Magnetic properties of the Biâ Srâ CaCuâ Oâ single crystal

The Bi2Sr2CaCu20g single crystal with a superconducting transition temperature equal to 90 ± 2 K was prepared. The irreversibility line of the single crystal for a mgnetic field direction along the c-axis and T* in the ab-plane was determined. The reduced temperature (l - T ) is proportional to H 1.1 for fields below 004 T and proportional to HO.09 for fields above 0.4 T. The zero temperature upper critical field Hc2(0) and coherence length ~ (0) were determined from the magnetization meaurements to be H-lC2=35.9T , H//C2=31.2T, ~c(0)=35.0 A, and ~ab(0)=32.5A,and from the magnetoresistance measurements to be H-lc2 = 134.6T , H//C2=55.5T '~c(0)=38.1 A, and ~ab(0)=2404 A for both directions of the applied magnetic field. The results obtained for Hc2(0) and ~(O) are not reliable due to the rounding that the single crystal exhibits in the magnetization and magnetoresistance curves. The magnetization relaxation of the single crystal was investigated, and was found to be logarithmic in time, and the relaxation rate increases with temperature up to 50 -60 K, then decreases at higher temperatures.

On the equation of state and atomic mean square displacement of crystals

We have presented a Green's function method for the calculation of the atomic mean square displacement (MSD) for an anharmonic Hamil toni an . This method effectively sums a whole class of anharmonic contributions to MSD in the perturbation expansion in the high temperature limit. Using this formalism we have calculated the MSD for a nearest neighbour fcc Lennard Jones solid. The results show an improvement over the lowest order perturbation theory results, the difference with Monte Carlo calculations at temperatures close to melting is reduced from 11% to 3%. We also calculated the MSD for the Alkali metals Nat K/ Cs where a sixth neighbour interaction potential derived from the pseudopotential theory was employed in the calculations. The MSD by this method increases by 2.5% to 3.5% over the respective perturbation theory results. The MSD was calculated for Aluminum where different pseudopotential functions and a phenomenological Morse potential were used. The results show that the pseudopotentials provide better agreement with experimental data than the Morse potential. An excellent agreement with experiment over the whole temperature range is achieved with the Harrison modified point-ion pseudopotential with Hubbard-Sham screening function. We have calculated the thermodynamic properties of solid Kr by minimizing the total energy consisting of static and vibrational components, employing different schemes: The quasiharmonic theory (QH), ).2 and).4 perturbation theory, all terms up to 0 ().4) of the improved self consistent phonon theory (ISC), the ring diagrams up to o ().4) (RING), the iteration scheme (ITER) derived from the Greens's function method and a scheme consisting of ITER plus the remaining contributions of 0 ().4) which are not included in ITER which we call E(FULL). We have calculated the lattice constant, the volume expansion, the isothermal and adiabatic bulk modulus, the specific heat at constant volume and at constant pressure, and the Gruneisen parameter from two different potential functions: Lennard-Jones and Aziz. The Aziz potential gives generally a better agreement with experimental data than the LJ potential for the QH, ).2, ).4 and E(FULL) schemes. When only a partial sum of the).4 diagrams is used in the calculations (e.g. RING and ISC) the LJ results are in better agreement with experiment. The iteration scheme brings a definitive improvement over the).2 PT for both potentials.

Systematics of properties of the electron gas in deep-etched quantum wires

An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods.

Growth and characterisation of tin dichalcogenide crystals

During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as stronglybonded two dimensional chalcogen-metal-chalcogen layers which are loosely coupled to one another by the weak van der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and Snsea). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystalstructure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. Aitin atom is surrounded by six chalcogen atoms octahedrally. In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding.

Systematic study of the static electrical properties of the CO molecule: influence of the basis set size and correlation energy

The influence of the basis set size and the correlation energy in the static electrical properties of the CO molecule is assessed. In particular, we have studied both the nuclear relaxation and the vibrational contributions to the static molecular electrical properties, the vibrational Stark effect (VSE) and the vibrational intensity effect (VIE). From a mathematical point of view, when a static and uniform electric field is applied to a molecule, the energy of this system can be expressed in terms of a double power series with respect to the bond length and to the field strength. From the power series expansion of the potential energy, field-dependent expressions for the equilibrium geometry, for the potential energy and for the force constant are obtained. The nuclear relaxation and vibrational contributions to the molecular electrical properties are analyzed in terms of the derivatives of the electronic molecular properties. In general, the results presented show that accurate inclusion of the correlation energy and large basis sets are needed to calculate the molecular electrical properties and their derivatives with respect to either nuclear displacements or/and field strength. With respect to experimental data, the calculated power series coefficients are overestimated by the SCF, CISD, and QCISD methods. On the contrary, perturbation methods (MP2 and MP4) tend to underestimate them. In average and using the 6-311 + G(3df) basis set and for the CO molecule, the nuclear relaxation and the vibrational contributions to the molecular electrical properties amount to 11.7%, 3.3%, and 69.7% of the purely electronic μ, α, and β values, respectively

Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

(1-x)PMN-xPT ceramics prepared by conventional and modified columbite route: Effect on electrical properties

This study aims to demonstrate how the chemical homogeneity of B cations affects the microstructure and electrical responses of (1-x) PMN-xPT ceramics. Two methodologies were employed to synthesize three different compositions, with x assuming the values 0.10, 0.28, and 0.35. If compared to conventional method, the Ti-modified columbite route, which is characterized by higher B cation homogeneity, leads to PMN-PT powders and ceramics with lower content of PNT pyrochlore phase and, for 0.65PMN-0.35PT composition, minor amount of tetragonal phase is found. Conclusively, PMN-PT ceramics obtained by modified route favors B cations homogeneity, enhancing the dielectric, ferroelectric and piezoelectric properties.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of magnesium on structure and properties of LiNbO3 prepared from polymeric precursors

The effect of magnesium addition on the phase formation and electric properties of LiNbO3 powder prepared from polymeric precursor was analyzed. It was shown that the unit-cell volume of the rhombohedral phase decreased with increasing magnesium concentration. Small amounts of secondary phases were observed in LiNbO3 powder doped with 5 and 10 mol% Mg+2. These results indicated that the Mg+2 ion was substituted for niobium ion in the rhombohedral phase. The addition of Mg+2 promotes densification of LiNbO3 ceramics. It was noticed that the increase in additive concentration leads to a decrease of electric properties, K-p and d(33). This is due to formation of LiNb3O8 and MgNb2O6 phases at the grain boundaries. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Electric measurements with constant current: A practical method for characterizing dielectric films

This article assesses the use of the constant current (CC) method for characterizing dielectric films. The method is based on charging the sample with a constant current (current stress) and measuring the corresponding voltage rise under the closed circuit condition. Our article shows that the CC method is an alternative to the constant voltage stressing method to study the electric properties of nonpolar, ferroelectric, and polar polymers. The method was tested by determining the dielectric constant of polytetrafluoroethylene, and investigating the electric conduction in poly(ethylene terephthalate). For the ferroelectric polymer poly(vinylidene fluoride), it is shown that hysteresis loops and the dependence of the ferroelectric polarization on the electric field can be obtained. (C) 2001 American Institute of Physics.

Grain boundary electric characterization of Zn7Sb2O12 semiconducting ceramic: A negative temperature coefficient thermistor

The electrical properties of the grain boundary region of electroceramic sensor temperature based on inverse spinel Zn7Sb2O12 were investigated at high temperature. The zinc antimoniate was synthesized by a chemical route based on the modified Pechini method. The electric properties of Zn7Sb2O12 were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from 250 up to 600 degreesC. The grain boundary conductivity follows the Arrhenius law, with two linear branches of different slopes. These branches exhibit activation energies with very similar values; the low-temperature (less than or equal to350 degreesC) and high-temperature (greater than or equal to400 degreesC) regions are equal to 1.15 and 1.16 eV, respectively. Dissimilar behavior is observed on the relaxation time (tau) curve as a function of temperature, where a single slope is identified. The negative temperature coefficient parameters and nature of the polarization phenomenon of the grain boundary are discussed. (C) 2003 American Institute of Physics.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics

In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved.

Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films

This work reports the preparation and characterization of (SnO2) thin films doped with 7 mol% Sb2O3. The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 x 10(-3) Omega cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.