Effets des recuits ultra-rapides (10^5 K/s) sur la formation des siliciures métalliques en phase solide

La synthèse de siliciures métalliques sous la forme de films ultra-minces demeure un enjeu majeur en technologie CMOS. Le contrôle du budget thermique, afin de limiter la diffusion des dopants, est essentiel. Des techniques de recuit ultra-rapide sont alors couramment utilisées. Dans ce contexte, la technique de nanocalorimétrie est employée afin d'étudier, in situ, la formation en phase solide des siliciures de Ni à des taux de chauffage aussi élevés que 10^5 K/s. Des films de Ni, compris entre 9.3 et 0.3 nm sont déposés sur des calorimètres avec un substrat de a-Si ou de Si(100). Des mesures de diffraction de rayons X, balayées en température à 3 K/s, permettent de comparer les séquences de phase obtenues à bas taux de chauffage sur des échantillons de contrôle et à ultra-haut taux de chauffage sur les calorimètres. En premier lieu, il est apparu que l'emploi de calorimètres de type c-NC, munis d'une couche de 340 nm de Si(100), présente un défi majeur : un signal endothermique anormal vient fausser la mesure à haute température. Des micro-défauts au sein de la membrane de SiNx créent des courts-circuits entre la bande chauffante de Pt du calorimètre et l'échantillon métallique. Ce phénomène diminue avec l'épaisseur de l'échantillon et n'a pas d'effet en dessous de 400 °C tant que les porteurs de charge intrinsèques au Si ne sont pas activés. Il est possible de corriger la mesure de taux de chaleur en fonction de la température avec une incertitude de 12 °C. En ce qui a trait à la formation des siliciures de Ni à ultra-haut taux de chauffage, l'étude montre que la séquence de phase est modifiée. Les phases riches en m étal, Ni2Si et théta, ne sont pas détectées sur Si(100) et la cinétique de formation favorise une amorphisation en phase solide en début de réaction. Les enthalpies de formation pour les couches de Ni inférieures à 10 nm sont globalement plus élevées que dans le cas volumique, jusqu' à 66 %. De plus, les mesures calorimétriques montrent clairement un signal endothermique à haute température, témoignant de la compétition que se livrent la réaction de phase et l'agglomération de la couche. Pour les échantillons recuits a 3 K/s sur Si(100), une épaisseur critique telle que décrite par Zhang et Luo, et proche de 4 nm de Ni, est supposée. Un modèle est proposé, basé sur la difficulté de diffusion des composants entre des grains de plus en plus petits, afin d'expliquer la stabilité accrue des couches de plus en plus fines. Cette stabilité est également observée par nanocalorimétrie à travers le signal endothermique. Ce dernier se décale vers les hautes températures quand l'épaisseur du film diminue. En outre, une 2e épaisseur critique, d'environ 1 nm de Ni, est remarquée. En dessous, une seule phase semble se former au-dessus de 400 °C, supposément du NiSi2.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Short Nylon-6 Fibre/Rubber-Toughened Polystyrene Composites

The thesis describes studies on development of short Nylon-6 fibre composites based on rubber-toughened polystyrene (PS). Toughening was done using natural rubber (NR), styrene-butadiene rubber (SBR) and whole tyre reclaim (WTR). The composites were prepared by melt mixing in an internal mixer at 170 oC. It was found that the optimum blend ratio was 85/15 for PS/NR, 90/10 for PS/SBR and 90/22 for PS/WTR blends. The effect of dynamic vulcanisation on 85/15 PS/NR and 90/10 PS/SBR blends using dicumyl peroxide (DCP) at various concentrations were also studied. The dynamic crosslinking improved the tensile properties, flexural properties, impact strength and dynamic mechanical properties of both the blends. The effect of unmodified and resorcinol formaldehyde latex (RFL)-coated short Nylon-6 fibres on the mechanical properties, morphology and dynamic mechanical properties of 85/15 PS/NR, 90/10 PS/SBR and 90/22 PS/WTR blends were studied. Fibre loading was varied from 0 to 3 wt.%. For 85/15 PS/NR blend, there was a significant enhancement in tensile properties, flexural properties and impact strength with 1 wt.% of both unmodified and RFL-coated fibres. Dynamic mechanical analysis revealed that the storage modulus at room temperature was maximum at 1 wt.% fiber loading for both composites. The surface functionality of the fiber was improved by giving alkali treatment. Maleic anhydride-grafted-polystyrene (MA-g-PS) was prepared and used as a compatibiliser. The effect of MA-g-PS on the composites was investigated with respect to mechanical properties, morphology and dynamic mechanical properties. The compatibiliser loading was varied from 0 to 2 wt.%. The properties were enhanced significantly in the case of treated and untreated fibre composites at a compatibiliser loading of 0.75 wt.%. SEM analysis confirmed better bonding between the fibre and the matrix. Dynamic mechanical studies showed that the storage modulus at room temperature improved for treated fibre composites in the presence of compatibiliser. In the case of 90/10 PS/SBR composites, the addition of short Nylon-6 fibres at 1 wt.% loading improved the tensile modulus, flexural properties and impact strength while the tensile strength was marginally reduced. The surface treated fibers along with compatibiliser at 0.5 wt.% improved the tensile properties, flexural properties and impact strength. DMA reveale that the storage modulus at room temperature was better for composites containing untreated fibre and the compatibiliser. In the case of 90/22 PS/WTR blends, 1 wt.% unmodified fibre and 0.5 wt.% RFL-coated fibres improved tensile modulus, flexural properties and impact strength. Tensile strength was improved marginally. The surface treatment of Nylon fibre and the addition of compatibiliser at 0.5 wt.% enhanced the tensile properties, flexural properties and impact strength. The dynamic mechanical analysis showed that the storage modulus at room temperature was better for untreated fibre composites in conjunction with the compatibiliser. The thermal stability of PS/NR was studied by TGA. Thermal stability of the blends improved with dynamic vulcanisation and with the incorporation of RFL-coated Nylon fibres. The untreated and partially hydrolyzed fibre composites in conjunction with the compatibiliser enhanced the thermal stability. Kinetic studies showed that the degradation of the blends and the composites followed first order kinetics.

Fault Tolerant Error Coding and Detection using Reversible Gates

In recent years, reversible logic has emerged as one of the most important approaches for power optimization with its application in low power CMOS, quantum computing and nanotechnology. Low power circuits implemented using reversible logic that provides single error correction – double error detection (SEC-DED) is proposed in this paper. The design is done using a new 4 x 4 reversible gate called ‘HCG’ for implementing hamming error coding and detection circuits. A parity preserving HCG (PPHCG) that preserves the input parity at the output bits is used for achieving fault tolerance for the hamming error coding and detection circuits.

A new look at reversible logic implementation of decimal adder

Reversibility plays a fundamental role when logic gates such as AND, OR, and XOR are not reversible. computations with minimal energy dissipation are considered. Hence, these gates dissipate heat and may reduce the life of In recent years, reversible logic has emerged as one of the most the circuit. So, reversible logic is in demand in power aware important approaches for power optimization with its circuits. application in low power CMOS, quantum computing and A reversible conventional BCD adder was proposed in using conventional reversible gates.

Quick Addition of Decimals Using Reversible Conservative Logic

In recent years, reversible logic has emerged as one of the most important approaches for power optimization with its application in low power CMOS, nanotechnology and quantum computing. This research proposes quick addition of decimals (QAD) suitable for multi-digit BCD addition, using reversible conservative logic. The design makes use of reversible fault tolerant Fredkin gates only. The implementation strategy is to reduce the number of levels of delay there by increasing the speed, which is the most important factor for high speed circuits.

Wideband Low-Distortion Sigma-Delta ADC for WLAN

This work presents a wideband low-distortion sigmadelta analog-to-digital converter (ADC) for Wireless Local Area Network (WLAN) standard. The proposed converter makes use of low-distortion swing suppression SDM architecture which is highly suitable for low oversampling ratios to attain high linearity over a wide bandwidth. The modulator employs a 2-2 cascaded sigma-delta modulator with feedforward path with a single-bit quantizer in the first stage and 4-bit in the second stage. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8V supply voltage. Simulation results show that, a peak SNDR of 57dB and a spurious free dynamic range (SFDR) of 66dB is obtained for a 10MHz signal bandwidth, and an oversampling ratio of 8.

A Multi-Mode Sigma-Delta ADC for GSM/WCDMA/ WLAN Applications

The demand for new telecommunication services requiring higher capacities, data rates and different operating modes have motivated the development of new generation multi-standard wireless transceivers. In multistandard design, sigma-delta based ADC is one of the most popular choices. To this end, in this paper we present cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is used to achieve a peak SNDR of 88dB with oversampling ratio of 160 for a bandwidth of 200KHz and for WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB peak SNDR with over-sampling ratio of 16 for a bandwidth of 2MHz. Finally, a 2-2-2 cascaded MASH architecture with 4-bit in the last stage is proposed to achieve a peak SNDR of 58dB for WLAN for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be made inactive to achieve low power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage

A Triple-Mode Feed-Forward Sigma-Delta Modulator Design For Gsm / Wcdma / Wlan Applications

This paper presents a cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is turned on to achieve 88dB dynamic range with oversampling ratio of 160 for a bandwidth of 200KHz; in WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB dynamic range with oversampling ratio of 16 for a bandwidth of 2MHz and a 2-2-2 cascaded MASH architecture with a 4-bit in the last stage to achieve a dynamic range of 58dB for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be switched off taking into considerations like power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage.

Digitales stochastisches Magnetfeld-Sensorarray

Digitales stochastisches Magnetfeld-Sensorarray Stefan Rohrer Im Rahmen eines mehrjährigen Forschungsprojektes, gefördert von der Deutschen Forschungsgesellschaft (DFG), wurden am Institut für Mikroelektronik (IPM) der Universität Kassel digitale Magnetfeldsensoren mit einer Breite bis zu 1 µm entwickelt. Die vorliegende Dissertation stellt ein aus diesem Forschungsprojekt entstandenes Magnetfeld-Sensorarray vor, das speziell dazu entworfen wurde, um digitale Magnetfelder schnell und auf minimaler Fläche mit einer guten räumlichen und zeitlichen Auflösung zu detektieren. Der noch in einem 1,0µm-CMOS-Prozess gefertigte Test-Chip arbeitet bis zu einer Taktfrequenz von 27 MHz bei einem Sensorabstand von 6,75 µm. Damit ist er das derzeit kleinste und schnellste digitale Magnetfeld-Sensorarray in einem Standard-CMOS-Prozess. Konvertiert auf eine 0,09µm-Technologie können Frequenzen bis 1 GHz erreicht werden bei einem Sensorabstand von unter 1 µm. In der Dissertation werden die wichtigsten Ergebnisse des Projekts detailliert beschrieben. Basis des Sensors ist eine rückgekoppelte Inverter-Anordnung. Als magnetfeldsensitives Element dient ein auf dem Hall-Effekt basierender Doppel-Drain-MAGFET, der das Verhalten der Kippschaltung beeinflusst. Aus den digitalen Ausgangsdaten kann die Stärke und die Polarität des Magnetfelds bestimmt werden. Die Gesamtanordnung bildet einen stochastischen Magnetfeld-Sensor. In der Arbeit wird ein Modell für das Kippverhalten der rückgekoppelten Inverter präsentiert. Die Rauscheinflüsse des Sensors werden analysiert und in einem stochastischen Differentialgleichungssystem modelliert. Die Lösung der stochastischen Differentialgleichung zeigt die Entwicklung der Wahrscheinlichkeitsverteilung des Ausgangssignals über die Zeit und welche Einflussfaktoren die Fehlerwahrscheinlichkeit des Sensors beeinflussen. Sie gibt Hinweise darauf, welche Parameter für das Design und Layout eines stochastischen Sensors zu einem optimalen Ergebnis führen. Die auf den theoretischen Berechnungen basierenden Schaltungen und Layout-Komponenten eines digitalen stochastischen Sensors werden in der Arbeit vorgestellt. Aufgrund der technologisch bedingten Prozesstoleranzen ist für jeden Detektor eine eigene kompensierende Kalibrierung erforderlich. Unterschiedliche Realisierungen dafür werden präsentiert und bewertet. Zur genaueren Modellierung wird ein SPICE-Modell aufgestellt und damit für das Kippverhalten des Sensors eine stochastische Differentialgleichung mit SPICE-bestimmten Koeffizienten hergeleitet. Gegenüber den Standard-Magnetfeldsensoren bietet die stochastische digitale Auswertung den Vorteil einer flexiblen Messung. Man kann wählen zwischen schnellen Messungen bei reduzierter Genauigkeit und einer hohen lokalen Auflösung oder einer hohen Genauigkeit bei der Auswertung langsam veränderlicher Magnetfelder im Bereich von unter 1 mT. Die Arbeit präsentiert die Messergebnisse des Testchips. Die gemessene Empfindlichkeit und die Fehlerwahrscheinlichkeit sowie die optimalen Arbeitspunkte und die Kennliniencharakteristik werden dargestellt. Die relative Empfindlichkeit der MAGFETs beträgt 0,0075/T. Die damit erzielbaren Fehlerwahrscheinlichkeiten werden in der Arbeit aufgelistet. Verglichen mit dem theoretischen Modell zeigt das gemessene Kippverhalten der stochastischen Sensoren eine gute Übereinstimmung. Verschiedene Messungen von analogen und digitalen Magnetfeldern bestätigen die Anwendbarkeit des Sensors für schnelle Magnetfeldmessungen bis 27 MHz auch bei kleinen Magnetfeldern unter 1 mT. Die Messungen der Sensorcharakteristik in Abhängigkeit von der Temperatur zeigen, dass die Empfindlichkeit bei sehr tiefen Temperaturen deutlich steigt aufgrund der Abnahme des Rauschens. Eine Zusammenfassung und ein ausführliches Literaturverzeichnis geben einen Überblick über den Stand der Technik.

Asymptotically Zero Energy Computing Using Split-Level Charge Recovery Logic

The dynamic power requirement of CMOS circuits is rapidly becoming a major concern in the design of personal information systems and large computers. In this work we present a number of new CMOS logic families, Charge Recovery Logic (CRL) as well as the much improved Split-Level Charge Recovery Logic (SCRL), within which the transfer of charge between the nodes occurs quasistatically. Operating quasistatically, these logic families have an energy dissipation that drops linearly with operating frequency, i.e., their power consumption drops quadratically with operating frequency as opposed to the linear drop of conventional CMOS. The circuit techniques in these new families rely on constructing an explicitly reversible pipelined logic gate, where the information necessary to recover the energy used to compute a value is provided by computing its logical inverse. Information necessary to uncompute the inverse is available from the subsequent inverse logic stage. We demonstrate the low energy operation of SCRL by presenting the results from the testing of the first fully quasistatic 8 x 8 multiplier chip (SCRL-1) employing SCRL circuit techniques.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.

Compositional Data Analysis with R

R from http://www.r-project.org/ is ‘GNU S’ – a language and environment for statistical computing and graphics. The environment in which many classical and modern statistical techniques have been implemented, but many are supplied as packages. There are 8 standard packages and many more are available through the cran family of Internet sites http://cran.r-project.org . We started to develop a library of functions in R to support the analysis of mixtures and our goal is a MixeR package for compositional data analysis that provides support for operations on compositions: perturbation and power multiplication, subcomposition with or without residuals, centering of the data, computing Aitchison’s, Euclidean, Bhattacharyya distances, compositional Kullback-Leibler divergence etc. graphical presentation of compositions in ternary diagrams and tetrahedrons with additional features: barycenter, geometric mean of the data set, the percentiles lines, marking and coloring of subsets of the data set, theirs geometric means, notation of individual data in the set . . . dealing with zeros and missing values in compositional data sets with R procedures for simple and multiplicative replacement strategy, the time series analysis of compositional data. We’ll present the current status of MixeR development and illustrate its use on selected data sets

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