DCOOD optically pumped by a13CO2 laser: New terahertz laser lines

In this work, we report new optically pumped terahertz laser lines from DCOOD. An isotopic 13CO2 laser was used for first time as pump source, and a Fabry-Perot open cavity was used as a terahertz laser resonator. Optoacoustic absorption spectra were used as a guide to search for new terahertz laser lines. We could observe six new laser lines in the range from 303.8μm (0.987 THz) to 725.1μm (0.413 THz). The lines were characterized according to wavelength, relative polarization, relative intensity, and optimum working pressure. The transferred Lamb-dip technique was used to measure the frequency absorption transition both for this laser lines. © 2008 American Institute of Physics.

Enhanced carrier-carrier interaction in optically pumped hydrogenated nanocrystalline silicon

A femtosecond pump-probe setup was used to measure the time resolved reflectivity of hydrogenated amorphous silicon containing crystalline silicon nanoparticles at eight different incidence angles. Results fitted with the Drude model found a scattering rate of G = 2-1+1.2×1015?s-1 at a corresponding carrier concentration of ~ 1020?cm-3. The observed scattering rate is attributed to enhanced carrier-carrier interaction in optically pumped nanocrystals.

Optically pumped chirped grating for tunable chromatic dispersion compensation

We demonstrate a novel optically tunable dispersion compensator based on pumping a chirped grating made in Er/Yb co-doped fiber. The dispersion was tuned from 900 to 1900ps/nm and also from-600 to-950ps/nm in the experiment. © 2010 Optical Society of America.

Mode-locked semiconductor disk lasers

This paper will review the recent advances in the field of ultrashort pulse generation from optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this review, we will summarize the most significant results presented over the last 15 years, before highlighting recent breakthroughs related to mode-locked VECSELs by different research groups. Different mode-locking techniques for OP-VECSELs are described in detail. Previously, saturable absorbers, such as semiconductor saturable absorber mirrors—external, or internal as in mode-locked integrated external-cavity surface emitting lasers (MIXSEL)—, and recently, novel-material-based carbon-nanotube and graphene saturable absorbers have been employed. A new mode-locking method was presented and discussed in recent years. This method is referred to as self-mode-locking or saturable-absorber-free operation of mode-locked VECSELs. In this context, we particularly focus on achievements regarding self-mode-locking, which is considered a promising technique for the realization of high-power, compact, robust and cost-efficient ultrashort pulse lasers. To date, the presented mode-locking techniques have led to great enhancement in average powers, peak powers, and repetition rates that can be achieved with passively mode-locked VECSELs.

Gain saturation in 60-fs mode-locked semiconductor laser

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. © 2010 Optical Society of America.

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Correlations between the performance characteristics of a liquid crystal laser and the macroscopic material properties.

In order to understand how the performance of a liquid-crystal laser depends on the physical properties of the low molar mass nematic host, we have studied the energy threshold and slope efficiency of ten optically pumped liquid-crystal lasers based on different hosts. Specifically, this leads to a variation in the birefringence, the orientational order parameter, and the order parameter of the transition dipole moment of the dye. It is found that low threshold energies and high slope efficiencies correlate with high order parameters and large birefringences. To a first approximation this can be understood by considering analytical expressions for the threshold and slope efficiency, which are derived from the space-independent rate equations for a two-level system, in terms of the macroscopic liquid crystal properties.

Graphene modelocked VECSELs

In the past decade, passively modelocked optically pumped vertical external cavity surface emitting lasers (OPVECSELs), sometimes referred to as semiconductor disk lasers (OP-SDLs), impressively demonstrated the potential for generating femtosecond pulses at multi-Watt average output powers with gigahertz repetition rates. Passive modelocking with a semiconductor saturable absorber mirror (SESAM) is well established and offers many advantages such as a flexible design of the parameters and low non-saturable losses. Recently, graphene has emerged as an attractive wavelength-independent alternative saturable absorber for passive modelocking in various lasers such as fiber or solid-state bulk lasers because of its unique optical properties. Here, we present and discuss the modelocked VECSELs using graphene saturable absorbers. The broadband absorption due to the linear dispersion of the Dirac electrons in graphene makes this absorber interesting for wavelength tunable ultrafast VECSELs. Such widely tunable modelocked sources are in particularly interesting for bio-medical imaging applications. We present a straightforward approach to design the optical properties of single layer graphene saturable absorber mirrors (GSAMs) suitable for passive modelocking of VECSELs. We demonstrate sub-500 fs pulses from a GSAM modelocked VECSEL. The potential for broadband wavelength tuning is confirmed by covering 46 nm in modelocked operation using three different VECSEL chips and up to 21 nm tuning in pulsed operation is achieved with one single gain chip. A linear and nonlinear optical characterization of different GSAMs with different absorption properties is discussed and can be compared to SESAMs. © 2014 SPIE.

Passively modelocked VECSEL using a single-layer graphene saturable absorber mirror

Optically pumped ultrafast vertical external cavity surface emitting lasers (VECSELs), also referred to as semiconductor disk lasers (SDLs), are very attractive sources for ps- and fs-pulses in the near infrared [1]. So far VECSELs have been passively modelocked with semiconductor saturable absorber mirrors (SESAMs, [2]). Graphene has emerged as a promising saturable absorber (SA) for a variety of applications [3-5], since it offers an almost unlimited bandwidth and a fast recovery time [3-5]. A number of different laser types and gain materials have been modelocked with graphene SAs [3-4], including fiber [5] and solid-state bulk lasers [6-7]. Ultrafast VECSELs are based on a high-Q cavity, which requires very low-loss SAs compared to other lasers (e.g., fiber lasers). Here we develop a single-layer graphene saturable absorber mirror (GSAM) and use it to passively modelock a VECSEL. © 2013 IEEE.

Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well

A modified self-consistent method is introduced for the design of AlxGa1-xN/GaN step quantum well (SQW) with the position and energy-dependent effective mass. The effects of nonparabolicity are included. It is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. The effects of nonparabolicity have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. The strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1 -> 3). It is shown that in an appropriate scope, the intersubband transition (1 -> 3) has the comparable oscillator strength with transition from the ground state to the second one (1 -> 2), which suggests the possible application of the two-color photodetectors. The results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (QWIPs). (c) 2005 Elsevier B.V. All rights reserved.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 lase

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz. (C) 2008 Elsevier GmbH. All rights reserved.

Blue amplified spontaneous emission from 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer with high photoluminescence efficiency

The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.