Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

We report on room temperature laser actions of a novel thulium-doped crystal Tm center dot Lu2SiO5 (LSO) under diode pumping. An optical optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous wave (CW) output power of 0.67 W. The emission wavelengths of Tm LSO laser were centered at 2058.4 nm with bandwidth of similar to 13.6 nm.

Diode-pumped continuous wave and Q-switched operation of a c-cut Tm,Ho:YAlO3 laser

We report on a diode-pumped, cryogenic and room temperature operation of a Tm,Ho:YAlO3 (c-cut) laser. In a temperature of 77 K, an optical-optical conversion efficiency of 27% and a slope efficiency of 29% were achieved with the maximum continuous-wave (CW) output power of 5.0 W at 2.13 mu m. Acousto-optic switched operation was performed at pulse repetition frequency (PRF) from 1 kHz to 10 kHz, the highest pulse energy of 3.3 mJ in a pulse duration of 40 ns was obtained. In room temperature (RT), the maximum CW power of Tm,Ho:YAlO3 laser was 160 mW with a slope efficiency of 11% corresponding to the absorbed pump power. (C) 2008 Optical Society of America.

532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM

We obtained continuous wave mode-locked Nd-GdVO4-KTP laser with a SESAM. This is the first report of CW mode-locked Nd GdVO4-KTP laser with a SESAM to our knowledge. 396mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is assumed to be 5.5 ps, this is the shortest green pulse of 532 nm with SESAM. (c) 2009 by Astro Ltd. Published exclusively by WLLEY-VCH Verlag GmbH & Co. KGaA

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

End-pumped continuous-wave passively modelocked Nd : YVO4 laser with low pump power

A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

Continuous-wave ultraviolet light induced fiber Bragg gratings in few- and single-mode microstructured polymer optical fibers

Reported are observations and measurements of the inscription of fibre Bragg gratings in two different types of microstructured polymer optical fibre: few-moded and endlessly single mode. Contrary to FBG inscription in silica microstructured fibre, where high energy laser pulses are a prerequisite, we have successfully used a low power CW laser source operating at 325nm to produce 1-cm long gratings with a reflection peak at 1570 nm. Peak reflectivities of more than 10% have been observed.

Continuous wave ultraviolet light-induced fiber Bragg gratings in few- And single-mode microstructured polymer optical fibers

We report observations and measurements of the inscription of fiber Bragg gratings (FBGs) in two different types of microstructured polymer optical fiber: few-mode and an endlessly single mode. Contrary to the FBG inscription in silica microstructured fiber, where high-energy laser pulses are a prerequisite, we have successfully used a low-power cw laser source operating at 325 nm to produce 1 cm long gratings with a reflection peak at 1570 nm. Peak reflectivities of more than 10% have been observed. © 2005 Optical Society of America.

Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs. © 2013 AIP Publishing LLC.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Passive mode locking of a diode-end-pumped Nd : GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror. (C) 2003 Optical Society of America.

Two different operation regimes of fiber laser based on nonlinear polarization rotation : passive mode-locking and multiwavelength emission

We have proposed and demonstrated a nonlinear polarization-rotation-based fiber laser with two different operation states: passive mode-locking and multiwavelength emission. The intensity-dependent transmission or loss induced by nonlinear polarization rotation accounts for the distinct operation regimes. Our experiment results indicate that both passively mode-locked pulses and continuous-wave multiwavelength can be generated from the same fiber laser just through adjusting polarizations. Another characteristic of the current multiwavelength laser is that the used periodic filter is a birefringence fiber filter, which facilitates all-fiber integration of the fiber laser, so it is a potential multifunction laser source with all-fiber configuration and convenient manipulation. © 2008 IEEE.