Wavelength-tuneable liquid crystal lasers from the visible to the near-infrared

The study of band-edge lasing from dye-doped chiral nematic liquid crystals has thus far been largely restricted to visible wavelengths. In this paper, a wide range of commercially available laser dyes are examined for their suitability as infrared emitters within a chiral nematic host. Problems such as poor solubility and reduced quantum efficiencies are overcome, and successful band-edge lasing is demonstrated within the range of 735-850 nm, using the dyes LD800, HITC-P and DOTC-P. This paper also reports on progress towards widely tuneable liquid crystal lasers, capable of emission in the region 460- 850 nm. Key to this is the use of common pump source, capable of simultaneously exciting all of the dyes (both infrared and visible) that are present within the system. Towards this aim, we successfully demonstrate near-infrared lasing (800 nm) facilitated by Förster energy transfer between the visible dye DCM, and the infra-red dye LD800, enabling pump wavelengths anywhere between 420 and 532 nm to be used. These results demonstrate that small and low-cost tuneable visible to near-infrared laser sources are achievable, using a single common pump source. Such devices are envisaged to have wide-ranging applications including medical imaging (including optical coherence tomography), point-of-care optical medical diagnostics (such as flow cytometry), telecommunications, and optical signatures for security coatings. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Wavelength-tuneable liquid crystal lasers from the visible to the near-infrared

The study of band-edge lasing from dye-doped chiral nematic liquid crystals has thus far been largely restricted to visible wavelengths. In this paper, a wide range of commercially available laser dyes are examined for their suitability as infrared emitters within a chiral nematic host. Problems such as poor solubility and reduced quantum efficiencies are overcome, and successful band-edge lasing is demonstrated within the range of 735-850 nm, using the dyes LD800, HITC-P and DOTC-P. This paper also reports on progress towards widely tuneable liquid crystal lasers, capable of emission in the region 460- 850 nm. Key to this is the use of common pump source, capable of simultaneously exciting all of the dyes (both infrared and visible) that are present within the system. Towards this aim, we successfully demonstrate near-infrared lasing (800 nm) facilitated by Förster energy transfer between the visible dye DCM, and the infra-red dye LD800, enabling pump wavelengths anywhere between 420 and 532 nm to be used. These results demonstrate that small and low-cost tuneable visible to near-infrared laser sources are achievable, using a single common pump source. Such devices are envisaged to have wide-ranging applications including medical imaging (including optical coherence tomography), point-of-care optical medical diagnostics (such as flow cytometry), telecommunications, and optical signatures for security coatings. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Optical spectral relation between the master and the frequency-locked slave lasers

In this paper, the spectral relation between the master and the frequency-locked slave laser (FLSL) is investigated by the conventional technique of optical intensity modulation and optical heterodyne. Experimentally, we demonstrate that under complete and stable locking condition, the lightwave of the FLSL and the sidebands of the master laser produced by the optical intensity modulation are perfectly coherent (frequency coherence). Referring to our recent studies, the lightwave of the master laser and its corresponding sidebands are also perfectly coherent. Additionally, the spectral structures of two perfectly coherent lightwaves are identical in the level of wave train. Therefore, we indirectly verify that the spectral structures of the FLSL and the master laser are identical in the level of wave train.

Investigation on multiple-port microcylinder lasers based on coupled modes

Microcylinder resonators with multiple ports connected to waveguides are investigated by 2D finite-difference time-domain (FDTD) simulation for realizing microlasers with multiple outputs. For a 10 mu m radius microcylinder with a refractive index of 3.2 and three 2 mu m wide waveguides, confined mode at the wavelength of 1542.3 nm can have a mode Q factor of 6.7 x 10(4) and an output coupling efficiency of 0.76. AlGaInAs/InP microcylinder lasers with a radius of 10 mu m and a 2 mu m wide output waveguide are fabricated by planar processing techniques. Continuous-wave electrically injected operation is realized with a threshold current of 4 mA at room temperature, and the jumps of output power are observed accompanying a lasing mode transformation.

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 x 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/mu m(2). Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics.

Metal film effect on performance of very-small-aperture lasers

Special characteristics of very-small-aperture lasers are observed, including threshold current change, red shift of the spectral position, and short lifetime at low drive current. Physical mechanisms that underlie these special characteristics are analyzed: we find that optical feedback caused by a metal film and heat accumulation inside the laser diode lead to the special characteristics of VSALs, such as threshold current change, red shift of the spectral position, and short lifetime at low drive current, etc. Theoretical simulation is in good agreement with the experimental results.

Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers

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Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers

The control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers is investigated. The symmetric slab waveguide model is adopted to analyze the control parameters, of the beam profile in the photonic-crystal vertical-cavity surface-emitting laser (PC-VCSEL). The filling factor (the ratio of the hole diameter to the lattice constant) and the etching depth control the divergence angle of the PC-VCSEL, and the low filling factor and the shallow etching depth are beneficial to achieve the low-divergence-angle beam. Two types of PC-VCSELs with different filling factors and etching depths are designed and fabricated. The experimental results show that the device with a lower filling factor and a shallower etching depth has a lower divergence angle, which agrees well with the theoretical predictions.

Sub-wavelength beam lasers with surface plasmon structures

The simulation of a plasmonic very-small-aperture laser is demonstrated in this paper. It is an integration of the surface plasmon structure and very-small-aperture laser (VSAL). The numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field (3.5 mu m far from the emitting surface), and the output power density can be enhanced over 30 times of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope.

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

Room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers with single longitudinal and lateral mode performance

We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.