Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Controlled growth orientation of carbon nanotube pillars by catalyst patterning in microtrenches

We present a novel method for controlling the growth orientation of individual carbon nanotube (CNT) microstructures on a silicon wafer substrate. Our method controls the CNT forest orientation by patterning the catalyst layer used in the CNTs growth on slanted KOH edges. The overlap of catalyst area on the horizontal bottom and sloped sidewall surfaces of the KOH-etched substrate enables precise variation of the growth direction. These inclined structures can profit from the outstanding mechanical, electrical, thermal, and optical properties of CNTs and can therefore improve the performance of several MEMS devices. Inclined CNT microstructures could for instance be used as cantilever springs in probe card arrays, as tips in dip-pen lithography, and as sensing element in advanced transducers. ©2009 IEEE.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer

High quality ZnO films have been successfully grown on a Si (100) substrate by metal organic chemical vapour deposition with a gamma-Al2O3 buffer. The crystal structure, surface morphology and optical properties of the ZnO films were characterized by x-ray diffraction, Raman spectroscopy, atomic force microscopy and photoluminescence (PL) spectroscopy. The propel-ties of the films with the Al2O3 buffer were improved in comparison with those of as-grown ZnO films. It is shown that the ZnO films with the gamma-Al2O3 buffer grown on Si (100) substrates have a highly-preferential c-axis (0002) orientation, a narrow (0002) peak, smooth surface morphology and better PL spectral properties. This demonstrates that the use of gamma-Al2O3/Si as a ZnO substrate is beneficial for reducing the residual stress for further growth of ZnO films, compared with the growth on bulk Si substrates.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si(100) and Si(lll) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.353 degrees. This result is better than the minimum FWHM (about 2 degrees) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(lll).

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively.

Effect of crystallization on the lamellar orientation in thin films of symmetric poly(styrene)-b-poly(L-lactide) diblock copolymer

The effect of crystallization on the lamellar orientation of poly( styrene)-b-poly(L-lactide) (PS-PLLA) semicrystalline diblock copolymer in thin films has been investigated by atomic force microscopy (AFM), transmission electronic microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). In the melt state, microphase separation leads to a symmetric wetting structure with PLLA blocks located at both polymer/substrate and polymer/air interfaces. The lamellar period is equal to the long period L in bulk determined by small-angle X-ray scattering (SAXS). Symmetric wetting structure formed in the melt state provides a model structure to study the crystallization of PLLA monolayer tethered on glassy (T-c < T-g,T-PS) or rubber (T-c > T-g,T-PS) PS substrate. In both cases, it is found that the crystallization of PLLA results in a "sandwich" structure with amorphous PS layer located at both folding surfaces. For T-c <= T-g,T- PS, the crystallization induces a transition of the lamellar orientation from parallel to perpendicular to substrate in between and front of the crystals. In addition, the depletion of materials around the crystals leads to the formation of holes of 1/2 L, leaving the adsorbed monolayer exposure at the bottom of the holes.

Orientation and electrocatalysis of riboflavin adsorbed on carbon substrate surfaces

Based on scanning tunnelling microscopy and electrochemical measurements, orientation and electrocatalytic function of riboflavin adsorbed on carbon substrates have been described for the first time. Scanning tunnelling micrographs show clearly that tip induction may result in an orientation change of the adsorbed riboflavin molecule on highly oriented pyrolytic graphite from the initially vertical orientation to the stable flat form. The adsorbed riboflavin as an effective mediator can accelerate the reduction of dioxygen which accepts two electrons from the reduced riboflavin to generate hydrogen peroxide. The rate constants of the electrocatalytic reaction in various pH solutions were determined using a rotating disc electrode modified with riboflavin. The pH effect and possible catalytic mechanism are discussed in detail.

INVESTIGATION OF CETYLPYRIDINIUM BROMIDE ADSORPTION AT A GLASSY-CARBON ELECTRODE SURFACE BY SPECTROELECTROCHEMISTRY WITH A LONG OPTICAL-PATH LENGTH THIN-LAYER CELL

The adsorption of cationic surfactant cetylpyridinium bromide (CPB) on a glassy carbon (GC) electrode surface has been studied by spectroelectrochemistry with a long optical path length thin-layer cell (LOPTLC) for the first time. A fine adsorption isotherm of CPB molecules from an aqueous solution containing 0.10 M KBr has been obtained over the range of (1.00-8.00) x 10(-5) M. From theoretical calculation and experimental data, adsorption of CPB on the GC electrode surface shows four distinct orientations and three large orientation transitions. Compared with the ordinary isotherm, the differential isotherm is more characteristic and would be suitable for the study of orientation transitions of organic compounds. With a theoretical treatment of the adsorption isotherm, four orientations of adsorbed CPB on a GC electrode surface coincide with the Frumkin-Langmuir type. From adsorption parameters the Frumkin-Langmuir equations, the adsorption free energy and, therefore, the equilibrium constants of orientation transitions of the CPB molecule can be obtained.

The preparation of highly ordered single layer ZSM-5 coating on prefabricated stainless steel microchannels

An elegant way to prepare catalytically active microreactors is by applying a coating of zeolite crystals onto a metal microchannel structure. In this study the hydrothermal formation of ZSM-5 zeolitic coatings on AISI 316 stainless steel plates with a microchannel structure has been investigated at different synthesis mixture compositions. The procedures of coating and thermal treatment have also been optimized. Obtaining a uniform thickness of the coating within 0.5 mm wide microchannels requires a careful control of various synthesis variables. The role of these factors and the problems in the synthesis of these zeolitic coatings are discussed. In general, the synthesis is most sensitive to the H2O/Si ratio as well as to the orientation of the plates with respect to the gravity vector. Ratios of H2O/Si=130 and Si/template=13 were found to be optimal for the formation of a zeolitic film with a thickness of one crystal at a temperature of 130 degreesC and a synthesis time of about 35 h. At such conditions, ZSM-5 crystals were formed with a typical size of 1.5 mu mx1.5 mu mx1.0 mum and a very narrow (within 0.2 mum) crystal size distribution. The prepared samples proved to be active in the selective catalytic reduction (SCR) of NO with ammonia. The activity tests have been carried out in a plate-type microreactor. The microreactor shows no mass transfer limitations and a larger SCR reaction rate is observed in comparison with pelletized Ce-ZSM-5 catalysts; (C) 2001 Elsevier Science B.V. All rights reserved.

Magnetic Characteristics of a High-layer-number NiFe/FeMn Multilayer

We report the static & dynamic magnetic characteristics of a high-layer-number NiFe/FeMn multilayer test structure with potential applications in broadband absorber and filter devices. To allow fine control over the absorption linewidths and to understand the mechanisms governing the resonances in a tailored structure similar to that expected to be used in real world applications, the multilayer was intentionally designed to have layer thickness and interface roughness variations. Magnetometry measurements show the sample has complex hysteresis loops with features consistent with single ferromagnetic film reversals. Structural characterisation by transmission electron microscopy allows us to correlate the magnetic properties with structural features. Analysis of resonance frequencies from broadband ferromagnetic resonance measurements as a function of field magnitude and orientation provide values of the local exchange bias, rotatable anisotropy, and uniaxial anisotropy fields for specific layers in the stack and explain the observed mode softening. The linewidths of the multilayer are adjustable around the bias field, approaching twice that seen at larger fields, allowing control over the bandwidth of devices formed from the structure.

Adsorption, orientation and thermal decomposition of copper(II) hexafluoroacetylacetonate on rutile TiO2(110)

We have investigated the adsorption and thermal decomposition of copper hexafluoroacetylacetonate (Cu-11(hfaC)(2)) on single crystal rutile TiO2(110). Low energy electron diffraction shows that room temperature saturation coverage of the Cu-II(hfac)(2) adsorbate forms an ordered (2 x 1) over-layer. X-ray and ultra-violet photoemission spectroscopy of the saturated surface were recorded as the sample was annealed in a sequential manner to reveal decomposition pathways. The results show that the molecule dissociatively adsorbs by detachment of one of the two ligands to form hfac and Cu-1(hfac) which chemisorb to the substrate at 298 K. These ligands only begin to decompose once the surface temperature exceeds 473 K where Cu core level shifts indicate metallisation. This reduction from Cu(I) to Cu(0) takes place in the absence of an external reducing agent and without disproportionation and is accompanied by the onset of decomposition of the hfac ligands. Finally, C K-edge near edge X-ray absorption fine structure experiments indicate that both the ligands adsorb aligned in the < 001 > direction and we propose a model in which the hfac ligands adsorb on the 5-fold coordinated Ti atoms and the Cu-1(hfac) moiety attaches to the bridging O atoms in a square planar geometry. The calculated tilt angle for these combined geometries is approximately 10 degrees to the surface normal.