Experimental observation of resonant modes in GaInAsP microsquare resonators


Autoria(s): Huang YZ; Chen Q; Guo WH; Yu LJ
Data(s)

2005

Resumo

GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.

Identificador

http://ir.semi.ac.cn/handle/172111/8392

http://www.irgrid.ac.cn/handle/1471x/63726

Idioma(s)

英语

Fonte

Huang, YZ; Chen, Q; Guo, WH; Yu, LJ .Experimental observation of resonant modes in GaInAsP microsquare resonators ,IEEE PHOTONICS TECHNOLOGY LETTERS,DEC 2005,17 (12):2589-2591

Palavras-Chave #光电子学 #GaInAsP-InP
Tipo

期刊论文