Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses


Autoria(s): Ledemi, Y.; Messaddeq, S. H.; Skhripachev, I.; Ribeiro, Sidney José Lima; Messaddeq, Younes
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/10/2009

Resumo

To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.

Formato

1884-1889

Identificador

http://dx.doi.org/10.1016/j.jnoncrysol.2009.04.046

Journal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 355, n. 37-42, p. 1884-1889, 2009.

0022-3093

http://hdl.handle.net/11449/42118

10.1016/j.jnoncrysol.2009.04.046

WOS:000270620900025

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Journal of Non-Crystalline Solids

Direitos

closedAccess

Palavras-Chave #Raman scattering #Chalcogenides #Photoinduced effects
Tipo

info:eu-repo/semantics/article