An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

Real-time temperature estimation for power MOSFETs considering thermal aging effects

This paper presents a novel real-time power-device temperature estimation method that monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as online health monitoring for power electronic systems, but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids, and even delamination within the device components, particularly in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones, and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power-device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications. 

Secret and power in social life

Secret and power constitute two fundamental instances of the social world. Secret takes care of the concealment of things and of social processes. Secret is also a power device. Power is the social capacity to do, create, not doing and stop from doing. Secret and power get mutual feedback. Power uses the secret to protect his potential, be it what may, to increment its operative strength. Secret uses the power to achieve its aims and proposals. Social sciences seem to ignore the huge explanatory capacity of these two interrelated concepts, and even more, their powerful intervention in societies.

Secret and power in social life

Secret and power constitute two fundamental instances of the social world. Secret takes care of the concealment of things and of social processes. Secret is also a power device. Power is the social capacity to do, create, not doing and stop from doing. Secret and power get mutual feedback. Power uses the secret to protect his potential, be it what may, to increment its operative strength. Secret uses the power to achieve its aims and proposals. Social sciences seem to ignore the huge explanatory capacity of these two interrelated concepts, and even more, their powerful intervention in societies.

Secret and power in social life

Secret and power constitute two fundamental instances of the social world. Secret takes care of the concealment of things and of social processes. Secret is also a power device. Power is the social capacity to do, create, not doing and stop from doing. Secret and power get mutual feedback. Power uses the secret to protect his potential, be it what may, to increment its operative strength. Secret uses the power to achieve its aims and proposals. Social sciences seem to ignore the huge explanatory capacity of these two interrelated concepts, and even more, their powerful intervention in societies.

Real-time temperature estimation for power MOSFETs considering thermal ageing effects

This paper presents a novel real-time power-device temperature estimation method that monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as online health monitoring for power electronic systems, but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids, and even delamination within the device components, particularly in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones, and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power-device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

Conhecimentos pedagógicos como orientação para a "missão docente": a formação na Escola Normal de Niterói na Primeira República (1893-1915)

A dissertação analisa a política de formação docente oferecida pela Escola Normal de Niterói entre 1893 e 1915. O projeto de institucionalização da escolarização de professores representou momento de transformações significativas na profissão, então associada aos ideais de progresso e modernidade republicanos, com destaque para a circulação e apropriação de teorias pedagógicas. Buscou-se conhecer o lugar de tais teorias e dos saberes na formação institucional de professores, visando compreender, em que medida, as representações sobre a missão docente se fez presente nos discursos dos Presidentes de Estado no período. Com esse objetivo, analisamos as reformas de ensino e as frequentes inserções e retiradas de disciplinas escolares, em meio aos intensos debates na esfera governamental sobre o que ensinar ao povo e aos professores. Almejava-se um saber que fosse capaz de ampliar a visão do cidadão brasileiro, modificar seus hábitos e inseri-lo na modernidade, aspectos que condiziam com a construção de um espírito republicano. Para compreender o funcionamento e a contribuição dessa escola para a história da educação fluminense, analisamos a legislação educacional, os programas e as disciplinas, e também alguns exames de admissão e finais dos alunos. Foram utilizadas as mensagens dos presidentes do Estado (1892 a 1918), as leis que reformaram ou regulamentaram a instrução pública (1893, 1895, 1900, 1912 e 1915), em particular a Escola Normal de Niterói, os exames de admissão (1901 a 1908), os exames finais dos alunos (1897 a 1911) e um diário de Geografia (1915). Tais documentos foram analisados à luz de extensa historiografia sobre a formação docente e permitiram conhecer práticas escolares da instituição. As leis que modificaram os programas tentaram imprimir um caráter mais científico ao curso e muito se discutiu sobre a questão prática. Para tanto, as disciplinas tencionavam articular a teoria à experiência corroborando a aptidão do professor. A aprendizagem era verificada por meio de exames finais, que sucediam as sabatinas e as provas. Examinar era um dispositivo de poder que comparava e excluía e não apenas mensurava o conhecimento. Investigar a formação de professores nos levou a olhar as articulações históricas e as relações de forças que a constituíram. A pesquisa documental sugere a necessidade de ampliarmos a visão sobre a formação docente na Primeira República, tendo em vista que houve esforços em se organizar a instrução pública, sobretudo, no que concerne à Escola Normal de Niterói.

Câmara Municipal: uma sociedade de discurso na cidade-corte do Império do Brasil (1828-1834)

O presente trabalho problematiza a Câmara Municipal da cidade-corte do Rio de Janeiro como uma sociedade de discurso. Por meio de seus enunciados, visíveis a partir das Posturas Municipais, é possível entender o discurso como um mecanismo de poder, que estabelece relações e sujeições. Prática que busca formar sistematicamente os objetos de que fala, a lei é um dispositivo de poder e um espaço de exterioridade, que cria e desenvolve uma rede de lugares distintos. Este saber/poder inventa formas de percepção e hierarquizações, fabrica evidências e organiza lugares. Produz mais que dizibilidades, saberes que devem circular, ser conhecidos e obedecidos. Há toda uma produção de visibilidades, ancorada às normas, que procura formar individualidades docilizadas. Oficiais nomeados e transgressores são, portanto, efeitos de uma governamentalidade que, após a emancipação política do Brasil, se volta ao cotidiano em seus mais efêmeros detalhes. Assim, esta tese de doutorado objetiva cartografar esta matriz discursiva e os dispositivos de sujeição experimentados pela Câmara Municipal, analisando suas Posturas e Registros de Infração, como práticas de subjetivação aplicadas no governo da cidade.

More oomph

An ingenious new CMOS-compatible process which promises to significantly improve the performance of power devices is discussed. A novel power device concept based on the use of high voltage regions suspended on thin semiconductor/dielectric membranes is reported. The membrane power devices are manufactured in a fully-CMOS compatible silicon-on-insulator (SOI) process followed by a bulk etching step and subsequent back-passivation. The concept is applicable to a class of high voltage devices such as LDMOSFETs, diodes, LIGBTs and superjunctions.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

Optical Fiber Refractive Index Sensor for Chloride Ion Monitoring

The development of a reflective, gold-coated long-period grating-based sensor for the measurement of chloride ions in solution is discussed. The sensor scheme is based around a long-period fiber grating (LPG)-based Michelson interferometer where the sensor was calibrated and evaluated in the laboratory using sodium chloride solutions, over a wide range of concentrations, from 0.01 to 4.00 M. The grating response creates shifts in the spectral characteristic of the interferometer, formed using the LPG and a reflective surface on the distal end of the fiber, due to the change of refracting index of the solution surrounding it. It was found that the sensitivity of the device could be enhanced over that obtained from a bare fiber by coating the LPG-based interferometer with gold nanoparticles and the results of a cross-comparison of performance were obtained and details discussed. The approach will be explored as a basis to create a portable, low-power device, developed with the potential for installation in concrete structures to determine the ingress of chloride ions, operating through monitoring the refractive index change.

Latching control of a point absorber

In this paper the authors investigate the use of optimal control techniques for improving the efficiency of the power conversion system in a point absorber wave power device. A simple mathematical model of the system is developed and an optimal control strategy for power generation is determined. They describe an algorithm for solving the problem numerically, provided the incident wave force is given. The results show that the performance of the device is significantly improved with the handwidth of the response being widened by the control strategy.

Processamento embarcado aplicado a um sistema de deteccão de vazamentos

Embedded systems are widely spread nowadays. An example is the Digital Signal Processor (DSP), which is a high processing power device. This work s contribution consist of exposing DSP implementation of the system logic for detecting leaks in real time. Among the various methods of leak detection available today this work uses a technique based on the pipe pressure analysis and usesWavelet Transform and Neural Networks. In this context, the DSP, in addition to do the pressure signal digital processing, also communicates to a Global Positioning System (GPS), which helps in situating the leak, and to a SCADA, sharing information. To ensure robustness and reliability in communication between DSP and SCADA the Modbus protocol is used. As it is a real time application, special attention is given to the response time of each of the tasks performed by the DSP. Tests and leak simulations were performed using the structure of Laboratory of Evaluation of Measurement in Oil (LAMP), at Federal University of Rio Grande do Norte (UFRN)