Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

zhangdi于2010-03-29批量导入

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

An investigation on fiber coupled polymer waveguide for electro-optic modulator

A novel crosslinkable polyurethane is used as the core layer of the electro-optic(E-O) modulator. The refractive index and dispersion of this material have been detected by analyzing the F-P oscillation in transmission spectra. Calculated results from the effective index method are given to design the Mach-Zehnder and straight 5-layer ridge wave-guide device (including the metal electrodes). With light at 1.31 mum being fiber coupled into waveguide, the mode properties of these devices have been demonstrated in a micron control system. The guided mode is accordant with the theoretical analysis.

Liquid-crystal electro-optic modulator based on electrohydrodynamic effects

A new method of light modulation is reported. This method is based on the electro-optical properties of nematic materials and on the use of a new wedge structure. The advantages of this structure are the possibility of modulating nonpolarized light and the improved signal-to-noise ratio. The highest modulating frequency obtained is 25 kHz.

Optimization of a 42.7 Gb/s wavelength tunable RZ transmitter using a linear spectrogram technique

The optimization of a wavelength tunable RZ transmitter, consisting of an electro-absorption modulator and a SG DBR tunable laser, is carried out using a linear spectrogram based characterization and leads to 1500 km transmission at 42.7 Gb/s independent of the operating wavelength. We demonstrate that, to ensure optimum and consistent transmission performance over a portion of the C-band, the RF drive and bias conditions of the EAM must be varied at each wavelength. The sign and magnitude of the pulse chirp (characterized using the linear spectrographic technique) is therefore tailored to suit the dispersion map of the transmission link. Results achieved show that by optimizing the drive and DC bias applied to the EAM, consistent transmission performance can be achieved over a wide wavelength range. Failure to optimize the EAM drive conditions at each wavelength can lead to serious degradation in system performance.

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

Estudo comparativo entre sistemas RoF com modulação directa e com modulação externa

O RoF (Radio over Fiber) é uma tecnologia que permite a transmissão de sinais rádio de elevada largura de banda, fornecida pela fibra óptica, e simultaneamente mantêm a característica de mobilidade das redes de comunicação móvel. Esta dissertação de mestrado tem como objectivo estudar, simular e comparar sistemas RoF com modulação directa e com modulação externa, utilizando um sinal WiMAX, por ser uma tecnologia recente e com potencial de utilização futura. Desta forma foram avaliados três tipos de moduladores externos, sendo que o modulador EA (Electro-Absorption) é o que permite obter melhores valores de EVM e de SNR devido ao facto deste ter menores perdas de inserção na fibra. Da comparação entre o esquema com modulação directa e o esquema com modulação externa, é possível concluir que para larguras de banda mais baixas a utilização de modulação directa é mais eficiente que a modulação externa, mas à medida que a largura de banda aumenta a modulação externa apresenta claramente melhor desempenho. Isto deve-se ao facto de a modulação directa produzir mais chirp que a modulação externa, sendo que o chirp limita a largura de banda e o comprimento da fibra. De forma a melhorar o desempenho do sistema com modulação directa foi introduzido uma fibra com compensação de dispersão. Foi possível concluir que a utilização de fibra com compensação de dispersão é uma boa solução quando se pretende transmitir sinais de elevada largura de banda em esquemas com modulação directa.

Comparison of cost- and energy-efficient signal modulations for next generation passive optical networks

Extensive numerical investigations are undertaken to analyze and compare, for the first time, the performance, techno-economy, and power consumption of three-level electrical Duobinary, optical Duobinary, and PAM-4 modulation formats as candidates for high-speed next-generation PONs supporting downstream 40 Gb/s per wavelength signal transmission over standard SMFs in C-band. Optimization of transceiver bandwidths are undertaken to show the feasibility of utilizing low-cost and band-limited components to support next-generation PON transmissions. The effect of electro-absorption modulator chirp is examined for electrical Duobinary and PAM-4. Electrical Duobinary and optical Duobinary are powerefficient schemes for smaller transmission distances of 10 km SMFs and optical Duobinary offers the best receiver sensitivity albeit with a relatively high transceiver cost. PAM-4 shows the best power budget and costefficiency for larger distances of around 20 km, although it consumes more power. Electrical Duobinary shows the best trade-off between performance, cost and power dissipation.

A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.

Photonic integrated circuits for the generation of coherent optical signals

The demand for optical bandwidth continues to increase year on year and is being driven primarily by entertainment services and video streaming to the home. Current photonic systems are coping with this demand by increasing data rates through faster modulation techniques, spectrally efficient transmission systems and by increasing the number of modulated optical channels per fibre strand. Such photonic systems are large and power hungry due to the high number of discrete components required in their operation. Photonic integration offers excellent potential for combining otherwise discrete system components together on a single device to provide robust, power efficient and cost effective solutions. In particular, the design of optical modulators has been an area of immense interest in recent times. Not only has research been aimed at developing modulators with faster data rates, but there has also a push towards making modulators as compact as possible. Mach-Zehnder modulators (MZM) have proven to be highly successful in many optical communication applications. However, due to the relatively weak electro-optic effect on which they are based, they remain large with typical device lengths of 4 to 7 mm while requiring a travelling wave structure for high-speed operation. Nested MZMs have been extensively used in the generation of advanced modulation formats, where multi-symbol transmission can be used to increase data rates at a given modulation frequency. Such nested structures have high losses and require both complex fabrication and packaging. In recent times, it has been shown that Electro-absorption modulators (EAMs) can be used in a specific arrangement to generate Quadrature Phase Shift Keying (QPSK) modulation. EAM based QPSK modulators have increased potential for integration and can be made significantly more compact than MZM based modulators. Such modulator designs suffer from losses in excess of 40 dB, which limits their use in practical applications. The work in this thesis has focused on how these losses can be reduced by using photonic integration. In particular, the integration of multiple lasers with the modulator structure was considered as an excellent means of reducing fibre coupling losses while maximising the optical power on chip. A significant difficultly when using multiple integrated lasers in such an arrangement was to ensure coherence between the integrated lasers. The work investigated in this thesis demonstrates for the first time how optical injection locking between discrete lasers on a single photonic integrated circuit (PIC) can be used in the generation of coherent optical signals. This was done by first considering the monolithic integration of lasers and optical couplers to form an on chip optical power splitter, before then examining the behaviour of a mutually coupled system of integrated lasers. By operating the system in a highly asymmetric coupling regime, a stable phase locking region was found between the integrated lasers. It was then shown that in this stable phase locked region the optical outputs of each laser were coherent with each other and phase locked to a common master laser.

Ultralow voltage resonant tunnelling diode electroabsorption modulator

Embedding a double barrier resonant tunnelling diode (RTD) in a unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non- linearity and negative di erential resistance in the current±voltage (I±V) characteristic of the waveguide. This makes the electric ®eld distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley, there is an increase of the electric ®eld across the depleted core. The electric ®eld enhancement in the core-depleted layer causes the Franz±Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption e ect. High-frequency ac signals as low as 100mV can induce electric ®eld high-speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key di erence between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric ®eld across the core-depleted region; the RTD- EAM has in essence an integrated electronic ampli®er and, therefore, requires considerably less switching power.