Influence of convections on dopant segregation in floating-zone crystal-growth system

The steady and axisymmetric crystal growth process of floating zone model was studied numerically to concern with the influence of convection and phase change on effective segregation. An iteration method of numerical simulation considering both thermocapillary and buoyancy effects for GaAs crystal growth gave the effective segregation coefficient, which was compared with the space experiment of GaAs on board the Chinese recoverable satellite. The calculated segregation coefficient of a two-dimensional model was found to be smaller than the one suggested by space experiment with the simplified assumption of an one-dimensional model.

Influence of low-gravity level on crystal-growth in floating-zone

The influence of low gravity level on crystal growth in the floating zone, which involves thermocapillary convection, phase change convection, thermal and solutal diffusion, is investigated numerically by a finite element method for the silicon crystal growth process. The velocity, temperature, concentration fields and phase change interfaces depending on heating temperature and growth rates are analyzed. The influence of low gravity level on the concentration is studied especially. The results show that the non-uniformities of concentration are about 10(-3) for growth rate nu(p) = 5.12 x 10(-8) m/s, 10(-2) for nu(p) = 5.12 x 10(-7) m/s and relatively larger for larger growth rate in the gravity level g = 0-9.8 m/s2. The thermocapillary effect is strong in comparison with the Bridgman system, and the level of low gravity is relatively insensitive for lower growth rates.

Crystal-growth in floating zone with phase-change and thermosolutal convections

Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.

Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Crystal growth and optical properties of Gd1.99-xYxCe.0.01SiO5 single crystals

Gd1.99-xYxCe0.01SiO5 (Ce:GYSO) crystals (x = 0, 0.0995, 0.199) have been grown by the Czochralski (Cz) method. Crystal structure and the distribution coefficients of Ce have been determined for all three crystals. Spectroscopic measurements indicate that optical transmittance and luminescence intensity of Gd1.99-xYxCe0.01SiO5 (x = 0.0995, 0.199) crystals are Substantially higher than those of Ce:Gd2SiO5 (Ce:GSO), especially at x = 0.0995, which makes them good candidate materials for scintillation applications. The particularly important result is that the alloyed Ce:GYSO crystals can be grown easily by the Cz method and, unlike Ce:GSO, they do not undergo cleavage during the growth process or subsequent mechanical treatment. (c) 2005 Elsevier B.V. All rights reserved.

Phi 140 mm sapphire crystal growth by temperature gradient techniques and its color centers

Sapphire crystals, 140 mm in diameter and 90 turn in height, have been grown by temperature gradient techniques (TGT). The growth direction of the boule was fixed by means of Lane X-ray diffraction. A prominent 204 nm absorption band in TGT-Al2O3. which does not appear in single crystals grown by Czochralski method has been studied. Analysis further substantiates the F-center model of this band. Two relatively weaker bands absorbing at 232 nm and 254 nm were ascribed to F+ centers. F-type centers concentration was determined using Smakula's equation. (c) 2005 Elsevier B.V. All rights reserved.

Crystal growth and properties of Yb : FAP laser crystal

A large and transparent Yb:FAP crystal with dimensions up to circle divide 30 mm x 85 mm has been grown by the Czochralski method. The preparation of the raw material has been investigated. X-ray power diffraction studies of Yb:FAP crystal confirm that the as-grown crystal is isostructural with the FAP crystal. The crystalline quality has been studied using X-ray rocking curve analysis. The segregation coefficient of Yb3+ in the Yb:FAP crystal has been also determined. Linear thermal expansion coefficients in [001] and [100] directions have been measured in the 30-800 degrees C temperature range. (c) 2005 Elsevier B.V. All rights reserved.

Optimization of thermal environment during crystal growth of large-sized Nd : YAG by Temperature Gradient Technique

A finite-element model is employed to analysis the thermal environments in Temperature Gradient Technique (TGT) furnace during the growth of large-sized Nd:YAG crystal. The obtained results show that when the crucible is located at the lower position inside of the heater, a flatter solid-liquid interface is established, which makes it easier to obtain the core-free Nd:YAG crystal. Meanwhile, the lower crucible position can induce higher axial temperature gradient, which is beneficial to the release of latent heat. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

Crystal growth and spectral properties of Sm:GdVO4

The 2 at.% Sm:GdVO4 crystal was grown by the Czochralski method. The segregation coefficient of Sm3+ ion in this crystal is 0.98. The crystal structure of the Sm:GdVO4 crystal was determined by X-ray diffraction analysis. Judd-Ofelt theory was used to calculate the intensity parameters (Omega(i)), the spontaneous emission probability, the luminary branching ratio and the radiative lifetime of the state (4)G(5/2). The stimulated emission cross-sections at 567, 604 and 646 nm are calculated to be 5.92 x 10(-21), 7.62 x 10(-21) and 5.88 x 10(-21) cm(2), respectively. The emission cross-section at 604 nm is 4.4 times lager than that in Sm: YAP at 607 nm. (C) 2007 Elsevier B.V. All rights reserved.

Crystal growth of melt-textured Nd-123 under 1% oxygen partial pressure atmosphere

Crystal growth of melt-textured Nd-123 pseudo-crystals was investigated via an isothermal solidification with top-seeding technique under a 1%O2 in N2 atmosphere. Non-steady state solidification was observed at low undercooling, in contrast to an almost linear growth at higher undercooling. Similar to processing in air, the substitution of Nd/Ba was found to decrease from the seed position to the edge of the crystal. In addition, the volume fraction of Nd-422 particles decreased in the solid as solidification proceeded. As a result of these microstructural inhomogeneities, the critical temperature and the critical current density varied within the crystal even for samples processed isothermally, despite the narrow solid solution range of the Nd-123 phase under a reduced pO2 atmosphere.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of crystal growth conditions on morphology of crystalline syndiotactic 1,2-polybutadiene

The crystalline syndiotatic 1,2-polybutadiene was synthesized with a catalyst consisting of iron acetylacetonate (Fe(acac)(3))-triisobutylaluminum (Al(i-Bu)(3))-diethyl phosphite (DEP), and the effects of crystal growth conditions on morphology of thin films of the polymer were investigated by transmission electron microscopy (TEM) and electron diffraction (ED) techniques. The polymer with melting point 179 degreesC was found to have 89.3% 1,2-content and 86.5% syndiotacticity by C-13 NMR measurement. The results of electron microscopic studies indicate that the solution-cast thin films of the syndiotatic 1,2-polybutadiene consist of lath-like lamellae with the c-axis perpendicular to the film plane, while a- and b-axes are in the film plane. The morphology of isothermally crystallized thin films of the polymer is temperature dependent. At lower crystallization temperatures (130 degreesC), a spherulitic structure consisting of flat-on lamellae is formed. With an increase in the crystallization temperature (e.g., at 140 degreesC), the spherulites and single faceted crystals coexist. At higher crystallization temperatures (150 degreesC), single crystals with a hexagonal prismatic shape are produced.