Microchanneled chirped fiber Bragg grating formed by femto-second laser aided chemical etching for refractive index and temperature measurements

In this work, a microchanneled chirped fiber Bragg grating (MCFBG) is proposed and fabricated through the femtosecond laser-assisted chemical etching. The microchannel (~550 µm) gives access to the external index liquid, thus inducing refractive index (RI) sensitivity to the structure. In the experiment, the transmission bands induced by the reduced effective index in the microchannel region were used to sense the surrounding RI and temperature changes. The experimental results show good agreement with the theoretical analysis. The proposed MCFBG offers enhanced RI sensitivity without degrading the robustness of the device showing good application potential as bio-chemical sensors.

Fabrication of micro-channels in optical fibers using femtosecond laser pulses and selective chemical etching

The fabrication of micro-channels in single-mode optical fibers is demonstrated using focused femtosecond laser processing and chemical etching. Straight line micro-channels are achieved based on a simple technique which overcomes limitations imposed by the fiber curved surface.

Microchanneled chirped fiber Bragg grating formed by femto-second laser aided chemical etching for refractive index and temperature measurements

In this work, a microchanneled chirped fiber Bragg grating (MCFBG) is proposed and fabricated through the femtosecond laser-assisted chemical etching. The microchannel (~550 µm) gives access to the external index liquid, thus inducing refractive index (RI) sensitivity to the structure. In the experiment, the transmission bands induced by the reduced effective index in the microchannel region were used to sense the surrounding RI and temperature changes. The experimental results show good agreement with the theoretical analysis. The proposed MCFBG offers enhanced RI sensitivity without degrading the robustness of the device showing good application potential as bio-chemical sensors.

Fabrication of micro-channels in optical fibers using femtosecond laser pulses and selective chemical etching

The fabrication of micro-channels in single-mode optical fibers is demonstrated using focused femtosecond laser processing and chemical etching. Straight line micro-channels are achieved based on a simple technique which overcomes limitations imposed by the fiber curved surface. © 2005 Optical Society of America.

Liquid core fibre Bragg grating based refractive index sensor formed by femtosecond assisted chemical etching technique

We report the fabrication of a refractive index (RI) sensor based on a liquid core fibre Bragg grating (FBG). A micro-slot FBG was created in standard telecom optical fibre employing the tightly focused femtosecond laser inscription aided chemical etching. A micro-slot with dimensions of 5.74(h) × 125(w) × 1388.72(l) μm was engraved across the whole fibre and along 1mm long FBG which gives advantage of a relatively robust liquid core waveguide. The device performed the refractive index sensitivity up to about 742.72 nm/RIU. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Analysis of depth of the microporosity in a nickel-chromium system alloy: effects of electrolytic, chemical and sandblasting etching

The present study was designed to analyse the average depth of the microporosity of a nickel-chromium (Ni-Cr) system alloy (Verabond II). The metal surface was subject to one of the following surface treatment: (i) Electrolytic etching in nitric acid 0.5 N at a current density of 250 mA cm(-2) ; (ii) chemical etching with CG-Etch etchant; and (iii) Sandblasting with alumina particles 50 mum. Half of the samples were polished before the surface treatments. The depth of porosity was measured through photomicrographs (500x) with a profilometer, and the data were statistically analysed using an analysis of variance (anova) followed by Tukey's test. The conclusions were (i) Differents surface treatment of the Ni-Cr system alloy lead to different depths of microporosity; (ii) the greatest depth of porosity was observed in non-polished alloy; (iii) the greatest and identical depth of microporosity was observed following electrolytic etching and chemical etching; (iv) the least and identical depth of microporosity was observed with chemical etching and sandblasting with alumina particles 50 mum, and (v) Chemical etching showed an intermediary depth.

Phase Transformation Introduced by Mechanical and Chemical Surface Preparations of Tetragonal Zirconia Polycrystals

Cutting of Y2O3-doped TZP rods by a low-speed diamond saw introduces an unidentified, metastable phase X (x-ZrO2) coexisting with the tetragonal (t-ZrO2) and the monoclinic (m-ZrO2) phases initially present in the sample. Further mechanical deformation of the cut surface by indentation or polishing sustains the x-ZrO2. Chemical etching removes the x-ZrO2 and increases the m-ZrO2content.

Growth, etching morphology and spectra of LiAlO2 crystal

gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers

Bulk samples of tellurite glass with composition 75TeO(2)-20ZnO-5Na(2)O (TZN) were fabricated by melting and quenching techniques. In order to improve the surface quality of optical fiber preform made with this tellurite glass, the authors developed a multistage etching process. The relationship between successive etching treatments and roughness of the TZN glass surface was probed by using an atomic force microscope. The results demonstrate that this multistage etching method effectively improves this tellurite glass surface smoothness to a level comparable with that of a reference silica glass slide, and the corresponding chemical micromechanisms and fundamentals are discussed and confirmed by atomic force microscopy, potentially contributing to the development of multicomponent soft glass fibers and devices. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3437017]

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

Effects of Etching on Zircon Grains and Its Implications for the Fission Track Method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Controlled growth of carbon nanotubes for electronic and photovoltaic applications

Carbon nanotubes (CNTs), experimentally observed for the first time twenty years ago, have triggered an unprecedented research effort, on the account of their astonishing structural, mechanical and electronic properties. Unfortunately, the current inability in predicting the CNTs’ properties and the difficulty in controlling their position on a substrate are often limiting factors for the application of this material in actual devices. This research aims at the creation of specific methodologies for controlled synthesis of CNTs, leading to effectively employ them in various fields of electronics, e.g. photovoltaics. Focused Ion Beam (FIB) patterning of Si surfaces is here proposed as a means for ordering the assembly of vertical-aligned CNTs. With this technique, substrates with specific nano-structured morphologies have been prepared, enabling a high degree of control over CNTs’ position and size. On these nano-structured substrates, the growth of CNTs has been realized by chemical vapor deposition (CVD), i.e. thermal decomposition of hydrocarbon gases over a heated catalyst. The most common materials used as catalysts in CVD are transition metals like Fe and Ni; however, their presence in the CNT products often results in shortcomings for electronic applications, especially for those based on silicon, being the metallic impurities incompatible with very-large-scale integration (VLSI) technology. In the present work the role of Ge dots as an alternative catalysts for CNTs synthesis on Si substrates has been thoroughly assessed, finding a close connection between the catalytic activity of such material and the CVD conditions, which can affect both size and morphology of the dots. Successful CNT growths from Ge dots have been obtained by CVD at temperatures ranging from 750 to 1000°C, with mixtures of acetylene and hydrogen in an argon carrier gas. The morphology of the Si surface is observed to play a crucial role for the outcome of the CNT synthesis: natural (i.e. chemical etching) and artificial (i.e. FIB patterning, nanoindentation) means of altering this morphology in a controlled way have been then explored to optimize the CNTs yield. All the knowledge acquired in this study has been finally applied to synthesize CNTs on transparent conductive electrodes (indium-tin oxide, ITO, coated glasses), for the creation of a new class of anodes for organic photovoltaics. An accurate procedure has been established which guarantees a controlled inclusion of CNTs on ITO films, preserving their optical and electrical properties. By using this set of conditions, a CNTenhanced electrode has been built, contributing to improve the power conversion efficiency of polymeric solar cells.

Time dependent superhydrophobicity of drag reducing surfaces

Air can be trapped on the crevices of specially textured hydrophobic surfaces immersed in water. This heterogenous state of wetting in which the water is in contact with both the solid surface and the entrapped air is not stable. Diffusion of air into the surrounding water leads to gradual reduction in the size and numbers of the air bubbles. The sustainability of the entrapped air on such surfaces is important for many underwater applications in which the surfaces have to remain submersed for longer time periods. In this paper we explore the suitability of different classes of surface textures towards the drag reduction application by evaluating the time required for the disappearance of the air bubbles under hydrostatic conditions. Different repetitive textures consisting of holes, pillars and ridges of different sizes have been generated in silicon, aluminium and brass by isotropic etching, wire EDM and chemical etching respectively. These surfaces were rendered hydrophobic with self-assembled layer of fluorooctyl trichlorosilane for silicon and aluminium surfaces and 1-dodecanethiol for brass surfaces. Using total internal reflection the air bubbles are visualized with the help of a microscope and time lapse photography. Irrespective of the texture, both the size and the number of air pockets were found to decrease with time gradually and eventually disappear. In an attempt to reverse the diffusion we explore the possibility of using electrolysis to generate gases at the textured surfaces. The gas bubbles are nucleated everywhere on the surface and as they grow they coalesce with each other and get pinned at the texture edges.