A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition

A new method to form nanoscale InGaN quantum dots using MOCVD is reported, This method is much different from a method. which uses surfactant or the Stranski-Krastannow growth mode. The dots were formed by increasing the energy barrier for adatoms, which are hopping by surface passivation, and by decreasing the growth temperature. Thus, the new method can be called as a passivation-low-temperature method. Regular high-temperature GaN films were grown first and were passivated. A low-temperature thin layer of GaN dot was then deposited on the surface that acted as the adjusting layer. At last the high-density InGaN dots could be fabricated on the adjusting layer. Atomic force microscopy measurement revealed that InGaN dots were small enough to expect zero-dimensional quantum effects: The islands were typically 80 nm wide and 5 nm high. Their density was about 6 x 10(10) cm(-2). Strong photoluminescence emission from the dots is observed at room temperature, which is much stronger than that of the homogeneous InGaN film with the same growth time. Furthermore, the PL emission of the GaN adjusting layer shows 21 meV blueshift compared with the band edge emission of the GaN due to quantum confine effect. (C) 2002 Elsevier Science B.V. All rights reserved.

The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.

Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

Corrosion inhibition of carbon steel in tetra-n-butylammonium bromide aqueous solution by benzotriazole and Na3PO4

The corrosion inhibition behavior of benzotriazole, Na3PO4 and their mixture on carbon steel in 20 wt.% (0.628 mol l(-1)) tetra-n-butylammonium bromide aerated aqueous solution was investigated by weight-loss test, potentiodynamic polarization measurement, electrochemical impedance spectroscopy and scanning electron microscope/energy dispersive X-ray techniques. The inhibition action of BTA or SP or inhibitors mixture on the corrosion of carbon steel is mainly due to the inhibition of anodic process of corrosion. The results revealed that inhibitors mixtures have shown synergistic effects at lower concentration of inhibitors. At 2 g l(-1) BTA and 2 g l(-1) SP showed optimum enhanced inhibition compared with their individual effects.

直接甲醇燃料电池阳极催化剂及甲醇氧化稀土助催化剂剂研究

燃料电池以其高效、环境友好的发电方式，被誉为21世纪的能源技术。其中，直接甲醇燃料电池（DMFC）更以燃料甲醇来源丰富，价格低廉，储存、携带方便而成为近年的研究热点。但是，DMFC在其实用化之前还需要解决一些重要问题，其中的关键之一就是高性能的贵金属催化剂的研究。我们知道，甲醇的电化学活性要低于氢气三个数量级；而且甲醇在R表面进行电化学氧化时，其中间解离吸附产物会造成贵金属催化剂中毒，显著降低了催化剂的活性。因此，要使DMFC具有相当高的电流密度和运行稳定性，就需要对贵金属催化剂制备进行不断的研究和改进。在本文的工作中，主要从Pt/C催化剂的制备方法、新型碳纳米管载体、稀土助催化剂等三个方面进行了研究和探索，取得的具体结果如下：1．Pt／C催化剂制备方法的研究与改进（1）在本组已有的研究结果基础上，对预沉积还原法进行了一些改进，采用原子吸收光谱（AAS）进行表征，发现Pt的利用率得到了明显的提高。采用X射线衍射。（RD）、透射电子显微镜（TEM）和BET表征铂的粒径、晶态结构和催化剂特性，分析表明，经过改进的预沉积还原法制备的催化剂仍然具有良好的分散性、较小的粒径、较低的晶态结构和良好的催化剂特性，电化学测试证明其性能要优于同等的E-TEK催化剂。（2）借鉴冶金学中的相关技术，提出了一种新的Pt/C催化剂制备方法一程序升温焙烧法。该方法的具体步骤增强了金属催化剂粒子和碳载体之间的相互作用力，提高了碳载体的导电性，并且形成了部分有利于催化反应进行的活性晶态结构。得到的R／C催化剂获得了近似E-TEK催化剂的催化活性，在具体方法上仍有改进的潜力。采用了同（1）的催化剂表征方法。2．甲醇电化学氧化稀土助催化剂研究在直接甲醇燃料电池Pt/C催化剂的研究过程中，一个重要的方面就是助催化剂的研究，并且已经得到了较好的结果。本工作选用了稀土元素为研究对象，因为稀土元素属于过渡金属，具有丰富的d电子轨道，易于和金属形成强的类化学键的吸附作用，并且能够和有机小分子形成多种配位化合物。经过初步的工作，发现了有些稀土离子如Sm3+能够在Pt表面吸附并且对甲醇电化学氧化具有较稳定的促进作用，采用循环伏安法，计时电流，交流阻抗等电化学方法进行了表征。根据实验结果，对其反应机理进行了初步的探讨。3．碳纳米管（CNTs）作为贵金属催化剂载体的研究碳纳米管（CNTs）由于其结构上的特殊性（径向尺寸为纳米量级，轴向尺寸为微米量级）而表现出典型的一维量子材料，同时具有较高的机械强度和超常的电学性能，能够为化学反应提供纳米级的反应场所，因此受到了化学界包括电化学研究人员的极大关注。已经在作为贵金属催化剂载体方面进行了一些研究，本工作的主要内容就是针对Pt/CNTs催化剂对碳纳米管的要求，对其预处理方法进行了改进，采用了如（1）中的催化剂表征方法和（2）中的相关电化学方法进行测定，发现碳纳米管作为贵金属催化剂载体时，对它的纯化处理方法的不同明显地影响了其载体性质和催化剂的活性。

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates

The chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a GaAs/AlxGa1-xAs multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (PL) spectroscopy. The changes in the PL response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the PL intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states.

Photostimulated luminescence of BaFBr:Eu2+ phosphors

After x-irradiation for 10 s, luminescence from BaFBr:Eu2+ phosphors by photostimulation of longer wavelength than F absorption bands was observed and assigned to the surface states or intrinsic defects of the powders. It is found that the luminescence by photostimulation into F bands can be reduced via electron migration from F centers into the surface states or intrinsic defects, thus reducing the x-ray storage or image stability. Surface passivation can lower these defects and improve the phosphors or imaging plate quality. (C) 1996 American Institute of Physics.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

LUMINESCENCE-CENTERS IN POROUS SILICON

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100-150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of Gamma and X band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.

Optical and Electrical Properties of GaN.Mg Grown by MOCVD

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV （BL） and the ultraviolet emission band is around 3.27eV （UVL）. The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.