Study of synchronously mode-locked and internally frequency-doubledcw dye laser

The analysis of the characteristics of a synchronously mode-locked and internally frequency-doubled dye laser is presented. Dependence of dye laser pulse characteristics on the cavity length mismatch of the pump laser and dye laser is studied. Variation of the minimum pulsewidth with intracavity bandwidth and the harmonic conversion efficiency is presented in the form of graphs.

Regenerative amplifier with continuously variable pulse duration used in an optical parametric chirped-pulse amplification laser system for synchronous pumping

A Nd:glass regenerative amplifier has been set up to generate the pumping pulse with variable pulse width for an optical parametric chirped-pulse amplification (OPCPA) laser system. Each pulse of the pulse train from a cw self-mode-locking femtosecond Ti:sapphire oscillator is stretched to approximate to300 ps at 1062 nm to be split equally and injected into a nonlinear crystal and the Nd:glass regenerative amplifier, as the chirped signal pulse train and the seed pulse train of the pumping laser system, respectively. By adjusting the cavity length of the regenerative amplifier directly, the width of amplified pulse could be varied continuously from approximate to300 ps to approximate to3 ns. The chirped signal pulse for the OPCPA laser system and the seed pulse for the pumping laser system come from the same oscillator, so that the time jitter between the signal pulse and the pumping pulse in optical parametric amplification stages could be <10 ps. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Stabilization of optical Fabry-Perot sensor by active feedback control of diode laser

This paper presents the design and characterization of a fiber Fabry-Perot interferometer (FFPI) acoustic wave detector with its Q point being stabilized actively. The relationship between the reflectivity of the F-P cavity facets and cavity length was theoretically analyzed, and high visibility of 100% was realized by optimized design of the F-P cavity. To prevent the drifting of the Q point, a new stabilization method by actively feedback controlling of the diode laser is proposed and demonstrated, indicating the method is simple and easy operating. Measurement shows that good tracing of Q point was effectively realized. (c) 2008 Elsevier B.V. All rights reserved.

输出高重复频率脉冲列的全固态激光器

报道了利用声光振幅调制锁模的方法，在激光二极管端面抽运Nd：YVO4激光器上获得320MHz高重复频率脉冲列的实验结果。实验采用平一平腔结构，腔长452mm，耦合输出镜透过率为3．6％。所用声光介质为熔融石英晶体，以铌酸锂作换能器，在驱动功率4．5W时，对1064nm波长衍射效率为50，相应的调制深度为0．31。在最佳锁模状态下，激光二极管抽运功率为3．5W，此时激光平均输出功率为15mw。示波器记录脉冲宽度680ps，实测光束质量因子M^2小于1．5。并在实验基础上对激光器工作的稳定性进行了分析，结果表

Output beam quality of edge pumped planar waveguide lasers with confocal unstable resonators

Output beam quality of edge pumped planar waveguide lasers with confocal unstable resonators is investigated by diffraction methods, taking into account gain saturation, asymmetric pumping, and beam interaction. The influences of pumping uniformity, doping concentration, cavity length and effective Fresnel number are analyzed with respect to output beam quality and pumping efficiency. It is found that good beam quality and high efficiency can be obtained with asymmetric pumping and optimized negative branch confocal unstable resonators. (c) 2005 The Optical Society of Japan.

基于菲佐干涉仪与多通道光电倍增管阵列的多普勒频移检测技术

提出了基于菲佐干涉仪和多通道光电倍增管(PMT)阵列探测器组合的多普勒频移检测的方案, 适用于风速测量的直接探测多普勒激光雷达。首先介绍了工作原理, 再根据菲佐干涉仪光谱特征对频移检测用干涉仪进行了优化设计, 优化设计的菲佐干涉仪腔长150mm、平板反射率0.755。对提出的菲佐干涉仪和多通道光电倍增管阵列探测器组合的方案进行了数值模拟, 以分子散射作为背景噪声, 计算了该方法的风速测量误差。模拟结果表明, 设计的基于菲佐干涉仪的直接探测多普勒测风激光雷达, 在30 s的积分时间内、探测高度5 km以下,

铒镱共掺磷酸盐玻璃的激光性质

制备了镱铒共掺的磷酸盐玻璃并研究了室温下LD泵浦的连续激光输出性质。在泵浦功率为496mW时实现了最大输出功率77mW。讨论了在不同玻璃样品厚度和谐振腔长度时的斜率效率的变化以及在不同玻璃样品厚度，泵浦功率和谐振腔长度时的不同激光模式竞争的动力学行为。结果表明：激光光谱受到光学增益和光学损耗相对大小的限制。

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

Generation of 63-nJ pulses from a fiber oscillator modelocked by nanotubes

We mode-lock a fiber oscillator with cavity length of ~1500m using nanotubes, achieving 1.55ps pulses with pulse energy up to 63nJ at 134 KHz repetition rate. © 2010 Optical Society of America.

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

Experimental observation of resonant modes in GaInAsP microsquare resonators

GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.