531 resultados para Mems


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In this paper, the design and development of micro electro mechanical systems (MEMS) based pressure sensor with triple modular redundancy (TMR) for space applications has been presented. In order to minimize the mass of the system and also to avoid the uncertainty in the pressure measurement of the three independent hardware, an integrated approach with TMR is adopted. Sequential steps of TMR logic followed and the test results obtained are included.

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The objective of this work is to confirm the possibility of utilization of PolyVinyliDeneFlouride (PVDF) films in MEMS based microactuator for microjet applications. A membrane type microactuator is designed, developed, packaged and tested. The microactuator consists of PVDF film attached to thin Silicon diaphragm. As the voltage difference is applied across it, due to the piezoelectric behaviour, it deforms primarily in d31 mode, which in turn deflects the diaphragm. Using finite element methods, coupled field analysis is carried out to optimize the dimensions of the actuator with respect to the output force and input voltage. A cavity with a square diaphragm of 1mm×1mm×5μm is realized using standard microfabrication technique. 50μm thick PVDF film, cut with special dicing saw, is glued inside the metalized cavity using low stress, conductive, room temperature cured epoxy. The 3mm×3mm×0.675mm actuator die is packaged using Chip-On-Board technique in conjunction with low temperature soldering for taking the connections. The micro-actuator is tested in both actuation and sensing mode. The developed actuator is proposed to use with micro nozzle to study the utilization in drug delivery system.

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Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

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This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.

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MEMS resonators have potential application in the area of frequency selective devices (e.g., gyroscopes, mass sensors, etc.). In this paper, design of electro thermally tunable resonators is presented. SOIMUMPs process is used to fabricate resonators with springs (beams) and a central mass. When voltage is applied, due to joule heating, temperature of the conducting beams goes up. This results in increase of electrical resistance due to mobility degradation. Due to increase in the temperature, springs start softening and therefore the fundamental frequency decreases. So for a given structure, one can modify the original fundamental frequency by changing the applied voltage. Coupled thermal effects result in non-uniform heating. It is observed from measurements and simulations that some parts of the beam become very hot and therefore soften more. Consequently, at higher voltages, the structure (equivalent to a single resonator) behaves like coupled resonators and exhibits peak splitting. In this mode, the given resonator can be used as a band rejection filter. This process is reversible and repeatable. For the designed structure, it is experimentally shown that by varying the voltage from 1 to 16V, the resonant frequency could be changed by 28%.

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This paper explains the reason behind pull-in time being more than pull-up time of many Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches at actuation voltages comparable to the pull-in voltage. Analytical expressions for pull-in and pull-up time are also presented. Experimental data as well as finite element simulations of electrostatically actuated beams used in RF-MEMS switches show that the pull-in time is generally more than the pull-up time. Pull-in time being more than pull-up time is somewhat counter-intuitive because there is a much larger electrostatic force during pull-in than the restoring mechanical force during the release. We investigated this issue analytically and numerically using a 1D model for various applied voltages and attribute this to energetics, the rate at which the forces change with time, and softening of the overall effective stiffness of the electromechanical system. 3D finite element analysis is also done to support the 1D model-based analyses.

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We propose a novel MEMS tunable optical filter with a flat-top pass band based on multi-ring resonator in an electrostatically actuated microcantilever for communication application. The filter is basically structured on a microcantilever beam and built in optical integrated ring resonator which is placed in one end of the beam to gain maximum stress on the resonator. Thus, when a DC voltage is applied, the beam will bend, that induces a stress and strain in the ring, which brings a change in refractive index and perimeter of the rings leading to change in the output spectrum shift, providing the tenability as high as 0.68nm/mu N. and it is capable of tuning up to 1.7nm.

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Plasma enhanced chemical vapour deposition (PECVD) of thick germanium (Ge) films (similar to 1 mu m) on silicon dioxide (SiO2) at low temperatures is described. A diborane pretreatment on SiO2 films is done to seed the Ge growth, followed by the deposition of thick Ge films using germane (GeH4) and argon (Ar). Further, the effect of hydrogen (H-2) dilution on the deposition rate is also investigated. The film thickness and morphology is characterized using SEM. Use of high RF power and substrate temperature show increased deposition rate. EDS analysis indicates that these films contain 97-98 atomic percentage of Ge. A recipe for anisotropic dry etching of the deposited Ge films with 10nm/ min etch rate is also suggested.

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A comprehensive design flow is proposed for the design of Micro Electro Mechanical Systems that are fabricated using SOIMUMPs process. Many of the designers typically do not model the temperature dependency of electrical conductivity, thermal conductivity and convection coefficient, as it is very cumbersome to create/incorporate the same in the existing FEM simulators. Capturing these dependencies is very critical particularly for structures that are electrically actuated. Lookup tables that capture the temperature dependency of electrical conductivity, thermal conductivity and convection coefficient are created. These look up tables are taken as inputs for a commercially available FEM simulator to model the semiconductor behavior. It is demonstrated that when temperature dependency for all the above mentioned parameters is not captured, then the error in estimation of the maximum temperature (for a given structure) could be as high as 30%. Error in the estimated resistance value under the same conditions is as high as 40%. When temperature dependency of the above mentioned parameters is considered then error w.r.t the measured values is less than 5%. It is evident that error in temperature estimates leads to erroneous results from mechanical simulations as well.

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We present a hybrid finite element based methodology to solve the coupled fluid structure problem of squeeze film effects in vibratory MEMS devices, such as gyroscopes, RF switches, and 2D resonators. The aforementioned devices often have a thin plate like structure vibrating normally to a fixed substrate, and are generally not perfectly vacuum packed. This results in a thin air film being trapped between the vibrating plate and the fixed substrate which behaves like a squeeze film offering both stiffness and damping. For accurate modelling of such devices the squeeze film effects must be incorporated. Extensive literature is available on squeeze film modelling, however only a few studies address the coupled fluid elasticity problem. The majority of the studies that account for the plate elasticity coupled with the fluid equation, either use approximate mode shapes for the plate or use iterative solution strategies. In an earlier work we presented a single step coupled methodology using only one type of displacement based element to solve the coupled problem. The displacement based finite element models suffer from locking issues when it comes to modelling very thin structures with the lateral dimensions much larger than the plate thickness as is typical in MEMS devices with squeeze film effects. In this work we present another coupled formulation where we have used hybrid elements to model the structural domain. The numerical results show a huge improvement in convergence and accuracy with coarse hybrid mesh as compared to displacement based formulations. We further compare our numerical results with experimental data from literature and find them to be in good accordance.