Compact, frequency reconfigurable, printed monopole antenna

This paper proposes a possible implementation of a compact printed monopole antenna, useful to operate in UMTS and WLAN bands. In order to accomplish that, a miniaturization technique based on the application of chip inductors is used in conjunction with frequency reconfiguration capability. The chip inductors change the impedance response of the monopole, allowing to reduce the resonant frequency. In order to be able to operate the antenna in these two different frequencies, an antenna reconfiguration technique based on PIN diodes is applied. This procedure allows the change of the active form of the antenna leading to a shift in the resonant frequency. The prototype measurements show good agreement with the simulation results.

Reconfigurable antenna for mobile terminal

Trabalho Final de Mestrado para obtenção do grau de Mestrado em Engenharia Electrónica e Telecomunicações

A Compact Electronically Reconfigurable Dual Frequency Microstrip Antenna for L-Band Applications

A novel design of a computer electronically reconfigurable dual frequency dual polarized single feed hexagonal slot loaded microstrip antenna in L-band is introduced in this chapter. pin diodes are used to switch the operating frequencies considerably without much affecting the radiation characteristics and gain. the antenna can work with a frequency ratio varying in the wide range from 1.2 to 1.4. the proposed design has an added advantage of size reduction up to 72.21% and 46.84% for the two resonating frequencies compared to standard rectangular patches. the design also gives considerable bandwidth of up to 2.82% and 2.42 % for the operating frequencies.

Antenas e superfícies seletivas de freqüência reconfiguráveis para sistemas de comunicação sem fio

This work aims to present how the reconfigurable microstrip antennas and frequency selective surfaces can be used to operate at communication systems that require changing their operation frequency according to system requirements or environmental conditions. The main purpose is to present a reconfigurable circular microstrip antenna using a parasitic ring and a reconfigurable dipole frequency selective surface. Thereupon there are shown fundamental topics like microstrip antennas, PIN diodes and the fundamental theory of reconfigurable antennas and frequency selective surfaces. There are shown the simulations and measurements of the fabricated prototypes and it is done an analysis of some parameters like the bandwidth and radiation pattern, for the antennas, and the transmission characteristics, for the frequency selective surface. Copper strips were used in place of the diodes for proof of the reconfigurability concept

A Transportable Reflectarray Antenna for Satellite Ku-band Emergency Communications

The design of a Ku-band reconfigurable reflectarray antenna for emergency satellite communications is presented. Bidirectional high data rate satellite links are needed in emergency conditions where other telecommunication infrastructures are not available. In order to operate in this type of scenario, an antenna should be deployable, transportable, and easily repointable. The need of an automatic and fast satellite location and pointing system leads to a completely electronic reconfigurable antenna. The operative bandwidth is from 10.7 to 12.5 GHz for reception and from 14 up to 14.5 GHz for transmission (30% of relative bandwidth). The selected antenna architecture is based on a dual reflectarray system comprising a passive subreflectarray and an active main reflectarray made of reconfigurable 1-bit elementary cells based on PIN diodes.

Highly linear reconfigurable UWB filters with independently controlled dual bandnotch

This letter proposes a high-linearity reconfigurable lower ultra-wideband (3.1–5.25 GHz) filter with independently controlled dual bandnotch at WiMAX 3.5 GHz band and satellite communication systems 4.2 GHz band. Reconfigurability has been achieved by the implementation of Graphene based switches (simulation only) and PIN diodes (measurements). The simulation and measurement results in OFF state show an entire bandpass response from 3.1 GHz to 5.25 GHz and with a very low insertion loss. In ON state, the results show that sharp rejections at 3.5 GHz and 4.2 GHz are achieved, with a low passband insertion loss. The two bandnotch operate independently of each other; thus allowing to control the behaviour of the required bandnotch. The third order intermodulation products were also measured in OFF and ON states and the linearity results have been presented. The filter is able to achieve a high performance with good linearity and no significant loss.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.

Temperature and electric field dependent mobility in poly„3-hexylthiophene diodes

Current-voltage (I-V) curves of Poly(3-hexyl-thiophene) (P3HT) diodes have been collected to investigate the polymer hole-dominated charge transport. At room temperature and at low electric fields the I-V characteristic is purely Ohmic whereas at medium-high electric fields, experimental data shows that the hole transport is Trap Dominated - Space Charge Limited Current (TD-SCLC). In this regime, it is possible to extract the I-V characteristic of the P3HT/Al junction showing the ideal Schottky diode behaviour over five orders of magnitude. At high-applied electric fields, holes’ transport is found to be in the trap free SCLC regime. We have measured and modelled in this regime the holes’ mobility to evaluate its dependence from the electric field applied and the temperature of the device.

Hybrid light-emitting diodes based on flexible sheets of mass-produced ZnO nanowires

We report the production of free-standing thin sheets made up of mass-produced ZnO nanowires and the application of these nanowire sheets for the fabrication of ZnO/organic hybrid light-emitting diodes in the manner of assembly. Different p-type organic semiconductors are used to form heterojunctions with the ZnO nanowire film. Electroluminescence measurements of the devices show UV and visible emissions. Identical strong red emission is observed independent of the organic semiconductor materials used in this work. The visible emissions corresponding to the electron transition between defect levels within the energy bandgap of ZnO are discussed.

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

In this paper, we fabricated Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100 ∘C and 150 ∘C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta2O5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.

Hybrid light-emitting diodes based on ZnO nanowires

ZnO is a wide band-gap semiconductor that has several desirable properties for optoelectronic devices. With its large exciton binding energy of ~60 meV, ZnO is a promising candidate for high stability, room-temperature luminescent and lasing devices [1]. Ultraviolet light-emitting diodes (LEDs) based on ZnO homojunctions had been reported [2,3], while preparing stable p-type ZnO is still a challenge. An alternative way is to use other p-type semiconductors, ether inorganic or organic, to form heterojunctions with the naturally n-type ZnO. The crystal structure of wurtzite ZnO can be described as Zn and O atomic layers alternately stacked along the [0001] direction. Because of the fastest growth rate over the polar (0001) facet, ZnO crystals tend to grow into one-dimensional structures, such as nanowires and nanobelts. Since the first report of ZnO nanobelts in 2001 [4], ZnO nanostructures have been particularly studied for their potential applications in nano-sized devices. Various growth methods have been developed for growing ZnO nanostructures, such as chemical vapor deposition (CVD), Metal-organic CVD (MOCVD), aqueous growth and electrodeposition [5]. Based on the successful synthesis of ZnO nanowires/nanorods, various types of hybrid light-emitting diodes (LEDs) were made. Inorganic p-type semiconductors, such as GaN, Si and SiC, have been used as substrates to grown ZnO nanorods/nanowires for making LEDs. GaN is an ideal material that matches ZnO not only in the crystal structure but also in the energy band levels. However, to prepare Mg-doped p-GaN films via epitaxial growth is still costly. In comparison, the organic semiconductors are inexpensive and have many options to select, for a large variety of p-type polymer or small-molecule semiconductors are now commercially available. The organic semiconductor has the limitation of durability and environmental stability. Many polymer semiconductors are susceptible to damage by humidity or mere exposure to oxygen in the air. Also the carrier mobilities of polymer semiconductors are generally lower than the inorganic semiconductors. However, the combination of polymer semiconductors and ZnO nanostructures opens the way for making flexible LEDs. There are few reports on the hybrid LEDs based on ZnO/polymer heterojunctions, some of them showed the characteristic UV electroluminescence (EL) of ZnO. This chapter reports recent progress of the hybrid LEDs based on ZnO nanowires and other inorganic/organic semiconductors. We provide an overview of the ZnO-nanowire-based hybrid LEDs from the perspectives of the device configuration, growth methods of ZnO nanowires and the selection of p-type semiconductors. Also the device performances and remaining issues are presented.

Pt/TiO2 nanotubes/SiC schottky diodes for hydrogen gas sensing applications

Titanium oxide nanotubes Schottky diodes were fabricated for hydrogen gas sensing applications. The TiO2 nanotubes were synthesized via anodization of RF sputtered titanium films on SiC substrates. Two anodization potentials of 5 V and 20 V were used. Scanning electron microscopy of the synthesized films revealed nanotubes with avarage diameters of 20 nm and 75 nm. X-ray diffraction analysis revealed that the composition of the oxide varied with the anodization potential. TiO2 (anatase) being formed preferentially at 5 V and TiO (no anatase) at 20 V. Current-voltage characteristics of the diodes were studied towards hydrogen at temperatures from 25°C to 250°C. At constant current bias of −500 μA and 250°C, the lateral voltage shifts of 800 mV and 520 mV were recorded towards 1% hydrogen for the 5 V and 20 V anodized nanotubes, respectively.

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

We developed Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta2O5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications.