Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer

Ten-period 5.5 nm Si0.75Ge0.25/10.3 nm Si/2.5 nm Si0.5Ge0.5 trilayer asymmetric superlattice was prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The stability of Mach-Zehnder interferometer was improved by utilizing polarization-maintaining fibers. According to the electro-optic responses of the superlattice with the light polarization along [110] and [-110], respectively, both electro-optic coefficients gamma(13) and gamma(63) of such asymmetric superlattice were measured. gamma(13) and gamma(63) are 2.4x10(-11) and 1.3x10(-11) cm/V, respectively, with the incident light wavelength at 1.55 mu m. (c) 2006 American Institute of Physics.

SOI-based 16x16 thermo-optic waveguide switch matrix

A 16 x 16 thermo-optic wavelenght switch matrix has been designed and febricated on silicon-on-insulator wafer. For reducing device lenght, blocking switch matrix configuration is chosen. The building block of a matix is a 2 x 2 cell with Mach-Zehnder interferometer configuration, where a multi-mode interferometer serves as splitters/combiners. Spot size converters and isolating grooves are integrated on the same chip to reduce loss and power consumption. Average power consumption of the switch cell is 220 mW. The switching time of a switch cell is less than 3 mu s.

Fabrication of thermo-optic switch in silicon-on-insulator

Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 mus and the power consumption is about 420 mW The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

Multimode-interference-type thermo-optic variable optical attenuator with a response frequency of 10 kHz

A thermo-optic variable optical attenuator based on a multimode interference coupler principle is fabricated. The propagation loss of the fabricated device is 1.6 to 3.8 dB at the wavelength range 1510 to 1610 nm, which is very near the calculated value (1.2 dB) by the finite difference beam propagation method. The maximum power consumption is 363 mW and the dynamic attenuation range is 0 to 26 dB. The response frequency of the fabricated attenuator is about 10 kHz. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

A low power consumption thermo-optic variable optical attenuator based on SOI material

A SOI thenno-optic variable optical attenuator with U-grooves based on a multimode interference coupler principle is fabricated. The dynamic attenuation range is 0 to 29 dB; at the wavelength range between 1510 nm and 1610nm, and the maximum power consumption is only l30mW. Compared to the variable optical attenuator without U-groove, the maximum power consumption decreases more than 230mW

Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator

A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements，is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between －12 and －19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.

SOI thermo-optic modulator with fast response

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.

Bond-charge calculation of electro-optic coefficients of diatomic crystals

A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.

Simultaneous determination of nonlinear optical and thermo-optic parameters of liquid samples

The authors apply the theory of photothermal lens formation and also that of pure optical nonlinearity to account for the phase modulation in a beam as it traverses a nonlinear medium. It is used to simultaneously determine the nonlinear optical refraction and the thermo-optic coefficient. They demonstrate this technique using some metal phthalocyanines dissolved in dimethyl sulfoxide, irradiated by a Q-switched Nd:YAG laser with 10 Hz repetition rate and a pulse width of 8 ns. The mechanism for reverse saturable absorption in these materials is also discussed.

Thermo- Optic and Nonlinear-Optical studies on CdSe Quantum Dots for Photonic Applications

In general, linear- optic, thermo- optic and nonlinear- optical studies on CdSe QDs based nano uids and their special applications in solar cells and random lasers have been studied in this thesis. Photo acous- tic and thermal lens studies are the two characterization methods used for thermo- optic studies whereas Z- scan method is used for nonlinear- optical charecterization. In all these cases we have selected CdSe QDs based nano uid as potential photonic material and studied the e ect of metal NPs on its properties. Linear optical studies on these materials have been done using vari- ous characterization methods and photo induced studies is one of them. Thermal lens studies on these materials give information about heat transport properties of these materials and their suitability for applica- tions such as coolant and insulators. Photo acoustic studies shows the e ect of light on the absorption energy levels of the materials. We have also observed that these materials can be used as optical limiters in the eld of nonlinear optics. Special applications of these materials have been studied in the eld of solar cell such as QDSSCs, where CdSe QDs act as the sensitizing materials for light harvesting. Random lasers have many applications in the eld of laser technology, in which CdSe QDs act as scattering media for the gain.

Growth, optical characterization, and laser operation of a stoichiometric crystal KYb(WO4)(2)

We present our recent achievements in the growing and optical characterization of KYb(WO4)2 (hereafter KYbW) crystals and demonstrate laser operation in this stoichiometric material. Single crystals of KYbW with optimal crystalline quality have been grown by the top-seeded-solution growth slow-cooling method. The optical anisotropy of this monoclinic crystal has been characterized, locating the tensor of the optical indicatrix and measuring the dispersion of the principal values of the refractive indices as well as the thermo-optic coefficients. Sellmeier equations have been constructed valid in the visible and near-IR spectral range. Raman scattering has been used to determine the phonon energies of KYbW and a simple physical model is applied for classification of the lattice vibration modes. Spectroscopic studies (absorption and emission measurements at room and low temperature) have been carried out in the spectral region near 1 µm characteristic for the ytterbium transition. Energy positions of the Stark sublevels of the ground and the excited state manifolds have been determined and the vibronic substructure has been identified. The intrinsic lifetime of the upper laser level has been measured taking care to suppress the effect of reabsorption and the intrinsic quantum efficiency has been estimated. Lasing has been demonstrated near 1074 nm with 41% slope efficiency at room temperature using a 0.5 mm thin plate of KYbW. This laser material holds great promise for diode pumped high-power lasers, thin disk and waveguide designs as well as for ultrashort (ps/fs) pulse laser systems.

Thermal tunability of photonic bandgaps in photonic crystal fibers selectively filled with nematic liquid crystal

We address the bandgap effect and the thermo-optical response of high-index liquid crystal (LC) infiltrated in photonic crystal fibers (PCF) and in hybrid photonic crystal fibers (HPCF). The PCF and HPCF consist of solid-core microstructured optical fibers with hexagonal lattice of air-holes or holes filled with LC. The HPCF is built from the PCF design by changing its cladding microstructure only in a horizontal central line by including large holes filled with high-index material. The HPCF supports propagating optical modes by two physical effects: the modified total internal reflection (mTIR) and the photonic bandgap (PBG). Nevertheless conventional PCF propagates light by the mTIR effect if holes are filled with low refractive index material or by the bandgap effect if the microstructure of holes is filled with high refractive-index material. The presence of a line of holes with high-index LC determines that low-loss optical propagation only occurs on the bandgap condition. The considered nematic liquid crystal E7 is an anisotropic uniaxial media with large thermo-optic coefficient; consequently temperature changes cause remarkable shifts in the transmission spectrums allowing thermal tunability of the bandgaps. Photonic bandgap guidance and thermally induced changes in the transmission spectrum were numerically investigated by using a computational program based on the beam propagation method. © 2010 SPIE.