penicillin syrups are described. Mechanical or chemical damage to column packings is often associated with H.P.L.C. analysis. One type, that of channel formation, is investigated. The high linear velocity of solvent and solvent pulsing during the pumping cycle were found to be the cause of this damage. The applicability of nonisotherrnal kinetic experiments to penicillin V preparations, including formulated paediatric syrups, is evaluated. A new type of nonisotherrnal analysis, based on slope estimation and using a 64K Random Access Memory (R.A.M.) microcomputer is described. The name of the program written for this analysis is NONISO. The distribution of active penicillin in granules for reconstitution into ampicillin and penicillin V syrups, and its effect on the stability of the reconstituted products, are investigated. Changing the diluent used to reconstitue the syrups was found to affect the stability of the product. Dissolution and stability of benzathine cloxacillin at pH2, pH6 and pH9 is described, with proposed dissolution mechanisms and kinetic analysis to support these mechanisms. Benzathine and cloxacillin were found to react in solution at pH9, producing an insoluble amide.
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Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971. Kesti kuitenkin yli kolmekymmentä vuotta ennen kuin teoria pystyttiin yhdistämään kokeellisiin tuloksiin. Vuonna 2008 Hewlett Packard julkaisi artikkelin, jossa he väittivät valmistaneensa ensimmäisen toimivan memristorin. Memristori eli muistivastus on resistiivinen komponentti, jonka vastusarvoa pystytään muuttamaan. Nimens mukaisesti memristori kykenee myös säilyttämään vastusarvonsa ilman jatkuvaa virtaa ja jännitettä. Tyypillisesti memristorilla on vähintään kaksi vastusarvoa, joista kumpikin pystytään valitsemaan syöttämällä komponentille jännitettä tai virtaa. Tämän vuoksi memristoreita kutsutaankin usein resistiivisiksi kytkimiksi. Resistiivisiä kytkimiä tutkitaan nykyään paljon erityisesti niiden mahdollistaman muistiteknologian takia. Resistiivisistä kytkimistä rakennettua muistia kutsutaan ReRAM-muistiksi (lyhenne sanoista resistive random access memory). ReRAM-muisti on Flash-muistin tapaan haihtumaton muisti, jota voidaan sähköisesti ohjelmoida tai tyhjentää. Flash-muistia käytetään tällä hetkellä esimerkiksi muistitikuissa. ReRAM-muisti mahdollistaa kuitenkin nopeamman ja vähävirtaiseman toiminnan Flashiin verrattuna, joten se on tulevaisuudessa varteenotettava kilpailija markkinoilla. ReRAM-muisti mahdollistaa myös useammin bitin tallentamisen yhteen muistisoluun binäärisen (”0” tai ”1”) toiminnan sijaan. Tyypillisesti ReRAM-muistisolulla on kaksi rajoittavaa vastusarvoa, mutta näiden kahden tilan välille pystytään mahdollisesti ohjelmoimaan useampia tiloja. Muistisoluja voidaan kutsua analogisiksi, jos tilojen määrää ei ole rajoitettu. Analogisilla muistisoluilla olisi mahdollista rakentaa tehokkaasti esimerkiksi neuroverkkoja. Neuroverkoilla pyritään mallintamaan aivojen toimintaa ja suorittamaan tehtäviä, jotka ovat tyypillisesti vaikeita perinteisille tietokoneohjelmille. Neuroverkkoja käytetään esimerkiksi puheentunnistuksessa tai tekoälytoteutuksissa. Tässä diplomityössä tarkastellaan Ta2O5 -perustuvan ReRAM-muistisolun analogista toimintaa pitäen mielessä soveltuvuus neuroverkkoihin. ReRAM-muistisolun valmistus ja mittaustulokset käydään läpi. Muistisolun toiminta on harvoin täysin analogista, koska kahden rajoittavan vastusarvon välillä on usein rajattu määrä tiloja. Tämän vuoksi toimintaa kutsutaan pseudoanalogiseksi. Mittaustulokset osoittavat, että yksittäinen ReRAM-muistisolu kykenee binääriseen toimintaan hyvin. Joiltain osin yksittäinen solu kykenee tallentamaan useampia tiloja, mutta vastusarvoissa on peräkkäisten ohjelmointisyklien välillä suurta vaihtelevuutta, joka hankaloittaa tulkintaa. Valmistettu ReRAM-muistisolu ei sellaisenaan kykene toimimaan pseudoanalogisena muistina, vaan se vaati rinnalleen virtaa rajoittavan komponentin. Myös valmistusprosessin kehittäminen vähentäisi yksittäisen solun toiminnassa esiintyvää varianssia, jolloin sen toiminta muistuttaisi enemmän pseudoanalogista muistia.
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The use of n-tuple or weightless neural networks as pattern recognition devices is well known (Aleksander and Stonham, 1979). They have some significant advantages over the more common and biologically plausible networks, such as multi-layer perceptrons; for example, n-tuple networks have been used for a variety of tasks, the most popular being real-time pattern recognition, and they can be implemented easily in hardware as they use standard random access memories. In operation, a series of images of an object are shown to the network, each being processed suitably and effectively stored in a memory called a discriminator. Then, when another image is shown to the system, it is processed in a similar manner and the system reports whether it recognises the image; is the image sufficiently similar to one already taught? If the system is to be able to recognise and discriminate between m-objects, then it must contain m-discriminators. This can require a great deal of memory. This paper describes various ways in which memory requirements can be reduced, including a novel method for multiple discriminator n-tuple networks used for pattern recognition. By using this method, the memory normally required to handle m-objects can be used to recognise and discriminate between 2^m — 2 objects.
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The use of n-tuple or weightless neural networks as pattern recognition devices has been well documented. They have a significant advantages over more common networks paradigms, such as the multilayer perceptron in that they can be easily implemented in digital hardware using standard random access memories. To date, n-tuple networks have predominantly been used as fast pattern classification devices. The paper describes how n-tuple techniques can be used in the hardware implementation of a general auto-associative network.
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8th International Workshop on Multiple Access Communications (MACOM2015), Helsinki, Finland.
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In next generation Internet-of-Things, the overhead introduced by grant-based multiple access protocols may engulf the access network as a consequence of the proliferation of connected devices. Grant-free access protocols are therefore gaining an increasing interest to support massive multiple access. In addition to scalability requirements, new demands have emerged for massive multiple access, including latency and reliability. The challenges envisaged for future wireless communication networks, particularly in the context of massive access, include: i) a very large population size of low power devices transmitting short packets; ii) an ever-increasing scalability requirement; iii) a mild fixed maximum latency requirement; iv) a non-trivial requirement on reliability. To this aim, we suggest the joint utilization of grant-free access protocols, massive MIMO at the base station side, framed schemes to let the contention start and end within a frame, and succesive interference cancellation techniques at the base station side. In essence, this approach is encapsulated in the concept of coded random access with massive MIMO processing. These schemes can be explored from various angles, spanning the protocol stack from the physical (PHY) to the medium access control (MAC) layer. In this thesis, we delve into both of these layers, examining topics ranging from symbol-level signal processing to succesive interference cancellation-based scheduling strategies. In parallel with proposing new schemes, our work includes a theoretical analysis aimed at providing valuable system design guidelines. As a main theoretical outcome, we propose a novel joint PHY and MAC layer design based on density evolution on sparse graphs.
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Recent years have witnessed an increasing evolution of wireless mobile networks, with an intensive research work aimed at developing new efficient techniques for the future 6G standards. In the framework of massive machine-type communication (mMTC), emerging Internet of Things (IoT) applications, in which sensor nodes and smart devices transmit unpredictably and sporadically short data packets without coordination, are gaining an increasing interest. In this work, new medium access control (MAC) protocols for massive IoT, capable of supporting a non-instantaneous feedback from the receiver, are studied. These schemes guarantee an high time for the acknowledgment (ACK) messages to the base station (BS), without a significant performance loss. Then, an error floor analysis of the considered protocols is performed in order to obtain useful guidelines for the system design. Furthermore, non-orthogonal multiple access (NOMA) coded random access (CRA) schemes based on power domain are here developed. The introduction of power diversity permits to solve more packet collision at the physical (PHY) layer, with an important reduction of the packet loss rate (PLR) in comparison to the number of active users in the system. The proposed solutions aim to improve the actual grant-free protocols, respecting the stringent constraints of scalability, reliability and latency requested by 6G networks.
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In this thesis asynchronous contention resolution diversity slotted ALOHA (ACRDA) is studied and implemented on computer to simulate a typical massive IoT scenario. Chapter 1 gives a general overview of existing multiple access schemes, reporting their fundamental concepts focusing more on Coded Random Access schemes and their characteristics. In Chapter 2 the asynchronous protocol ACRDA is explained in depth analyzing all parts of the scheme. In the third Chapter the results obtained following various simulations of the asynchronous scheme are reported and their performance are analyzed.
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10th Conference on Telecommunications (Conftele 2015), Aveiro, Portugal.