Influence of Tungsten Dopant on Sintering and Curie Temperatures of Ba(Zr0.10Ti0.90)O-3 Ceramics

Ba(Zr0.10Ti0.90)O3 (BZT10) and W+ 6 substituted BZT ceramics (BZT10:W) were prepared by mixed oxide method. The effect of W+ 6 addition in the BZT was evaluated by X-ray diffraction (XRD), dilatometer analysis, microstructural and dielectrical properties. When tungsten is introduced in the BZT lattice, a decrease in the grain size and shift on Curie temperature to lower value besides broadening of dielectric permittivity is evident. This is due repulsion between tungsten and their nearest neighbors leading to a structure which is tetragonal distorted. The sintering temperature is reduced when tungsten is introduced in the BZT lattice.

Conventional and microwave sintering of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites: non-ohmic and dielectric properties

The non-ohmic and dielectric properties as well as the dependence on the microstructural features of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites obtained by conventional and microwave sintering were investigated. It was demonstrated that the non-ohmic and dielectric properties depend strongly on the sintering conditions. It was found that the non-linear coefficient reaches values of 65 for microwave-sintered samples and 42 for samples sintered in a conventional furnace when a current density interval of 1-10 mA cm(-2) is considered. The non-linear coefficient value of 65 is equivalent to 1500 for samples sintered in the microwave if a current interval of 5-30 mA is considered as is shortly discussed by Chung et al (2004 Nature Mater. 3 774). Due to a high non-linear coefficient and a low leakage current (90 mu A) under both processing conditions, these samples are promising for varistor applications. The conventionally sintered samples exhibit a higher relative dielectric constant at 1 kHz (2960) compared with the samples sintered in the microwave furnace (2100). At high frequencies, the dielectric constant is also larger in the samples sintered in the conventional furnace. Depending on the application, one or another synthesis methodology is recommended, that is, for varistor applications sintered in a microwave furnace and for dielectric application sintered in a conventional furnace.

Preparation of Ni-Ti-Mo and Ni-Ti-Mo-Zr Alloys by High-Energy Ball Milling and Subsequent Hot Pressing

This work discusses on the preparation of Ni-45Ti-5Mo, Ni-40Ti-10Mo and Ni-46Ti-2Mo-2Zr (at-%) alloys by high-energy ball milling and hot pressing, which are potentially attractive for dental and medical applications. The milling process was performed in stainless steel balls (19mm diameter) and vials (225 mL) using a rotary speed of 300rpm and a ball-to-powder weight ratio of 10:1. Hot pressing under vacuum was performed in a BN-coated graphite crucible at 900 degrees C for 1 h using a load of 20 MPa. The milled and hot-pressed materials were characterized by X-ray diffraction, electron scanning microscopy, and electron dispersive spectrometry. Peaks of B2-NiTi and Ni4Ti3 were identified in XRD patterns of Ni-45Ti-5Mo, Ni-40Ti-10Mo and Ni-46Ti-2Mo-2Zr powders milled for 1h. The NiTi compound dissolved small Mo amounts lower than 4 at%, which were measured by EDS analysis. Moreover, it was identified the existence of an unknown Mo-rich phase in microstructures of the hot-pressed Ni-Ti-Mo alloys.

Effect of the sintering conditions on the electrical properties of Nd(3+) modified PLZT ceramics

The effect of the sintering method on the microstructural and electrical properties of (Pb(0.89)Nd(0.02)La(0.09))(Zr(0.65)Ti(0.35))O(3) (PNLZT) ceramics was studied by impedance spectroscopy. Structural and microstructural analyses were performed using x-ray and scanning electron microscopy techniques. Two different sintering routes were employed: the conventional and the hot-pressing sintering methods. The impedance analysis provided a convincing evidence for the existence of both grain (g) and grain boundary (gb) contributions to the conduction process. An equivalent circuit for the impedance behaviour has been proposed and discussed. The variation in the sintering method produces significant changes in the grain and grain boundary conductivities. For the grain effect, the main conduction mechanism has been associated with oxygen vacancy migration. Otherwise, for grain boundary conductivity the impedance behaviour has been discussed in terms of the brick-layer and the constriction resistance models (BLM and CRM, respectively).

Parâmetros físico-químicos de estrelas com planetas na missão CoRoT

In the present study we compute the atmospheric parameters (Teff , log g and vmic, [Fe/H]) and chemical abundance of 16 ions (Fe I, Fe II, O I, Si I, Na I, Mg I, Al I, Ca I, Ti I, Co I, Ni I, Rb I, Zr I, Ba II, La II and Cr I) for 16 solar-like stars with masses between 0:8 and 1:2 Mfi aproximatedly, including 10 planet-host stars detected by the CoRoT Space Mission. For this study, we use data from the ESO public archive: (i) high resolution spectra (R 47000) from the UVES spectrograph on the VLT/UT2-ESO (for 7 stars, covering the wavelength range 3450-4515 Å and 5500-9400 Å) and (ii) high resolution spectra from HARPS spectrograph on the La Silla-ESO 3.60 m telescope (for 9 stars, covering the wavelength range 4200-6865 Å). Our spectral analysis is based on MARCS models of atmosphere and Turbospectrum spectroscopic tools. On the base of the computed parameters, the referred abundances appears to follow the same behavior of the solar curve abundances. Further, one observes a signifficant correlation between the abundance ratio [m/Fe] and condensation temperature (Tc) of refractory elements (Tc > 900 K). The behavior of the projected rotational velocity (v sin i) versus the computed abundances [m/Fe] is also analyzed, presenting no clear trends. This study oers additional constraints to trace the evolutive history of solar-like stars with planets, including the search for chemical dierences between stars with and without transit planets and anomalies in the studied abundances

Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Intense visible photoluminescence in Ba(Zr0.25Ti0.75)O-3 thin films

Photoluminescence at room temperature in Ba(Zr0.25Ti0.75)O-3 thin films was explained by the degree of structural order-disorder. Ultraviolet-visible absorption spectroscopy, photoluminescence, and first principles quantum mechanical measurements were performed. The film annealed at 400 degrees C for 4 h presents intense visible photoluminescence behavior at room temperature. The increase of temperature and annealing time creates [ZrO6]-[TiO6] clusters in the lattice leading to the trapping of electrons and holes. Thus, [ZrO5]-[TiO6]/[ZrO6]-[TiO6] clusters were the main reason for the photoluminescence behavior.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

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Photoluminescence at room temperature in disordered Ba(0.50)Sr(0.)5(0)(Ti0.80Sn0.20)O-3 thin films

Photoluminescence (PL) properties at room temperature of disordered Ba0.50Sr0.50(Ti0.80Sn0.20)O-3 (BST:Sn) thin films were obtained by the polymeric precursor method. X-ray diffraction data and corresponding PL properties have been measured using the 488 nm line of an argon ion laser. The PL spectra of the film annealed at 350 degrees C for 21 h are stronger than those of the film annealed at 350 degrees C for 28 h, indicating a disorganized structure. The energy band gaps of the crystalline and amorphous BST:Sn thin films were 3.35 and 2.25 eV, respectively. The doped BST thin films also tend to a cubic structure, resulting from TiO6 deformations. (c) 2006 American Institute of Physics.

Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Thermal behavior of the Ti(IV), Zr(IV) and Pb(II) complexes with 5-nitro-8-hydroxyquinoline

Ti(IV), Zr(IV) and Pb(II) complexes with 5-nitro-8-hydroxyquinoline (5-NQ) were obtained by precipitation in acetone/ammonium solution medium. The compounds TiO(C9H5N2O3)(2).0.5H(2)O, ZrO(C9H5N2O3)(2)2H(2)O and Pb(C9H5N2O3)(2) were characterized by Elemental Analysis, X-ray Diffratometry and Infrared Absorption Spectrometry and their thermal behavior followed by TG/DTA. This present study intends to show the variations in the thermal behavior of the compounds and in the composition and/or structure of final oxide residues, in different atmospheres and heating rates.

Anelastic relaxation processes due oxygen in Nb-3.1 at.% Ti alloys

In the last 50 years several studies have been made to understand the relaxation mechanisms of the heavy interstitial atoms present in transition metals and their alloys. Internal friction measurements have been carried out in a Nb-Ti alloy containing 3.1 at.% of Ti produced by the Materials Department of Chemical Engineering Faculty of Lorena (Brazil), with several quantities of oxygen in solid solution using a torsion pendulum. These measurements have been performed by a torsion pendulum in the temperature range from 300 to 700 K with an oscillation frequency between 0.5 and 10 Hz. The experimental results show complex internal friction spectra that have been resolved, into a series of Debye peaks corresponding to different interactions. For each relaxation process it was possible to obtain the height and temperature of the peak, the activation energy and the relaxation time of the process. (C) 2003 Elsevier B.V. All rights reserved.

Stress-induced ordering due heavy interstitial atoms in Nb-0.3 wt.% Ti alloys

The mechanical properties of metals with bee structure, such as niobium and their alloys, are changed of a significant way by the introduction of heavy interstitial elements. These interstitial elements (oxygen, for example) present in the metallic matrix occupy octahedral sites and constitute an elastic dipole of tetragonal symmetry and might produce anelastic relaxation. Polycrystalline samples of Nb-0.3 wt.% Ti (Nb-Ti) alloy with oxygen in solid solution were analysed. The anelastic spectroscopy measurements had been made in a torsion pendulum, with frequencies in the Hz range, in a temperature range between 300 and 700 K. The results showed thermally activated relaxation structures were identified four relaxation process attributed to stress-induced ordering of single oxygen, nitrogen and carbon atoms around niobium and stress-induced ordering of single oxygen atoms around titanium atoms. (c) 2005 Elsevier B.V. All rights reserved.

Temperature dependence on the electrical properties of Ba(Ti0.90Zr0.10)O-3:2V ceramics

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Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films

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