Effect of FIB milling on MEMS SOI cantilevers
| Data(s) |
2012
|
|---|---|
| Resumo |
Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/47874/1/Opto_Micro_Mate_Devi_165_2012.pdf Venkatesh, C and Singh, PP and Renilkumar, M and Varma, M and Bhat, N and Pratap, R and Martyniuk, M and Keating, A and Umama-Membreno, GA and Silva, KKMBD and Dell, JM and Faraone, L (2012) Effect of FIB milling on MEMS SOI cantilevers. In: 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), 12-14 Dec. 2012, Melbourne, VIC. |
| Publicador |
IEEE |
| Relação |
http://dx.doi.org/10.1109/COMMAD.2012.6472412 http://eprints.iisc.ernet.in/47874/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Conference Paper PeerReviewed |
