The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/05/2006
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Resumo |
Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved. |
Formato |
1330-1334 |
Identificador |
http://dx.doi.org/10.1016/j.jssc.2006.01.046 Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 5, p. 1330-1334, 2006. 0022-4596 http://hdl.handle.net/11449/39686 10.1016/j.jssc.2006.01.046 WOS:000237528900007 |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Relação |
Journal of Solid State Chemistry |
Direitos |
closedAccess |
Palavras-Chave | #zinc gallate #impurities in semiconductors #crystal structure and symmetry #optical properties #doping #ZnO : Ga #ZnGa3O4 #Pechini method |
Tipo |
info:eu-repo/semantics/article |