1000 resultados para applied physics


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The dielectric measurement of ferroelectric trissarcosine calcium chloride (TSCC) was made under various pressures up to 6 kbar. A striking decrease in the peak value of the permittivity, epsilon r, at the transition temperature, Tc, was observed with increasing pressure. The value of Tc increases linearly with a pressure coefficient dTc/dp=11.1K kbar-1 at low pressures. This increase in Tc supports the suggestion that the ferroelectric transition is of the pure order-disorder type. It is suggested on the basis of the behaviour of epsilon r with pressure that the order of the ferroelectric transition changes from second to first order on application of pressure.

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By choosing appropriate microemulsion systems, hexagonal cobalt (Co) and cobalt-nickel (1:1) alloy nanoparticles have been obtained with cetyltrimethylammonium bromide as a cationic surfactant at 500 degrees C. This method thus stabilizes the hcp cobalt even at sizes (<10 nm) at which normally fcc cobalt is predicted to be stable. On annealing the hcp cobalt nanoparticles in H-2 at 700 degrees C we could transform them to fcc cobalt nanoparticles. Microscopy studies show the formation of spherical nanoparticles of hexagonal and cubic forms of cobalt and Co-Ni (1:1) alloy nanoparticles with the average size of 4, 8 and 20 nm, respectively. Electrochemical studies show that the catalytic property towards oxygen evolution is dependent on the applied voltage. At low voltage (less than 0.65 V) the Co (hexagonal) nanoparticles are superior to the alloy (Co-Ni) nanoparticles while above this voltage the alloy nanoparticles are more efficient catalysts. The nanoparticles of cobalt (hcp and fcc) and alloy (Co-Ni) nanoparticles show ferromagnetism. The saturation magnetization of Co-Ni nanoparticles is reduced compared to the bulk possibly due to surface oxidation.

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This paper reports on the liquid-helium-temperature (5 K) electron paramagnetic resonance (EPR) spectra of Cr3+ ions in the nanoparticles of SnO2 synthesized at 600 degrees C with concentrations of 0%, 0.1%, 0.5%, 1%, 1.5%, 2.0%, 2.5%, 3.0%, 5.0%, and 10%. Each spectrum may be simulated as overlap of spectra due to four magnetically inequivalent Cr3+ centers characterized by different values of the spin-Hamiltonian parameters. Three of these centers belong to Cr3+ ions in orthorhombic sites, situated near oxygen vacancies, characterized by very large zero-field splitting parameters D and E, presumably due to the presence of nanoparticles in the samples. The fourth EPR spectrum belongs to the Cr3+ ions situated at sites with tetragonal symmetry, substituting for the Sn4+ ion, characterized by a very small value of D. In addition, there appears a ferromagnetic resonance line due to oxygen defects for samples with Cr3+ concentrations of <= 2.5%. Further, in samples with Cr3+ concentrations of >2.5%, there appears an intense and wide EPR line due to the interactions among the Cr3+ ions in the clusters formed due to rather excessive doping; the intensity and width of this line increase with increasing concentration. The Cr3+ EPR spectra observed in these nanopowders very different from those in bulk SnO2 crystals.

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Several orientation and tracking systems employed in parabolic-cylindrical concentrators for focusing the direct solar radiation on the absorber tubes are analyzed from the technical and economic points of view. Case one, where the incidence factor was a function of declination and hour angle, showed that the maximum variations of incident factor from morning to noon was 0.5 at zero angle of declination. Case two, where the incidence factor was a function of declination, hour angle and latitude, showed the maximum variation of the incidence factor to be 0.128, which occurred during noon at the latitude of 30 degrees, corresponding to a change of declination from 0 to 23.5 degrees. In case three, the incidence factor, a function of declination only, showed that the maximum variation of the incidence factor corresponding to the change in declination from 0 to 23.5 degree was 0.0758. It is concluded that system three is the most efficient from the technical and economic point of view.

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Electrically active deep levels related to nickel in silicon are studied under different diffusion conditions, quenching modes, and annealing conditions. The main nickel-related level is at Ev+0.32 eV. Levels at Ev+0.15 and Ev+0.54 eV are not related to nickel while those at Ev+0.50 and Ev+0.28 eV may be nickel related. Their concentrations depend on the quenching mode. There is no nickel-related level in the upper half of the band gap. The complicated annealing behavior of the main nickel-related level is explained on the basis of the formation and dissociation of a nickel-vacany complex. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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Irreversible, Pressure induced, quasicrystal-to-crystal transitions are observed for the first time in melt spun alloys at 4.9 GPa for Al 78 Mn22 and 9.3 GPa for Al86 Mn14 by monitoring the electrical resistivities of these alloys as a function of pressure. Electron diffraction and x-ray measurements are used to show that these quasicrystalline phases have icosohedral point group symmetry. The crystalline phases which appear at high pressures are identified as h.c.p. for Al78 Mn22 and orthorhombic for Al86 Mn14.

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A new four-hole cylindrical cantilever probe is described which could be used for three-dimensional flow surveys. The probe is more compact than the usual cylindrical type allowing for closer approach to a boundary. The probe is robust and gives good reproducibility. It can be used for a wide range of pitch angle. Review of Scientific Instruments is copyrighted by The American Institute of Physics.

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Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases.

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A monolithic surface acoustic wave (SAW) resonator operating at 156 MHz, in which the frequency controlling element is a Fabry–Perot type of SAW resonator and the gain element is a monolithic SAW amplifier (SiOx/InSb/SiOx structure located inside the SAW resonator cavity) is described and experimental details presented. Based on the existing experimental data, an uhf monolithic ring resonator oscillator is proposed. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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We report here that the structural origin of an easily reversible Ge15Te83Si2 glass can be a promising candidate for phase change random access memories. In situ Raman scattering studies on Ge15Te83Si2 sample, undertaken during the amorphous set and reset processes, indicate that the degree of disorder in the glass is reduced from off to set state. It is also found that the local structure of the sample under reset condition is similar to that in the amorphous off state. Electron microscopic studies on switched samples indicate the formation of nanometric sized particles of c-SiTe2 structure. ©2009 American Institute of Physics

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We report linear and nonlinear optical properties of the biologically important Na doped ZnO nanoparticle dispersions. Interesting morphological changes involving a spherical to flowerlike transition have been observed with Na doping. Optical absorption measurements show an exciton absorption around 368 nm. Photoluminescence measurements reveal exciton recombination emission, along with shallow and deep trap emissions. The increased intensity of shallow trap emission with Na doping is attributed to oxygen deficiency and shape changes associated with doping. Nonlinear optical measurements show a predominantly two-photon induced, excited state absorption, when excited with 532 nm, 5 ns laser pulses, indicating potential optical limiting applications.

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The present trend in the industry is towards the use of power transistors in the development of efficient Pulsewidth Modulated (PWM) inverters, because of their operation at high frequency, simplicity of turn-off, and low commutation losses compared to the technology using thyristors. But the protection of power transistors, minimization of switching power loss, and design of base drive circuit are very important for a reliable operation of the system. The requirements, analysis, and a simplified procedure for calculation of the switching-aid network components are presented. The transistor is protected against short circuit using a modified autoregulated and autoprotection drive circuit. The experimental results show that the switching power loss and voltage stress in the device can be reduced by suitable choice of the switching-aid network component values.