Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/12/2008
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Resumo |
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Strontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS. |
Formato |
1951-1957 |
Identificador |
http://dx.doi.org/10.1016/j.solidstatesciences.2008.03.027 Solid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008. 1293-2558 http://hdl.handle.net/11449/9414 10.1016/j.solidstatesciences.2008.03.027 WOS:000262236800044 |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Relação |
Solid State Sciences |
Direitos |
closedAccess |
Palavras-Chave | #Thin films #Atomic force microscopy #Dielectric properties |
Tipo |
info:eu-repo/semantics/article |