Systematics of properties of the electron gas in deep-etched quantum wires
Data(s) |
24/12/2009
24/12/2009
1996
|
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Resumo |
An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. |
Formato |
11 p. application/pdf |
Identificador |
0163-1829 http://hdl.handle.net/2445/10466 146885 |
Idioma(s) |
eng |
Publicador |
The American Physical Society |
Relação |
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.54.11386 Physical Review B, 1996, vol. 54, núm. 11, p. 11386-11396 |
Direitos |
(c) The American Physical Society, 1996 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Superfícies (Física) #Semiconductors #Propietats elèctriques #Surfaces (Physics) #Semiconductors #Electric properties |
Tipo |
info:eu-repo/semantics/article |