Blue-enhanced thin-film photodiode for dual-screen x-ray imaging


Autoria(s): Vygranenko, Yuri; Sazonov, A.; Heiler, G.; Tredwell, T.; Vieira, Maria Manuela Almeida Carvalho; Nathan, Arokia
Data(s)

12/03/2012

12/03/2012

28/12/2009

Resumo

This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

Identificador

Vygranenko Y, Sazonov A, Heiler G, Tredwell T, Vieira M, Nathan A. Blue-enhanced thin-film photodiode for dual-screen x-ray imaging.Applied Physics Letters. 2009; 95 (26): Art. No. 26350.

0003-6951

http://hdl.handle.net/10400.21/1268

Idioma(s)

eng

Publicador

Amer Inst Physics

Relação

26; 26350

Direitos

restrictedAccess

Palavras-Chave #Current density #p-i-n photodiodes #Thin films #X-ray imaging
Tipo

article