Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method


Autoria(s): Simões, Alexandre Zirpoli; Ramirez, M. A.; Riccardi, C. S.; Longo, Elson; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/12/2008

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Strontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS.

Formato

1951-1957

Identificador

http://dx.doi.org/10.1016/j.solidstatesciences.2008.03.027

Solid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008.

1293-2558

http://hdl.handle.net/11449/9414

10.1016/j.solidstatesciences.2008.03.027

WOS:000262236800044

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Solid State Sciences

Direitos

closedAccess

Palavras-Chave #Thin films #Atomic force microscopy #Dielectric properties
Tipo

info:eu-repo/semantics/article