Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/10/2009
|
Resumo |
To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved. |
Formato |
1884-1889 |
Identificador |
http://dx.doi.org/10.1016/j.jnoncrysol.2009.04.046 Journal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 355, n. 37-42, p. 1884-1889, 2009. 0022-3093 http://hdl.handle.net/11449/42118 10.1016/j.jnoncrysol.2009.04.046 WOS:000270620900025 |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Relação |
Journal of Non-Crystalline Solids |
Direitos |
closedAccess |
Palavras-Chave | #Raman scattering #Chalcogenides #Photoinduced effects |
Tipo |
info:eu-repo/semantics/article |