Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Oxygen precipitation in Czochralski grown silicon heat treated at 525 degrees C

The diffusion of interstitial oxygen In silicon at 525 degrees C is studied using time-of-flight small-angle neutron scattering (SANS) to separate the elastic scattering from oxygen-containing aggregates from the inelastic scattering from neutron-phonon interactions. The growth of oxygen-containing aggregates as a function of time gives a diffusion coefficient, D, calculated from Ham's theory, that is I factor of similar to 3.8 +/- 1.4 times higher than that expected by extrapolation of higher and lower temperature data (D = 0.13 exp(-2.53 eV kT(-1)) cm(2) s(-1)). This result confirms previous observations of enhanced diffusion at intermediate temperatures (400 degrees C-650 degrees C) although the magnitude of the enhancement we find is Much smaller than that reported by some others.

Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

Ce-doped and undoped LiCaAlF6 (LiCAF) single crystals 50 mm in diameter were grown by the Czochralski technique. The formation of inclusions and cracks accompanying the crystal growth was investigated. The dependence of lattice parameters on the temperature was measured for LiCAF and LiSrAlF6 single crystals. Linear thermal expansion coefficients for both these crystals were evaluated. Higher transmission properties for LiCAF single crystals were achieved in the UV and VUV wavelength regions. (C) 2001 Elsevier B.V. B.V. All rights reserved.

LSSA large area silicon sheet task continuous Czochralski process development : quarterly report no. 1, October-December, 1977 /

Includes bibliographical references.

Mittauslaitteiston suunnittelu piidiodien vuotovirtamittauksiin matalissa lämpötiloissa

Tässä työssä on suunniteltu mittauslaitteisto ja toteutettu diodien vuotovirtamittaukset matalissa lämpötiloissa. Suunnittelun pääpaino oli tuottaa mittauslaitteisto, joka kestäisi mittausolosuhteitten matalan lämpötilan (80 K) ja toisaalta myös lämpötilavaihtelut huoneen lämpötilasta mataliin lämpötiloihin. Lisäksi mittauslaitteiston oli kestettävä myös tutkimusprojektin myöhemmissä vaiheissa mukaan tulevaa protonisäteilytystä, mikä asetti omat valintaperusteensa materiaaleille. Mittauslaitteiston kohinaa pyrittiin vaimentamaan kontaktipintojen kultapinnoitteilla ja kiinnittämällä huomiota virtajohtimien eristyksiin. Työssä mitattiin erilailla prosessoitujen piidiodien vuotovirtoja eri lämpötiloissa. Mitatut diodit olivat sekä etukäteen säteilytettyjä että säteilyttämättömiä ja työn yhtenä päämääränä oli verrata säteilytyksen vaikutuksia vuotovirran lämpötilakorrelaatioon. Diodien piimateriaaleja oli valmistettu magneettisella Czochralski-menetelmällä sekä Float Zone-menetelmällä, lisäksi osaa diodeista oli muokattu erilaisilla lämpökäsittelyillä parempien säteilynkesto-ominaisuuksien aikaansaamiseksi. Mittauksissa diodin lämpötila laskettiin jäähdytyslaitteistolla systeemin minimilämpötilaan ja diodin ominaiskäyrä mitattiin välillä 0-450 V. Lämpötilaa nostettiin asteittain ja ominaiskäyrät mitattiin määrätyissä lämpötiloissa, minkä jälkeen tuloksia verrattiin teoreettisiin arvioihin vuotovirran lämpötilakäyttäytymisestä. Tulosten perusteella voidaan todeta teoreettisten arvojen vastaavan kokeellisia, mittauslaitteiston erottelukyvyn kynnykselle asti (10-11A), mutta tämän jälkeen mahdollinen lämpötilan laskun aiheuttama virranlasku hukkuu mittalaitteiston kohinan sekaan. Säteilytettyjen diodien kohdalla lämpötilan laskeminen madalsi vuotovirtaa 6 dekadia huoneenlämmöstä 190 K lämpötilaan, kunnes mittauskynnys ylittyi. Säteilyttämättömillä diodeilla vuotovirta oli jo huoneenlämpötilassa erittäin pientä ja lämpötilan laskiessa minimiarvoonsa vuotovirta pieneni n. 2 dekadia, kunnes mittalaitteiston mittatarkkuus tuli vastaan.

Position-sensitive silicon strip detector characterization using particle beams

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution. They are widely used in many high-energy physics experiments. Modern high energy physics experiments impose harsh operation conditions on the detectors, e.g., of LHC experiments. The high radiation doses cause the detectors to eventually fail as a result of excessive radiation damage. This has led to a need to study radiation tolerance using various techniques. At the same time, a need to operate sensors approaching the end their lifetimes has arisen. The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal, measurement apparatuses are built. The devices are then used to measure the properties of irradiated detectors. The measurement data are analyzed, and conclusions are drawn. Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle accelerator and one telescope measuring the tracks of cosmic particles. The telescopes comprise layers of reference detectors providing the reference track, slots for the devices under test, the supporting mechanics, electronics, software, and the trigger system. All three devices work. The differences between these devices are discussed. The reconstruction of the reference tracks and analysis of the device under test are presented. Traditionally, silicon detectors have produced a very clear response to the particles being measured. In the case of detectors nearing the end of their lifefimes, this is no longer true. A new method benefitting from the reference tracks to form clusters is presented. The method provides less biased results compared to the traditional analysis, especially when studying the response of heavily irradiated detectors. Means to avoid false results in demonstrating the particle-finding capabilities of a detector are also discussed. The devices and analysis methods are primarily used to study strip detectors made of Magnetic Czochralski silicon. The detectors studied were irradiated to various fluences prior to measurement. The results show that Magnetic Czochralski silicon has a good radiation tolerance and is suitable for future high-energy physics experiments.

Numerical Analysis of LEC Growth of GaAs with an Axial Magnetic Field

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Cz法大型砷化镓单晶生长中熔体流动和传热

采用低雷诺数k-ε模型，计算分析了Cz法大型砷化镓单晶生长中熔体 内的热量、动量输支特性。结果表明：适当的坩埚旋转能有效抑制晶体旋转产生的对流和浮力对流，增长晶体转速能使晶体/熔体界面附近等温线更加平直，适当的坩埚、晶体转速匹配能够抑止晶体/熔体界面附近的温度波动，热毛细力对强烈熔体流动的影响可以忽略不计，但对较弱的熔体流动影响较大。文中还给出了较为适宜的坩埚、晶体转速匹配方式。研究结果为生长高质量大型砷化镓单晶提供了有重要价值的数值依据。

熔液法晶体生长流场的数值模拟(英文)

本文给出了对二种熔液法生长晶体的液相流场进行的计算机模拟的结果,对CZ法晶体生长的定常流场数值计算,采用了二阶迎风QUICK差分格式的有限控制体积法,通过对12种不同参数的流场情况所作的计算表明,二阶QUICK格式具有更高的计算精度和数值稳定性。对离心机环境下的水平Bridgman晶体生长的流场进行了三维非定常的数值模拟。结果表明,在一定的旋转方向和旋转速率条件下,离心机环境中的Coriolis力对熔体振荡流动有致稳作用。计算结果符合以往实验的发现,并优于二维非定常模拟结果。

Crystal growth and optical properties of Gd1.99-xYxCe.0.01SiO5 single crystals

Gd1.99-xYxCe0.01SiO5 (Ce:GYSO) crystals (x = 0, 0.0995, 0.199) have been grown by the Czochralski (Cz) method. Crystal structure and the distribution coefficients of Ce have been determined for all three crystals. Spectroscopic measurements indicate that optical transmittance and luminescence intensity of Gd1.99-xYxCe0.01SiO5 (x = 0.0995, 0.199) crystals are Substantially higher than those of Ce:Gd2SiO5 (Ce:GSO), especially at x = 0.0995, which makes them good candidate materials for scintillation applications. The particularly important result is that the alloyed Ce:GYSO crystals can be grown easily by the Cz method and, unlike Ce:GSO, they do not undergo cleavage during the growth process or subsequent mechanical treatment. (c) 2005 Elsevier B.V. All rights reserved.