The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders


Autoria(s): Goncalves, A. D.; de Lima, SAM; Davolos, Marian Rosaly; Antonio, S. G.; Paiva-Santos, CDO
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/05/2006

Resumo

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.

Formato

1330-1334

Identificador

http://dx.doi.org/10.1016/j.jssc.2006.01.046

Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 5, p. 1330-1334, 2006.

0022-4596

http://hdl.handle.net/11449/39686

10.1016/j.jssc.2006.01.046

WOS:000237528900007

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Journal of Solid State Chemistry

Direitos

closedAccess

Palavras-Chave #zinc gallate #impurities in semiconductors #crystal structure and symmetry #optical properties #doping #ZnO : Ga #ZnGa3O4 #Pechini method
Tipo

info:eu-repo/semantics/article