重离子~(12)C对~(60)Coγ射线诱发人染色体畸变效应的比较研究

目的　重离子和高剂量率6 0 Coγ射线照射离体人血建立染色体畸变的剂量 效应曲线 ;比较重离子1 2 C照射与6 0 Coγ射线照射诱发染色体畸变的相对生物效能。方法　重离子1 2 C和6 0 Coγ射线照射离体人血 ,吸收剂量率为 3Gy min ,吸收剂量为 1 0～ 8 0Gy。主要记录染色体型畸变的非稳定性畸变 ,对双着丝粒体和着丝粒环做曲线拟合 ,并检验回归系数的显著性和曲线的拟合度。结果　重离子1 2 C和6 0 Coγ射线照射离体血诱发的染色体畸变 (双 +环 ) ,在 0～ 8Gy范围内 ,呈良好的剂量 效应关系。1 2 C离子诱发染色体畸变的RBE值是不恒定的 ,它随吸收剂量增加而减少 ,在 0 3～ 8 0Gy范围内 ,RBE值 (Dγ Dc)从 2 6 2到 1 0 0 ,平均 1 5 8。结论　1 2 C离子对6 0 Coγ射线照射诱发染色体畸变 ,在照射剂量较低时 ,有较高的生物效应。

Kinetic energies of C-n(+) (n <= 58) fragment ions produced by nanosecond laser impact on C-60

Laser-induced fragmentation of C-60 has been studied using a time-of-flight mass spectrometric technique. The average kinetic energies of fragment ions C-n(+) (n <= 58) have been extracted from the measured full width at half maximum (FWHM) of ion beam profiles. The primary formation mechanism of small fragment ion C-n(+) (n < 30) is assumed to be a two-step fragmentation process: C60 sequential decay to unstable C-30(+) ion and the binary fission of C-30(+). Considering a second photo absorption process in the later part of laser pulse duration, good agreement is achieved between experiment and theoretical description of photoion formation. (C) 2009 Elsevier B. V. All rights reserved.

Molecular vibration spectroscopy study of irradiation effect in C-60 films induced by low energy ion

Irradiation effect in C-60 films induced by 170 keV B ion was investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies. The damage cross section sigma and the effective damage radius R are deduced from the experimental data of all four IR active modes and evident four Raman active modes of C-60 molecule. The differences on irradiation sensitivity and structural stability of the different active modes of C-60 molecule are compared. The results indicate that T-1u (4) of infrared active mode and A(g) (1) of Raman active mode are most sensitive for B ion irradiation. On the other hand T-1u (2) of infrared active mode and H-g (3) of Raman active mode are comparatively stable under B ion irradiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512968]

Structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions

The structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions is investigated. The irradiated C-60 films were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Raman scattering technique. The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C-60 molecule and damage of C-60 films; different vibration modes of C-60 molecule have different irradiation sensitivities; the mean efficient damage radius obtained from experimental data is about 1.47 nm, which is in good agreement with thermal spike model prediction.

Synthesis and identification of Heterocyclic derivatives of fullerene C-60: Unexpected reaction of anionic C-60 with benzonitrile

During the reaction of reduced C-60 with benzyl bromide in benzonitrile, a novel cis-1 C-60 adduct, 1,4-dibenzyl-2,3-cyclic phenylimidate C-60 (1), Was obtained rather than the expected product of 1,4-dibenzyl C-60. The structure of compound 1 was analyzed by X-ray single-crystal diffraction, identifying the presence of a five-membered heterocycle at a [5,6] bond of C-60. One of the heteroatoms is assigned as a nitrogen atom; however, the identity of the other heteroatom cannot be determined unambiguously by crystallography due to similarity between the nitrogen and oxygen atoms.

C-60 trianion-mediated electrocatalysis and amperometric sensing of hydrogen peroxide

Heterogeneous electrocatalytic reduction of hydrogen peroxide (H2O2) by C-60 is reported for the first time. C-60 is embedded in tetra octyl ammonium bromide (TOAB) film and is characterized by scanning electron microscopy and cyclic voltammetry. Electrocatalytic studies show that the trianion of C-60 mediates the electrocatalytic reduction of H2O2 in aqueous solution containing 0.1 M KCl. Application of such film modified electrode as an amperometric sensor for H2O2 determination is also examined.

Reducing HAuCl4 by the C-60 dianion: C-60-directed self-assembly of gold nanoparticles into novel fullerene bound gold nanoassemblies

The C-60 dianion is used to reduce tetrachloroauric acid (HAuCl4) for the first time; three-dimensional C-60 bound gold (Au-C-60) nanoclusters are obtained from C-60-directed self-assembly of gold nanoparticles due to the strong affinities of Au-C-60 and C-60-C-60. The process was monitored in situ by UV-vis-NIR spectroscopy. The resulting Au-C-60 nanoclusters were characterized using transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), x-ray powder diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and FT-IR and Raman spectroscopies.

Efficient inverted top-emitting organic light-emitting diodes using ultrathin MoO3/C-60 bilayer structure to enhance hole injection

Efficient inverted top-emitting organic light-emitting diodes with aluminum (Al) as both the cathode and semitransparent anode are investigated. It is found that introduction of the ultrathin molybdenum trioxide (MoO3)/fullerene (C-60) bilayer structure between the low work function Al top anode and the hole-transporting layer dramatically enhances the device performance as compared to the devices with sole MoO3 or C-60 buffer layer. The ultraviolet photoemission spectroscopy and x-ray photoelectron spectroscopy indicate that the hole injection barrier between Al anode and hole-transporting layer is effectively reduced via strong dipole effect at Al/MoO3/C-60 interfaces with its direction pointing from Al to C-60.

Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction

In this paper, we report the fabrication of permeable metal-base organic transistors based on N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/C-60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively.