Systematics of properties of the electron gas in deep-etched quantum wires


Autoria(s): Martorell Domenech, Juan; Sprung, Donald W. L.
Data(s)

24/12/2009

24/12/2009

1996

Resumo

An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods.

Formato

11 p.

application/pdf

Identificador

0163-1829

http://hdl.handle.net/2445/10466

146885

Idioma(s)

eng

Publicador

The American Physical Society

Relação

Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.54.11386

Physical Review B, 1996, vol. 54, núm. 11, p. 11386-11396

Direitos

(c) The American Physical Society, 1996

info:eu-repo/semantics/openAccess

Palavras-Chave #Superfícies (Física) #Semiconductors #Propietats elèctriques #Surfaces (Physics) #Semiconductors #Electric properties
Tipo

info:eu-repo/semantics/article