Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

The 3.4-3.5 Ga Sao Jose do Campestre massif, NE Brazil: remnants of the oldest crust in South America

The oldest fragment of continental crust recognized in South America occurs as an isolated Archean enclave in northeastem Brazil's Borborema Province, ca. 600 Ma Brasiliano-Pan African orogenic belt. This Archean fragment, the Sao Jose do Campestre massif, is surrounded by large tracts of 2.2-2.0 Ga Paleoproterozoic gneisses and is located more than 600-1500 km from the much larger assemblages of Archean rocks found in the Sao Fransciso and Amazonian cratons, located to the south and west, respectively. Geochronological studies of the Sao Jose do Campestre massif show that its oldest rocks contain zircons with U-Pb ages up to 3.5 Ga and Sm-Nd T-DM model ages of more than 3.7 Ga, indicating that they represent reworked crust. This older nucleus is flanked by both reworked and juvenile 3.25 and 3.18 Ga rocks which arc intruded by both 3.00 and 2.69 Ga plutonic bodies. The protracted evolution the Sao Jose do Campestre massif is consistent with that of a larger continental mass as opposed to a small crustal fragment that grew in isolation. As such, the Sao Jose do Campestre massif is interpreted as representing a detached piece of an evolved craton that became entrained with younger rocks during a subsequent Paleoproterozoic accretionary-orogenic event. This hypothesis is bolstered by the presence of Paleoproterozoic gneisses that envelop the Sao Jose do Campestre massif, as well as the existence of ca. 2.0 Ga metamorphic zircon and monazite within its rocks. The occurrence of several different Archean cratonic basement inliers within the greater Paleoproterozoic crustal framework of the Borborema Province suggests that cratonic slices spalled off one or more larger Archean masses prior to the ca. 2.2-2.0 Ga Paleoproterozoic orogenic collage. A important challenge is to link these older fragments to their parent cratons. Although results are not unique, the pattern of ages and isotopic signatures observed in the Sao Jose do Campestre massif is similar to that seen in parts of the Sao Francisco Craton, and it is possible that the Sao Jose do Campestre massif is a fragment of an Archean continental fragment formed during an episode of continental breakup prior to 2200 Ma. (C) 2003 Elsevier B.V. All rights reserved.

Thermal-optical properties of Ga : La : S glasses measured by thermal lens technique

In this work the quantitative theoretical treatment for two beam mode mismatched thermal lens spectrometry is applied to investigate the thermo-optical properties of chalcohalide (chalcolgenides and halides mixture) glasses. For the three kinds of glass studied the thermal diffusivity varied between 2.5 and 2.7 x 10(-3) cm(2) s(-1). Using these results and supposing Dulong-Petit specific heats we estimated the thermal conductivity and temperature ratio of optical path length (ds/dT) and temperature coefficient of refractive index (dn/dT). All samples had positive ds/dT(similar to 3.3 x 10(-6) K-1) and negative dn/dT (similar to -26 x 10(-6) K-1). The difference between these parameters and the change of signal are consequences of the expansion coefficient (13 x 10(-6) K-1) and refractive index (n similar to 2.6) of chalcohalides. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses

Photoexpansion and photobleaching effects have been examined in glass compositions Ga10Ge25S65 and Ga5Ge25As5S65. Such compositions are promising for optical storage and planar waveguide applications. To evaluate the photoinduced effect, samples were exposed to 351 nm light, varying power density (3-10 W/cm(2)) and exposure time (0-120 min). The exposed areas have been analyzed using atomic force microscopy (AFM) and an expansion of 800 nm is observed for composition Ga10Ge25S65 exposed during 120 min and 5 W/cm(2) power density. The optical absorption edge measured by a spectrophotometer indicates a blue shift (80 nm) after illumination in the composition Ga10Ge25S65. The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using a energy dispersive analyzer (EDX) indicate an increase of the number of sulfur atoms in the irradiated area. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.

The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.

Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.

Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses

To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.

Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of Mg-Ga powder addition on the superconducting properties of MgB2 samples

MgB2 bulk samples containing different proportions of Mg-Ga powder were prepared by an in situ reaction technique. The Mg-Ga powder was obtained via high energy ball milling of a Mg-10 at.% Ga composite, which was fabricated by melting of pure magnesium and gallium metals inside encapsulated stainless steel tube at 655 °C in a controlled atmosphere. The MgB2 samples containing 0, 1, 3, 5 and 7 wt.% of MgGa addition were sintered at 650 °C for 30 min in argon atmosphere. Magnetic measurements performed at 5 K and 20 K showed improved critical current density, Jc, in the low magnetic field range for samples with MgGa addition. The critical temperature, Tc, for all samples with gallium additions is consistently higher when compared to the pure MgB2. © 2007 Elsevier B.V. All rights reserved.

Evidence for 2.35 to 2.30 Ga juvenile crustal growth in the northwest Borborema Province, NE Brazil

The c. 600 Ma Brasiliano Borborema Province of NE Brazil comprises a complex collage of Precambrian crustal blocks cut by a series of continental-scale shear zones. The predominant basement rocks in the province are 2.1-2.0 Ga Transamazonian gneisses of both juvenile and reworked nature. U-Pb zircon and Sm-Nd whole-rock studies of tonalite-trondhjemite-granodiorite basement gneisses in the NW Ceará or Médio Coreaú domain in the northwestern part of the Borborema Province indicate that this represents a continental fragment formed by 2.35-2.30 Ga juvenile crust. This block has no apparent genetic affinity with any other basement gneisses in the Borborema Province, and it does not represent the tectonized margin of the c. 2.1-2.0 Ga São Luis Craton to the NW. The petrological and geochemical characteristics, as well as the Nd-isotopic signatures of these gneisses, are consistent with their genesis in an island arc setting. This finding documents a period of crustal growth during a period of the Earth's history which is known for its tectonic quiescence and paucity of crust formation. © Geological Society of London 2009.

Rhizoctonia solani GA-3PT es el principal patógeno asociado con el chancro del tallo y la sarna negra de la papa en Colombia

Stem canker and black scurf diseases of potatoes are caused by the basidiomycetous fungus Tanatephorus cucumeris (ana-morphic species complex Rhizoctonia solani). Tese diseases have worldwide distribution wherever potato is grown but their etiology varies depending on the predominance of distinct R. solani anastomosis groups (AGs) in a particular area. Within the species complex, several AGs have been associated with stem canker or black scurf diseases, including AG-1, AG-2-1, AG-2-2, AG-3, AG-4, AG-5 and AG-9. Tis article reports on the most comprehensive population-based study, providing evidence on the distribution of R. solani AGs in Colombian potato fields. A total of 433 isolates were sampled from the main potato cropping areas in Colombia from 2005 to 2009. Isolates were assigned to AGs by conventional PCR assays using specific primers for AG-3, sequencing of the ITS-rDNA and hyphal interactions. Most of the isolates evaluated were assigned to AG-3PT (88.45%), and a few to AG-2-1 (2.54%). Te remaining isolates were binucleate Rhizoctonia (AG-A, E, and I). Pathogenicity tests on the stems and roots of different plant species, including the potato, showed that AG-3PT affects the stems of solanaceous plants. In other plant species, damage was severe in the roots, but not the stems. AG-2-1 caused stem canker of Solanum tuberosum cv. Capiro and in R. raphanistrum and B. campestris subsp. Rapa plantlets and root rot in other plants. Te results of our study indicated that R. solani AG-3PT was the principal pathogen associated with potato stem canker and black scurf diseases of potatoes in Colombia.

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'GA IND.1-x'MN IND.XN' preparados por sputtering reativo

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Fertirrigação nitrogenada por gotejamento e época de aplicação foliar de ácido giberélico 'GA IND.3' em alface americana (Lactuca sativa L.)

Pós-graduação em Agronomia (Irrigação e Drenagem) - FCA