Transparent oxide semiconductors for advanced display applications

The article discusses the progress and issues related to transparent oxide semiconductor (TOS) TFTs for advanced display and imaging applications. Amorphous oxide semiconductors continue to spark new technological developments in transparent electronics on a multitude of non-conventional substrates. Applications range from high-frame-rate interactive displays with embedded imaging to flexible electronics, where speed and transparency are essential requirements. TOS TFTs exhibit high transparency as well as high electron mobility even when fabricated at room temperature. Compared to conventional a-Si TFT technology, TOS TFTs have higher mobility and sufficiently good uniformity over large areas, similar in many ways to LTPS TFTs. Moreover, because the amorphous oxide semiconductor has higher mobility compared to that of conventional a-Si TFT technology, this allows higher-frame-rate display operation. This would greatly benefit OLED displays in particular because of the need for lower-cost higher-mobility analog circuits at every subpixel.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Demonstration of multi-casting in a 1 × 9 LCOS wavelength selective switch

A multi-functional 1 × 9 wavelength selective switch based on liquid crystal on silicon (LCOS) spatial light modulator technology and anamorphic optics was tested at a channel spacing of 100 and 200 GHz, including dynamic data measurements on both single beam deflection and multi-casting to two ports. The multi-casting holograms were optimized using a modified Gerchberg-Saxton routine to design the core hologram, followed by a simulated annealing routine to reduce crosstalk at non-switched ports. The effect of clamping the magnitude of phase changes between neighboring pixels during optimization was investigated, with experimental results for multi-casting to two ports resulting in a signal insertion loss of-7.6 dB normalized to single port deflection, a uniformity of ±0.6%, and a worst case crosstalk of-19.4 dB, which can all be improved further by using a better anti-reflection coating on the LCOS SLM coverplate and other measures. © 2013 IEEE.

Design, fabrication, and characterization of circular Dammann gratings based on grayscale lithography.

We describe the design, fabrication, and experimental demonstration of a circular Dammann grating element generating a point-spread function of two concentric rings with equal intensity. The element was fabricated using grayscale lithography, providing a smooth and accurate phase profile. As a result, we obtained high diffraction efficiency and good uniformity between the two rings.

Reproducibility of self-compacting concrete batches between two different EU laboratories

Self Compacting Concrete (SCC) offers a wide variety of advantages during casting. Considering the worldwide uniformity of guidelines concerning the composition and casting instructions for the production of fresh SCC, there is a need to explore the reproducibility of similar self-compacting concrete batches between different countries. In the present study, the fresh properties of similar SCC batches produced in two different laboratories of the European Union are being compared and evaluated.

Enduring Borderlands: the Marches of Ireland and Wales in the Early Modern Period

This joint chapter explores similarities and differences between two borderlands within the early modern ‘British’ state – the marches of Ireland and Wales. In some respects, the two regions were very different, most fundamentally because the Irish march remained militarised throughout the Tudor period, while Welsh society was markedly more peaceful. However, there was also much in common. In the later middle ages both marches were frontiers between the expanding Anglo-Normans and native Celtic society. The notion that the march separated ‘civility’ from ‘savagery’ was an enduring one: despite the efforts of the Tudors to impose centralisation and uniformity throughout its territories, there remained institutions, structures of power, and mentalities which ensured that both sets of marches were still in existence by the end of the 16th century. This chapter explores the reasons for the endurance of these borderlands, and indicates how political reforms of the 16th century caused the perception – and sometimes the very location – of the marches to alter.

Morphology, biometry and distribution of Difflugia biwae Kawamura, 1918 (Protozoa : Rhizopoda)

The freshwater testate amoeba Difflugia biwae Kawamura, 1918, isolated from Mulan Lake, Hubei Province, China is investigated using light microscopy and scanning electron microscopy. The morphology, biometry and distribution of this little known species are supplied. After careful comparison with three other similar species, including D. delicatula Gauthier-Livre et Thomas, D. elegans Penard and D. oblonga caudata Stepanek, we believe that the characteristics of smooth fusiform shell, conspicuous great collar flare (always larger than body-width) around the aperture, constriction behind the aperture and a somewhat curved aboral horn set D. biwae apart from all other Difflugia species. This species shows a great diversity in total length, collar height and aboral horn length which have high variability (CV between 11.76 and 24.52). However, body width, collar diameter, neck width, body length and aperture diameter are fairly constant with low variability (CV between 5.34 and 8.79) which shows a remarkable uniformity of D. biwae. Also, the size frequency distributions of both body width and body length yield bell-shaped (normally distributed) curves and indicate that D. biwae is a size-monomorphic species, characterized by a main-size class and a small size range. D. biwae is probably endemic to East Asia (China and Japan) because it has such a large size (165-306 mu m) that it would have been easily found in Europe and North America, if it were there. Consequently, D. biwae must have a restricted geographical distribution, disproving the old hypothesis that microscopic organisms are cosmopolitan.

Development of a turning mid turbine frame with embedded design-part I: Design and steady measurements

© 2014 by ASME. The paper presents a new setup for the two-stage two-spool facility located at the Institute for Thermal Turbomachinery and Machine Dynamics (ITTM) of Graz University of Technology. The rig was designed in order to simulate the flow behavior of a transonic turbine followed by a counter-rotating low pressure (LP) stage like the spools of a modern high bypass aeroengine. The meridional flow path of the machine is characterized by a diffusing S-shaped duct between the two rotors. The role of turning struts placed into the mid turbine frame is to lead the flow towards the LP rotor with appropriate swirl. Experimental and numerical investigations performed on the setup over the last years, which were used as baseline for this paper, showed that wide chord vanes induce large wakes and extended secondary flows at the LP rotor inlet flow. Moreover, unsteady interactions between the two turbines were observed downstream of the LP rotor. In order to increase the uniformity and to decrease the unsteady content of the flow at the inlet of the LP rotor, the mid turbine frame was redesigned with two zero-lifting splitters embedded into the strut passage. In this first part of the paper the design process of the splitters and its critical points are presented, while the time-averaged field is discussed by means of five-hole probe measurements and oil flow visualizations. The comparison between the baseline case and the embedded design configuration shows that the new design is able to reduce the flow gradients downstream of the turning struts, providing a more suitable inlet condition for the low pressure rotor. The improvement in the flow field uniformity is also observed downstream of the turbine and it is, consequently, reflected in an enhancement of the LP turbine performance. In the second part of this paper the influence of the embedded design on the time-resolved field is investigated.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

MOCVD growth of InN using a GaN buffer

We have investigated MOCVD growth of InN oil sapphire with and without a GaN buffer between 490 and 520 degrees C. The buffer significantly improves the surface morphological uniformity and electrical properties of InN epilayers. Characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. Below 520 degrees C, increasing temperature improves structural quality but degrades electrical properties. Hall data from this study Suggest that V-N-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. We believe that reducing carrier concentration and dislocation density is effective to increase the Hall mobility of InN. (C) 2007 Elsevier Ltd. All rights reserved.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 mu m, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 mu m. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.