Electrical and optical properties of poly(2-dodecanoylsulfanyl-p-phenylenevnylene) and its application in electroluminescent devices

We describe the optical and electrical characterization of a poly(p-phenylenevinylene) derivative: poly(2-dodecanoylsulfanyl-p-phenylenevinylene) (12COS-PPV). The electrical characterization was carried out on devices with the FTO\PEDOT:PSS\12COS-PPV/Al structure. Positive charge carrier mobility mu(h) of similar to 1.0 x 10(-6) cm(2) V(-1) s(-1) and barrier height phi of similar to 0.1 eV for positive charge carrier injection at the PEDOT:PSS/12COS-PPV interface were obtained using a thermionic injection model. FTO\PEDOT:P55\12COS-PPV/Ca devices exhibited green-yellow electroluminescence with maximum emission at lambda = 540 nm.

Effect of Plastic Deformation on the Excess Loss of Electrical Steel

The interpretation of the effect of plastic deformation on the calculated excess loss component (anomalous-loss) supports the concept of loss separation. Magnetic losses and Barkhausen noise of nonoriented electrical steel sheets were measured on Epstein strips taken from a single coil of 0.8% Si nonoriented electrical steel. Sheets were extracted in the annealed condition, without any skin pass and with a grain size of 18 mu m. This material was cold rolled in order to obtain sets of samples with true strain from 2% up to 29%. X-ray diffraction was used to estimate the dislocation density. The analysis of magnetic properties was performed by Barkhausen noise measurements and also by analyzing the hysteresis loops obtained from Epstein frame measurements for different inductions and different frequencies (including the quasi-static regime for hysteresis loss measurements). These data allowed us to observe that most of the well known total loss increase with plastic deformation is due to an increase in the hysteresis loss component, while excess loss decreases to become negligible. This behavior can be explained if it is assumed that the plastic deformation lead to an increase in the number of domain walls per unit volume, thereby decreasing the excess loss. Barkhausen peak area increases with plastic deformation, reproducing results taken from samples of different silicon content.

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

The floating-body-RAM sense margin and retention-time dependence on the gate length is investigated in UTBOX devices using BJT programming combined with a positive back bias (so-called V th feedback). It is shown that the sense margin and the retention time can be kept constant versus the gate length by using a positive back bias. Nevertheless, below a critical L, there is no room for optimization, and the memory performances suddenly drop. The mechanism behind this degradation is attributed to GIDL current amplification by the lateral bipolar transistor with a narrow base. The gate length can be further scaled using underlap junctions.

Electrical Resistivity Measurements of Powder Metal Compacts

This work, as it was originally planned, was the arranging of an apparatus whereby electrical resistivity measurements could be made on powder compacts. It was also to include measurements on a series of copper-nickel compacts both before and after sintering.

Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxation

In a first experiment, a reactively sputtered amorphous Ta������Si������N������ film about 260 nm thick deposited on a flat and smooth alumina substrate was thermally annealed in air for 30 min and let cooled again repeatedly at successively higher temperatures from 200 to 500 ��C. This treatment successively and irreversibly increases the room temperature resistivity of the film monotonically from its initial value of 670 ���� cm to a maximum of 705 ���� cm (+5.2 %). Subsequent heat treatments at temperatures below 500 ��C and up to 6 h have no further effect on the room temperature resistivity. The new value remains unchanged after 3.8 years of storage at room temperature. In a second experiment, the evolution of the initially compressive stress of a film similarly deposited by reactive sputtering on a 2-inch silicon wafer was measured by tracking the wafer curvature during similar thermal annealing cycles. A similar pattern of irreversible and reversible changes of stress was observed as for the film resistivity. Transmission electron micrographs and secondary ion mass profiles of the film taken before and after thermal annealing in air establish that both the structure and the composition of the film scarcely change during the annealing cycles. We reason that the film stress is implicated in the resistivity change. In particular, to interpret the observations, a model is proposed where the interface between the film and the substrate is mechanically unyielding.

Selected translations on USSR electrical industry.

"CSO: 2501-D."

Proceedings of the Electrical Society of Cornell University.

Description based on: v. 2 (1894/95).

Electrical world

Mode of access: Internet.

Electrical engineer.

Mode of access: Internet.

Electrical world.

"Updated weekly on the internet."

Electrical review.

Founded and for some years edited by G. Worthington.

Electrical & electronics abstracts.

"An INSPEC publication."

Getting round pegs into round holes:getting students onto the right engineering programme

Aston University offers a Foundation year in Engineering and Applied Science. The purpose of this programme is to prepare people with the necessary skills and knowledge required to enrol on an undergraduate programme in Engineering and Applied Science. It is acknowledged there are many misconceptions as to what engineering is. This is further compounded by the lack of knowledge of the different engineering disciplines both by pre-university students and careers teachers [1]. In order to ameliorate this lack of knowledge, Aston University offers a unique programme where students are given the opportunity to have a ?taste? of four Engineering Disciplines: Mechanical Engineering, Electrical Engineering, Chemical Engineering and Computer Science. Alongside these ?taster? sessions, the students study a Professional Skills module where they are expected to keep a portfolio of skills. In their portfolios they comment on their strengths and weakness in relation to six skill areas: independent enquirer, self-manager, effective participator, creative thinker, reflective learner and team worker. The portfolio gives them the opportunity to perform a self-skills audit and identify areas where they have strengths and areas which require work to improve to become a competent professional engineer. They also have talks from engineers who discuss with them their careers and the different aspects of engineering. The purpose of the ?taster? sessions, portfolio and the talks are to encourage the students to critically examine their career aspirations and choose an engineering undergraduate programme which best suits their ambitions and potential skills. The feedback from students has been very positive. The ?taster? sessions have enabled them to make an informed choice as to the undergraduate programme they would like to study. The programme has given them the technical skills and knowledge to enrol on an undergraduate programme and also the skills and knowledge to be a successful learner.

Computational adjustment technique for digital mammographic images based on the digitizer characteristic curve

We evaluated the performance of a novel procedure for segmenting mammograms and detecting clustered microcalcifications in two types of image sets obtained from digitization of mammograms using either a laser scanner, or a conventional ""optical"" scanner. Specific regions forming the digital mammograms were identified and selected, in which clustered microcalcifications appeared or not. A remarkable increase in image intensity was noticed in the images from the optical scanner compared with the original mammograms. A procedure based on a polynomial correction was developed to compensate the changes in the characteristic curves from the scanners, relative to the curves from the films. The processing scheme was applied to both sets, before and after the polynomial correction. The results indicated clearly the influence of the mammogram digitization on the performance of processing schemes intended to detect microcalcifications. The image processing techniques applied to mammograms digitized by both scanners, without the polynomial intensity correction, resulted in a better sensibility in detecting microcalcifications in the images from the laser scanner. However, when the polynomial correction was applied to the images from the optical scanner, no differences in performance were observed for both types of images. (C) 2008 SPIE and IS&T [DOI: 10.1117/1.3013544]

Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiO(x) and TiO(x)N(y) gate dielectric layer

Metal oxide-semiconductor capacitors with TiO(x) deposited with different O(2) partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 degrees C were fabricated and characterized. Fourier transform infrared, x-ray near edge spectroscopy, and elipsometry measurements were performed to characterize the TiO(x) films. TiO(x)N(y) films were also obtained by adding nitrogen to the gaseous mixture and physical results were presented. Capacitance-voltage (1 MHz) and current-voltage measurements were utilized to obtain the effective dielectric constant, effective oxide thickness, leakage current density, and interface quality. The results show that the obtained TiO(x) films present a dielectric constant varying from 40 to 170 and a leakage current density (for V(G)=-1 V, for some structures as low as 1 nA/cm(2), acceptable for complementary metal oxide semiconductor circuits fabrication), indicating that this material is a viable, in terms of leakage current density, highk substitute for current ultrathin dielectric layers. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3043537]