Blue-enhanced thin-film photodiode for dual-screen x-ray imaging
Data(s) |
12/03/2012
12/03/2012
28/12/2009
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Resumo |
This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode. |
Identificador |
Vygranenko Y, Sazonov A, Heiler G, Tredwell T, Vieira M, Nathan A. Blue-enhanced thin-film photodiode for dual-screen x-ray imaging.Applied Physics Letters. 2009; 95 (26): Art. No. 26350. 0003-6951 |
Idioma(s) |
eng |
Publicador |
Amer Inst Physics |
Relação |
26; 26350 |
Direitos |
restrictedAccess |
Palavras-Chave | #Current density #p-i-n photodiodes #Thin films #X-ray imaging |
Tipo |
article |