Photoionization cross section calculations for the halogen-like ions Kr + and Xe +

Photoionization cross section calculations on the halogen-like ions; Kr + and Xe + have been performed for a photon energy range from each ion threshold to 15 eV, using large-scale close-coupling calculations within the Dirac--Coulomb R -matrix approximation. The results from our theoretical work are compared with recent measurements made at the ASTRID merged-beam set-up at the University of Aarhus in Denmark and from the Fourier transform ion cyclotron resonance trap method at the SOLEIL synchrotron radiation facility in Saint-Aubin, France Bizau et al (2011 J. Phys. B: At. Mol. Opt. Phys. 44 055205) and the advanced light source M{ü}ller (2012 private communication), Aguliar et al (2012 J. Phys.: Conf. Ser . at press). For each of these complex ions our theoretical cross section results over the photon energy range investigated are seen to be in excellent agreement with experiment. Resonance energy positions and quantum defects of the prominent Rydberg resonances series identified in the spectra are compared with experiment for these complex halogen-like ions.

Estimation Of Properties Of Rare-Gas Solids From Compression Characteristics Of Closed-Shell Ions

We present a unified approach to repulsion in ionic and van der Waals solids based on a compressible-ion/atom model. Earlier studies have shown that repulsion in ionic crystals can be viewed as arising from the compression energy of ions, described by two parameters per ion. Here we obtain the compression parameters of the rare-gas atoms Ne. Ar. Kr and Xe by interpolation using the known parameters of related equi-electronic ions (e.g. Ar from S2-. Cl-, K- and Ca2-). These parameters fit the experimental zero-temperature interatomic distances and compressibilities of the rare-gas crystals satisfactorily. A hightemperature equation of state based on an Einstein model of thermal motions is used to calculate the thermal expansivities, compressibilities and their temperature derivatives for Ar. Kr and Xe. It is argued that an instability at higher temperatures represents the limit to which the solid can be superheated. beyond which sublimation must occur.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Sputtering by multiply-charged ions, and preferential sputtering of isotopic mixtures

Collector-type experiments have been conducted to investigate two different aspects of sputtering induced by keV ions. The first study looked for possible ejection mechanisms related to the primary charge state of the projectile. Targets of CsI and LiNbO_3 were bombarded with 48 keV Ar^(q+), and a Au target was bombarded with 60 keV Ar^(q+), for q = 4, 8, and 11. The collectors were analyzed using heavy-ion Rutherford backscattering spectroscopy to determine the differential angular sputtering yields; these and the corresponding total yields were examined for variations as a function of projectile charge state. For the Au target, no significant changes were seen, but for the insulating targets slight (~10%) enhancements were observed in the total yields as the projectile charge state was increased from 4+ to 11+.

In the second investigation, artificial ^(92)Mo/^(100)Mo targets were bombarded with 5 and 10 keV beams of Ar^+ and Xe^+ to study the isotopic fractionation of sputtered neutrals as a function of emission angle and projectile fluence. Using secondary ion mass spectroscopy to measure the isotope ratio on the collectors, material ejected into normal directions at low bombarding fluences (~ 10^(15) ions cm^(-2)) was found to be enriched in the light isotope by as much as ~70‰ compared to steady state. Similar results were found for secondary Mo ions sputtered by 14.5 keV O^-. For low-fluence 5 keV Xe^+ bombardment, the light-isotope enrichment at oblique angles was ~20‰ less than the corresponding enrichment in the normal direction. No angular dependence could be resolved for 5 keV Ar^+ projectiles at the lowest fluence. The above fractionation decreased to steady-state values after bombarding fluences of a few times 10^(16) ions cm^(-2) , with the angular dependence becoming more pronounced. The fractionation and total sputtering yield were found to be strongly correlated, indicating that the above effects may have been related to the presence of a modified target surface layer. The observed effects are consistent with other secondary ion measurements and multiple-interaction computer simulations, and are considerably larger than predicted by existing analytic theory.

X-ray spectra induced by Xe-129(q+) impacting the metal surface

Using the slow highly charged ions Xe-129(q+) (q = 25, 26, 27; initial kinetic T-0 <= 4.65 keV/a.u.) to impact Au surface, the Au atomic M alpha characteristic X-ray spectrum is induced. The result shows that as long as the charge state of projectile is high enough, the heavy atomic characteristic X-ray can be effectively excited even though the incident beam is very weak (nA magnitude), and the X-ray yield per ion is in the order of 10(-8) and increases with the kinetic energy and potential energy of projectile. By measuring the Au M alpha-X-ray spectra, Au atomic N-level lifetime is estimated at about 1.33x10(-18) s based on Heisenberg uncertainty relation.

X-ray emission of hollow atoms formed by highly charged argon and xenon ions below a beryllium surface

The X-ray emission induced by highly charged argon and xenon ions impinging on a beryllium surface is investigated. It is found that spectra of the X-ray induced by Ar-17,Ar-18+ interacting with the surface are very different from those of the X-ray induced by Ar-17,Ar-18+ interacting with residual gases. The result provides an experimental evidence for the existence of hollow atoms below the surface. Several unexpected X-ray lines are also found in the experiment. Firstly, K X-rays are observed when Ar16+ ions which initially have no K shell holes interact with the surface. Secondly, if there are more than 2 M shell vacancies at the initial time, strong M alpha alpha two-electron-one-photon (TEOP) transitions are found in the collisions of Xe-28+,Xe-29+,Xe-30+ ions with the surface.

Color center formation in alpha-Al2O3 induced by high energy heavy ions

Single crystals of alpha-alumina were irradiated at room temperature with 1.157 (GeVFe)-Fe-56, 1.755 (GeVXe)-Xe-136 and 2.636 (GeVU)-U-238 ions to fluences range from 8.7 x 10(9) to 6 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet visible absorption measurements. The investigation reveals the presence of various color centers (F, F+, F-2(2+), F-2(+) and F-2 centers) appearing in the irradiated samples. It is found that the ratio of peak absorbance of F-2 to F centers increases with the increase of the atomic numbers of the incident ions from Fe, Xe to U ions, so do the absorbance ratio of F-2(2+) to F+ centers and of large defect cluster to F centers, indicating that larger defect clusters are preferred to be produced under heavier ion irradiation. Largest color center production cross-section was found for the U ion irradiation. The number density of single anion vacancy scales better with the energy deposition through processes of nuclear stopping, indicating that the nuclear energy loss processes determines the production of F-type defects in heavy ion irradiated alpha-alumina.

X-ray spectrum emitted by the impact of Xe-129(q+) on Mo surface

We studied the characteristic X-ray spectra produced by the interaction of highly charged ions of X-129(q+) (q =25, 26, 27) with surface of metallic Mo. The experimental result shows that highly charged ions can excite the characteristic X-ray spectra of L-shell of Mo when the beam' s intensity is not more than 120 nA. The X-ray yield of single ion reaches a quantitative level of 10(-8) and increases with the increment of the ion' s kinetic energy and ionic charge (potential energy). By measuring the X-ray spectra of Mo-L alpha(1) the M-level lifetime of Mo atom is estimated by using Heisenberg uncertainty relation.

Multiple ionization of ions and atoms by intense ultrafast laser pulses

Non-sequential processes in the multiple ionization of Xe and Xe+ targets subject to intense femtosecond laser pulses have been investigated. A precise ratio has been determined for the direct comparison of ionization using circular and linear polarized fields. Suppression of non-sequential effects where an ionic target is compared to a neutral atom target has been confirmed.

Probing confinement resonances by photoionizing Xe inside a C60+ molecular cage

Double photoionization accompanied by loss of n C atoms (n=0, 2, 4, 6) was investigated by merging beams of Xe@C60+ ions and synchrotron radiation and measuring the yields of product ions. The giant 4d dipole resonance of the caged Xe atom has a prominent signature in the cross section for these product channels, which together account for 6.2 ± 1.4 of the total Xe 4d oscillator strength of 10. Compared to that for a free Xe atom, the oscillator strength is redistributed in photon energy due to multipath interference of outgoing Xe 4d photoelectron waves that may be transmitted or reflected by the spherical C60+ molecular cage, yielding so-called confinement resonances. The data are compared with an earlier measurement and with theoretical predictions for this single-molecule photoelectron interferometer system. Relativistic R-matrix calculations for the Xe atom in a spherical potential shell representing the fullerene cage show the sensitivity of the interference pattern to the molecular geometry. © 2013 American Physical Society.

Optical emission and electron capture of rare-earth trivalent ions located at distinct sites in SnO(2) thin films

We present photoluminescence and decay of photo excited conductivity data for sol-gel SnO(2) thin films doped with rare earth ions Eu(3+) and Er(3+), a material with nanoscopic crystallites. Photoluminescence spectra are obtained under excitation with several monochromatic light sources, such as Kr(+) and Ar(+) lasers, Xe lamp plus a selective monochromator with UV grating, and the fourth harmonic of a Nd: YAG laser (4.65eV), which assures band-to-band transition and energy transfer to the ion located at matrix sites, substitutional to Sn(4+). The luminescence structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at grain boundary layer, where it is placed in asymmetric sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference between capture energy and grain boundary barrier is not so evident, even though the luminescence spectra are rather distinct.

Optical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2

Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.

Reactions of atomic and molecular ions with acetone, 1,1,1- trifluoroacetone, and hexafluoroacetone: An investigation of the effects of molecular structure on the dynamics and kinetics of ion-molecule reactions

A selected ion flow tube study of the reactions of a series of gas-phase atomic cations (S⁺, Xe⁺, O⁺, Kr⁺, N⁺, Ar⁺ and Ne⁺) and molecular ions (SF _n⁺ (n = 1-5), CF_n⁺ (n = 1-3), CF₂Cl⁺, H₃O⁺, NO⁺, N ₂O⁺, CO₂⁺, CO⁺, and N₂⁺) spanning a large range of recombination energies (6.3-21.6 eV), with acetone, 1,1,1-trifluoroacetone, and hexafluoroacetone has been undertaken with the objective of exploring the nature of the reaction ion chemistry as the methyl groups in acetone are substituted for CF₃. The reaction rate coefficients and product ion branching ratios for all 66 reactions, measured at 298 K, are reported. The experimental reaction rate coefficients are compared to theoretically calculated collisional values. Several distinct reaction processes were observed among the large number of reactions studied, including charge transfer (non-dissociative and dissociative), abstraction, ion-molecule associations and, in the case of the reactions involving the reagent ion H₃O⁺, proton transfer.