Correlation between the surface morphology and structure and the photoluminescence of amorphous PbTiO3 thin films obtained by the chemical route

A polymeric precursor method was used to synthesis PbTiO3 amorphous thin film processed at low temperature. The luminescence spectra of PbTiO3 amorphous thin films at room temperature revealed an intense single-emission band in the visible region, the visible emission band was found to be dependent on the thermal treatment history, Photoluminescence properties Versus different annealing temperatures were investigated. The experimental results (XRD, AFM, FL) indicate that the nature of photoluminescence (PL) must be related to the disordered structure of PbTiO3 amorphous thin films, Copyright (C) 2000 John Wiley & Sons, Ltd.

Anodic oxidation of formaldehyde on Pt-modified SnO2 thin film electrodes prepared by a sol-gel method

Pt-modified SnO2 electrodes were prepared onto titanium substrates in the form of thin films of similar to2 mum at different temperatures in the range from 200 to 400degreesC. Surface morphology was examined by scanning electron microscopy (SEM). It was found that Pt-SnO2 sol-gel layers are significantly rough and have a low porosity. X-ray diffraction (XRD) studies showed that the films consist of Pt nanoparticles with average size varying from about 5 to 10 nm, depending on the preparation temperature, and amorphous tin oxide. X-ray photoelectron spectroscopy (XPS) was employed to determine the superficial composition of the electrodes and demonstrated the presence of Sn4+ in all the samples. XPS spectra of the Pt 4f electrons showed the presence of Pt in the zero-valence state as well as in ionic forms. The general electrochemical behavior was characterized by cyclic voltammetry in 1 mol l(-1) HClO4 and the electrocatalytic activity towards the oxidation of formaldehyde was investigated by potential sweeps and chronoamperometry. The results obtained show that the Pt-SnO2/Ti system exhibits a significant catalytic activity for the oxidation of formaldehyde, with an onset potential below 0.1 V. (C) 2004 Elsevier Ltd. All rights reserved.

HMDSO plasma polymerization and thin film optical properties

Thin films were deposited from hexamethyldisiloxane (HMDSO) in a glow discharge supplied with radiofrequency (rf) power. Actino-metric optical emission spectroscopy was used to follow trends in the plasma concentrations of the species SiH (414.2 nm), CH (431.4 nm), CO (520.0 nm), and H (656.3 nm) as a function of the applied rf power (range 5 to 35 W). Transmission infrared spectroscopy (IRS) was employed to characterize the molecular structure of the polymer, showing the presence of Si-H, Si-O-Si, Si-O-C and C-H groups. The deposition rate, determined by optical interferometry, ranged from 60 to 130 nm/min. Optical properties were determined from transmission ultra violet-visible spectroscopy (UVS) data. The absorption coefficient α, the refractive index n, and the optical gap E04 of the polymer films were calculated as a function of the applied power. The refractive index at a photon energy of 1 eV varied from 1.45 to 1.55, depending on the rf power used for the deposition. The absorption coefficient showed an absorption edge similar to other non-crystalline materials, amorphous hydrogenated carbon, and semiconductors. For our samples, we define as an optical gap, the photon energy E04 corresponding to the energy at an absorption of 104 cm-1. The values of E04 decreased from 5.3 to 4.6 as the rf power was increased from 5 to 35 W. © 1995.

Tetraethylortossilicate plasma thin film with hydrophilic and hydrophobic characteristics: Use on passive mixers

This work aims to obtain plasma thin film composites with hydrophobic/hydrophilic alternated regions, which are useful for the production of miniaturized mixers. These regions were acquired by two different strategies: either the codeposition of TEOS and HFE plasma thin films or the exposition of TEOS plasma films to ultraviolet radiation (UVA and UVC). These films were characterized by several chemical and physical techniques. The refractive indexes vary from 1.4 to 1.7; infrared and photoelectron spectroscopy detect Si-O-Si and CHn species. Silicone-like structures with high or low number of amorphous carbon microparticles and with fluorinated organic clusters were produced. Cluster dimensions were in the 1-5 mm range and they are made of graphite or COF (carbon/oxygen/fluorine) compounds. Scanning electron and optical microscopy showed rough surfaces. Water contact angles were 90º; however, for TEOS films that value changed after 6 hr of UVC exposure. Moreover, after UV exposure, organic polar compounds could be adsorbed in those films and water was not. The passive mixer performance was simulated using the FemLab 3.2® program and was tested with 20 nm thick films on a silicon wafer, showing the capacity of these films to be used in such devices.

Practical issues for testing thin film PV modules at standard test conditions.

Thin film photovoltaic (TF) modules have gained importance in the photovoltaic (PV) market. New PV plants increasingly use TF technologies. In order to have a reliable sample of a PV module population, a huge number of modules must be measured. There is a big variety of materials used in TF technology. Some of these modules are made of amorphous or microcrystalline silicon. Other are made of CIS or CdTe. Not all these materials respond the same under standard test conditions (STC) of power measurement. Power rates of the modules may vary depending on both the extent and the history of sunlight exposure. Thus, it is necessary a testing method adapted to each TF technology. This test must guarantee repeatability of measurements of generated power. This paper shows responses of different commercial TF PV modules to sunlight exposure. Several test procedures were performed in order to find the best methodology to obtain measurements of TF PV modules at STC in the easiest way. A methodology for indoor measurements adapted to these technologies is described.

Direct laser writing of a channel waveguide in Al2O3:Nd thin film

The femtosecond laser modification of refractive index in amorphous Al2O3:Nd thin film prepared by rf magnetron sputtering is investigated. Modifications of the refractive index in a sample with a single Al2O3:Nd layer and in a sample composed of the Al2O3:Nd layer and SiO2 layer on the top were compared. Advantages arising from addition of the SiO2 layer are shown. The film was patterned in order to form an active waveguide. Waveguide loss and mode composition were investigated experimentally and theoretically. Spectrum and kinetics of luminescence in the region of 1.06 μm were measured.

Ordered mesoporous titanium oxide for thin film microbatteries with enhanced lithium storage

A 3D mesoporous TiO2 material with well-developed mesostructure is prepared in the form of a binder-free thin (100 nm) film and studied as potential candidate for the negative electrode in lithium microbatteries. By appropriate thermal treatments, the selected crystal structure (anatase, rutile, or amorphous), and micro-/mesostructure of the materials was obtained. The effects of voltage window and prelithiation treatment improved first cycle reversibility up to 86% and capacity retention of 90% over 100 cycles. After a prolonged intercalation of lithium ions in ordered mesoporous TiO2 appeared small particles assigned to Li2Ti2O4 with cubic structure as observed from ex-situ TEM micrographs. This study highlights the flexibility of the potential window to which the electrode can operate. Maximum capacity values over 100 cycles of 470 μA h cm−2 μm−1 and 177 μA h cm−2 μm−1 are obtained for voltage ranges of 0.1–2.6 V and 1.0–2.6 V, respectively. The observed values are between 6 and 2 times higher than those obtained for films with 600 nm (80 μA h cm−2 μm−1) and 900 nm (92 μA h cm−2 μm−1) lengths. This indicates that 100 nm thin TiO2 films with high accessibility show finite-length type diffusion which is interesting for this particular application.

Bias-induced threshold voltages shifts in thin-film organic transistors

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics.

Sensorless synchronization method for thin-film direct optical broadband monitoring system

Optical monitoring systems are necessary to manufacture multilayer thin-film optical filters with low tolerance on spectrum specification. Furthermore, to have better accuracy on the measurement of film thickness, direct monitoring is a must. Direct monitoring implies acquiring spectrum data from the optical component undergoing the film deposition itself, in real time. In making film depositions on surfaces of optical components, the high vacuum evaporator chamber is the most popular equipment. Inside the evaporator, at the top of the chamber, there is a metallic support with several holes where the optical components are assembled. This metallic support has rotary motion to promote film homogenization. To acquire a measurement of the spectrum of the film in deposition, it is necessary to pass a light beam through a glass witness undergoing the film deposition process, and collect a sample of the light beam using a spectrometer. As both the light beam and the light collector are stationary, a synchronization system is required to identify the moment at which the optical component passes through the light beam.

Corrosion resistant and adsorbent plasma polymerized thin film

Adsorbent and corrosion resistant films are useful for sensor development. Therefore, the aim of this work is the production and characterization of plasma polymerized fluorinated organic ether thin films for sensor development. The polymerized reactant was methyl nonafluoro(iso)butyl ether. Infrared Spectroscopy showed fluorinated species and eventually CO but CH(n) is a minor species. Contact angle measurements indicated that the film is hydrophobic and organophilic but oleophobic. Optical microscopy reveals not only a good adherence on metals and acrylic but also resistance for organic solvents, acid and basic aqueous solution exposure. Double layer and intermixing are possible and might lead to island formation. Quartz Crystal Microbalance showed that 2-propanol permeates the film but there is no sensitivity to n-hexane. The microreactor manufactured using a 73 cm long microchannel can retain approximately 9 X 10(-4) g/cm(2) of 2-propanol in vapor phase. Therefore, the film is a good candidate for preconcentration of volatile organic compounds even in corrosive environment. (C) 2009 Elsevier B.V. All rights reserved.

Single step process for particles surface modification or thin film composite production

Adsorbent materials and composites are quite useful for sensor development. Therefore, the aim of this work is the surface modification of particulates and/or composite formation. The material was produced by plasma polymerization of HMDS (hexamethyldisilazane) in a single step. SEM analysis shows good surface coverage of particulates with a plasma polymerized film formed by several clusters that might increase adsorption. Particles (starch. 5 5 mu m) recovered with HMDS films show good properties for retention of medium-size Organic molecules, such as dye. Thin films formed by a mixture of particles and plasma polymerized thin film HMDS species were obtained in a single step and can be used for retention of organic compounds, in liquid or gaseous phase. (C) 2009 Elsevier B.V. All rights reserved.

Production and characterization of RF-sputtered PbO-GeO(2) amorphous thin films containing silver and gold nanoparticles

In the present work we report the characterization of PbO-GeO(2) films containing silver nanoparticles (NPs). Radio Frequency (RF) co-sputtering was used for deposition of amorphous films on glass substrates. Targets of 60PbO-40GeO(2) (in wt%) and bulk silver with purity of 99.99% were RF-sputtered using 3.5 m Torr of argon. The concentration of silver and gold NPs in the films was controlled varying the RF-power applied to the targets (40-50W for the PbO-GeO(2) target; 6-8 W for the metallic target). The films obtained were annealed in air at different temperatures and various periods of time. Absorption measurements have shown strong NPs surface plasmon bands. Different widths and peak wavelengths were observed, indicating that size, shape and distribution of the silver NPs are dependent on the deposition process parameters and on the annealing of the samples. X-Ray Fluorescence and Transmission Electron Microscopy were also used to characterize the samples. (C) 2010 Elsevier B.V. All rights reserved.

Influence of gold nanoparticles on optically stimulated effects in TeO(2)-ZnO and GeO(2)-PbO amorphous thin films

We have found photoinduced second harmonic generation at wavelength 1064 nm during bicolor Nd:YAG laser coherent treatment of TeO(2)-ZnO and GeO(2)-PbO amorphous films. The maximally achieved second order susceptibility was equal to about 1.02 pm/V. Correlation of the induced second order susceptibility with local sample heating and induced birefringence may indicate an occurrence of local phase transitions from amorphous glass-like phase to non-centrosymmetry metastable phases. (C) 2010 Elsevier B.V. All rights reserved.

Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

Photodetector with integrated optical thin film filters

This paper reports on optical filters based on a-SiC:H tandem pi'n/pin heterostructures. The spectral sensitivity is analyzed. Steady state optical bias with different wavelengths are applied from each front and back sides and the photocurrent is measured. Results show that it is possible to control the sensitivity of the device and to tune a specific wavelength range by combining radiations with complementary light penetration depths. The transfer characteristics effects due to changes in the front and back optical bias wavelength are discussed. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels.