First demonstration of a full C-band tunable WDM-PON system with novel high-temperature DS-DBR lasers

We demonstrate automatic operation of a cooler-less tunable-laser based WDM-PON system. Using a pilot-tone based overhead channel and centralized wavelength locking scheme, 1 Gb/s and 10 Gb/s data transmission is demonstrated in a multi-user set-up. © 2013 Optical Society of America.

波长可调谐DBR激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

波长可调谐电吸收调制DBR激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

与标准集成电路工艺兼容的硅基DBR激光器及其工艺

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

Narrow-Linewidth Microwave Generation Using a Self-Injected DBR Laser Diode

A novel technique for generating narrow-linewidth microwave or millimeter-wave signals is proposed. In this scheme, a delayed self-injected distributed Bragg reflector laser diode, which is tuned by a low-frequency square-wave voltage, is used to generate two correlated lightwaves simultaneously. Experiments show that the 10-dB linewidth of generated microwave signals is reduced from 147 MHz to 68 kHz utilizing the proposed self-injection technique.

Optical characteristics of DBR with inhomogeneous graded interfaces

Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

数值分析渐变DBR对垂直腔面发射激光器谐振腔模的影响

通过数值分析研究了含线性渐变层的Al_(0.9)Ga_(0.1)As/Al_yGa_(1-y)As/GaAs/Al_xGa_(1-x)As DBR的光学特性及其对VCSEL谐振腔光学特性的影响,建立了渐变型DBR渐变层厚度与折射率的关系,通过特征矩阵法计算了突变GaAs/Al_(0.9)Ga_(0.1)As DBR和渐变型DBR的反射谱和反射相移,分析了渐变层对DBR反射率和反射相移的影响.对渐变型DBR,要使VCSEL谐振腔满足中心波长相位匹配条件,还需要在DBR靠近谐振腔一侧的最前面增加一定厚度的渐变层,称为相位匹配层.通过计算,我们得到了使VCSEL谐振腔满足相位匹配条件时均匀层和相位匹配层的厚度.

具有非均匀渐变界面DBR的光学特性分析

应用特征矩阵法研究了非均匀渐变界面Al_(0.9)Ga_(0.1)As/AlyGa_(1-y)As/GaAs/Al_xGa_(1-x)As DBR的光学特性.建立了非均匀渐变界面AlyGa1-yAs的折射率模型，并得到了渐变界面特征矩阵的解析解，通过特征矩阵法分别计算了突变GaAs/Al_(0.9)Ga_(0.1)As DBR和渐变DBR的反射谱和反射相移，分析了非均匀渐变层对DBR光学特性的影响，对渐变DBR，需要在DBR前面再增加一定厚度的非均匀渐变相位匹配层才能使整个DBR满足中心波长相位匹配条件，并通过光学厚度近似方法求出相位匹配层厚度.

A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

Widely Tunable Sampled-Grating DBR Laser

The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing process. The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.

垂直腔面发射激光器DBR结构反射特性分析

采用等效法布里-珀罗(F-P)腔方法对垂直腔面发射激光器(VCSEL)的上、下两层分布布喇格反射(DBR)结构的特性进行了研究，计算并讨论了上、下两层DBR结构在不同对称模型、不同周期数时对微腔结构的反射率的影响。得出 反射面DBR结构的周期数为30左右，出光面DBR结构的周期数20左右，易实现激光输出，与实际设计基本一致。

GaAs、AlAs、DBR反应离子刻蚀速率的研究

采用BCl_3和Ar作为刻蚀气体对GaAs、AlAs、DBR反应离子刻蚀的速率进行了研究，通过控制反应的压强、功率、气体流量和气体组分达到对刻蚀速率的控制。实验结果表明